ZHCS311D May   2009  – January 2018 ADS1113 , ADS1114 , ADS1115

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化的方框图
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements: I2C
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Noise Performance
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1 Multiplexer
      2. 9.3.2 Analog Inputs
      3. 9.3.3 Full-Scale Range (FSR) and LSB Size
      4. 9.3.4 Voltage Reference
      5. 9.3.5 Oscillator
      6. 9.3.6 Output Data Rate and Conversion Time
      7. 9.3.7 Digital Comparator (ADS1114 and ADS1115 Only)
      8. 9.3.8 Conversion Ready Pin (ADS1114 and ADS1115 Only)
      9. 9.3.9 SMbus Alert Response
    4. 9.4 Device Functional Modes
      1. 9.4.1 Reset and Power-Up
      2. 9.4.2 Operating Modes
        1. 9.4.2.1 Single-Shot Mode
        2. 9.4.2.2 Continuous-Conversion Mode
      3. 9.4.3 Duty Cycling For Low Power
    5. 9.5 Programming
      1. 9.5.1 I2C Interface
        1. 9.5.1.1 I2C Address Selection
        2. 9.5.1.2 I2C General Call
        3. 9.5.1.3 I2C Speed Modes
      2. 9.5.2 Slave Mode Operations
        1. 9.5.2.1 Receive Mode
        2. 9.5.2.2 Transmit Mode
      3. 9.5.3 Writing To and Reading From the Registers
      4. 9.5.4 Data Format
    6. 9.6 Register Map
      1. 9.6.1 Address Pointer Register (address = N/A) [reset = N/A]
        1. Table 6. Address Pointer Register Field Descriptions
      2. 9.6.2 Conversion Register (P[1:0] = 0h) [reset = 0000h]
        1. Table 7. Conversion Register Field Descriptions
      3. 9.6.3 Config Register (P[1:0] = 1h) [reset = 8583h]
        1. Table 8. Config Register Field Descriptions
      4. 9.6.4 Lo_thresh (P[1:0] = 2h) [reset = 8000h] and Hi_thresh (P[1:0] = 3h) [reset = 7FFFh] Registers
        1. Table 9. Lo_thresh and Hi_thresh Register Field Descriptions
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Basic Connections
      2. 10.1.2 Single-Ended Inputs
      3. 10.1.3 Input Protection
      4. 10.1.4 Unused Inputs and Outputs
      5. 10.1.5 Analog Input Filtering
      6. 10.1.6 Connecting Multiple Devices
      7. 10.1.7 Quickstart Guide
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Shunt Resistor Considerations
        2. 10.2.2.2 Operational Amplifier Considerations
        3. 10.2.2.3 ADC Input Common-Mode Considerations
        4. 10.2.2.4 Resistor (R1, R2, R3, R4) Considerations
        5. 10.2.2.5 Noise and Input Impedance Considerations
        6. 10.2.2.6 First-order RC Filter Considerations
        7. 10.2.2.7 Circuit Implementation
        8. 10.2.2.8 Results Summary
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Power-Supply Sequencing
    2. 11.2 Power-Supply Decoupling
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 Documentation Support
      1. 13.1.1 相关文档
    2. 13.2 相关链接
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUEUNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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