ZHCSMT3A november   2020  – march 2023 ALM2403-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overtemperature and Shutdown Pin (OTF/SH_DN)
      2. 7.3.2 Thermal Shutdown
      3. 7.3.3 Current-Limit and Short-Circuit Protection
      4. 7.3.4 Input Common-Mode Range
      5. 7.3.5 Reverse Body Diodes in Output-Stage Transistors
      6. 7.3.6 EMI Filtering
    4. 7.4 Device Functional Modes
      1. 7.4.1 Open-Loop and Closed-Loop Operation
      2. 7.4.2 Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitive Load and Stability
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Resolver Excitation Amplifier Combined With MFB 2nd-Order, Low-Pass Filter
          1. 8.2.2.1.1 Filter Design
          2. 8.2.2.1.2 Short-to-Battery Protection
        2. 8.2.2.2 Power Dissipation and Thermal Reliability
          1. 8.2.2.2.1 Improving Package Thermal Performance
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Design Procedure

When using the ALM2403-Q1 in a resolver application, determine:

  • Resolver excitation input impedance or resistance and inductance: ZO = 100 + j188, R = 100 Ω, and L = 3 mH at 10 kHz
  • Resolver transformation ratio (VSINCOS / VEXC): 0.5 V/V at 10 kHz
  • Package and RθJA: HTSSOP, 46.9°C/W
  • Op amp maximum junction temperature: 150°C
  • Op amp bandwidth: 21 MHz
  • Op amp slew rate: 50 V/µS