SBASAC2 june   2023 AFE43902-Q1 , AFE53902-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Voltage Output
    6. 6.6  Electrical Characteristics: ADC Input
    7. 6.7  Electrical Characteristics: General
    8. 6.8  Timing Requirements: I2C Standard Mode
    9. 6.9  Timing Requirements: I2C Fast Mode
    10. 6.10 Timing Requirements: I2C Fast Mode Plus
    11. 6.11 Timing Requirements: SPI Write Operation
    12. 6.12 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 0)
    13. 6.13 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 1)
    14. 6.14 Timing Requirements: PWM Output
    15. 6.15 Timing Diagrams
    16. 6.16 Typical Characteristics: Voltage Output
    17. 6.17 Typical Characteristics: ADC
    18. 6.18 Typical Characteristics: General
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Smart Analog Front End (AFE) Architecture
      2. 7.3.2 Programming Interface
      3. 7.3.3 Nonvolatile Memory (NVM)
        1. 7.3.3.1 NVM Cyclic Redundancy Check (CRC)
          1. 7.3.3.1.1 NVM-CRC-FAIL-USER Bit
          2. 7.3.3.1.2 NVM-CRC-FAIL-INT Bit
      4. 7.3.4 Power-On Reset (POR)
      5. 7.3.5 External Reset
      6. 7.3.6 Register-Map Lock
    4. 7.4 Device Functional Modes
      1. 7.4.1 Digital-to-Analog Converter (DAC) Mode
        1. 7.4.1.1 Voltage Reference and DAC Transfer Function
          1. 7.4.1.1.1 Power-Supply as Reference
          2. 7.4.1.1.2 Internal Reference
          3. 7.4.1.1.3 External Reference
      2. 7.4.2 Pulse-Width Modulation (PWM) Mode
      3. 7.4.3 Analog-to-Digital Converter (ADC) Mode
      4. 7.4.4 Multislope Thermal Foldback Mode
        1. 7.4.4.1 Thermistor Linearization
    5. 7.5 Programming
      1. 7.5.1 SPI Programming Mode
      2. 7.5.2 I2C Programming Mode
        1. 7.5.2.1 F/S Mode Protocol
        2. 7.5.2.2 I2C Update Sequence
          1. 7.5.2.2.1 Address Byte
          2. 7.5.2.2.2 Command Byte
        3. 7.5.2.3 I2C Read Sequence
    6. 7.6 Register Maps
      1. 7.6.1  NOP Register (address = 00h) [reset = 0000h]
      2. 7.6.2  DAC-x-VOUT-CMP-CONFIG Register (address = 15h, 03h) [reset = 0400h]
      3. 7.6.3  COMMON-CONFIG Register (address = 1Fh) [reset = 03F9h]
      4. 7.6.4  COMMON-TRIGGER Register (address = 20h) [reset = 0000h]
      5. 7.6.5  COMMON-PWM-TRIG Register (address = 21h) [reset = 0001h]
      6. 7.6.6  GENERAL-STATUS Register (address = 22h) [reset = 2068h]
      7. 7.6.7  DEVICE-MODE-CONFIG Register (address = 25h) [reset = 8040h]
      8. 7.6.8  INTERFACE-CONFIG Register (address = 26h) [reset = 0000h]
      9. 7.6.9  STATE-MACHINE-CONFIG0 Register (address = 27h) [reset = 0003h]
      10. 7.6.10 SRAM-CONFIG Register (address = 2Bh) [reset = 0000h]
      11. 7.6.11 SRAM-DATA Register (address = 2Ch) [reset = 0000h]
      12. 7.6.12 Xx-TEMPERATURE Register (SRAM address = 20h, 22h, 24h) [reset = 0000h]
      13. 7.6.13 Yx-TEMPERATURE Register (SRAM address = 21h, 23h, 25h) [reset = 0000h]
      14. 7.6.14 Xx-OUTPUT Register (SRAM address = 26h, 28h, 2Ah, 2Ch) [reset = 0000h]
      15. 7.6.15 Yx-OUTPUT Register (SRAM address = 27h, 29h, 2Bh, 2Dh) [reset = 0000h]
      16. 7.6.16 PWM-FREQUENCY Register (SRAM address = 2Eh) [reset = 0000h]
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Multislope Thermal Foldback Using the AFE53902-Q1 and Voltage Output
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Performance Plots
      2. 8.2.2 Multislope Thermal Foldback Using the AFE43902-Q1 and PWM Output
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Performance Plots
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

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6.7 Electrical Characteristics: General

minimum and maximum specifications at –40°C ≤  TA ≤ +125°C and typical specifications at TA = 25°C, 1.7 V ≤ VDD ≤ 5.5 V, DAC reference tied to VDD, gain = 1 ×, and digital inputs at VDD or AGND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL REFERENCE
Initial accuracy TA = 25°C for all measurements 1.1979 1.212 1.224 V
Reference output temperature coefficient(1) (2) 60 ppm/°C 
EXTERNAL REFERENCE
External reference input range 1.7 VDD V
VREF input impedance(1) (3) 192 kΩ-ch
EEPROM
Endurance(1) –40°C ≤ TA ≤ +85°C  20000 Cycles
TA = 125°C  1000
Data retention(1) 50 Years
EEPROM programming write cycle time(1) 200 ms
Device boot-up time(1) Time taken from power valid (VDD ≥ 1.7 V) to output valid state (output state as programmed in EEPROM), 0.5-µF capacitor on the CAP pin 5 ms
DIGITAL INPUTS
Digital feedthrough Voltage output mode, DAC output static at midscale, fast mode plus, SCL toggling 20 nV-s
Pin capacitance Per pin 10 pF
POWER
IDD Current flowing into VDD DAC in sleep mode, internal reference powered down, external reference at 5.5 V 28 µA
Current flowing into VDD(1) DAC in sleep mode, internal reference enabled, additional current through internal reference 10
DAC and ADC channels enabled, internal reference enabled, additional current through internal reference per DAC or ADC channel 12.5 µA-ch
Normal operation, state-machine enabled 1.05 mA
HIGH-IMPEDANCE OUTPUT
ILEAK Current flowing into VOUTX and VFBX DAC in Hi-Z output mode, 1.7 V ≤ VDD ≤ 5.5 V 10 nA
VDD = 0 V, VOUT ≤ 1.5 V, decoupling capacitor between VDD and AGND = 0.1 μF 200
VDD = 0 V, 1.5 V < VOUT ≤ 5.5 V, decoupling capacitor between VDD and AGND = 0.1 μF 500
100 kΩ between VDD and AGND, VOUT ≤ 1.25 V, series resistance of 10 kΩ at OUT pin ±2 µA
(1) Specified by design and characterization, not production tested.
(2) Measured at –40°C and +125°C and calculated the slope.
(3) Impedances for the DAC channels are connected in parallel.
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