The ADS855x requires four separate supplies: the analog supply for the ADC (AVDD), the buffer I/O supply for the digital interface (BVDD), and the high-voltage supplies driving the analog input circuitry (HVDD and HVSS). Generally, there are no specific requirements with regard to the power sequencing of the device. However, when HVDD is supplied before AVDD, the internal ESD structure conducts, increasing IHVDD beyond the specified value.

The AVDD supply provides power to the internal circuitry of the ADC. AVDD can be set in the range of 4.5 V to 5.5 V. Because the supply current of the device is typically 30 mA, a passive filter cannot be used between the digital board supply of the application and the AVDD pin. A linear regulator is recommended to generate the analog supply voltage. Decouple each AVDD pin to AGND with a 100-nF capacitor. In addition, place a single 10-μF capacitor close to the device but without compromising the placement of the smaller capacitor. Optionally, each supply pin can be decoupled using a 1-μF ceramic capacitor without the requirement for a 10-μF capacitor.

The BVDD supply is only used to drive the digital I/O buffers and can be set in the range of 2.7 V to 5.5 V. This range allows the device to interface with most state-of-the-art processors and controllers. To limit the noise energy from the external digital circuitry to the device, filter BVDD. A 10-Ω resistor can be placed between the external digital circuitry and the device because the current drawn is typically below 2 mA (depending on the external loads). Place a bypass ceramic capacitor of 1-μF (or alternatively, a pair of 100-nF and 10-μF capacitors) between the BVDD pin and pin 8.

The high-voltage supplies (HVSS and HVDD) are connected to the analog inputs. Noise and glitches on these supplies directly couple into the input signals. Place a 100-nF ceramic decoupling capacitor, located as close to the device as possible, between each of pins 30, 31, and AGND. An additional 10-μF capacitor is used that must be placed close to the device but without compromising the placement of the smaller capacitor.