ZHCSMT3A november   2020  – march 2023 ALM2403-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overtemperature and Shutdown Pin (OTF/SH_DN)
      2. 7.3.2 Thermal Shutdown
      3. 7.3.3 Current-Limit and Short-Circuit Protection
      4. 7.3.4 Input Common-Mode Range
      5. 7.3.5 Reverse Body Diodes in Output-Stage Transistors
      6. 7.3.6 EMI Filtering
    4. 7.4 Device Functional Modes
      1. 7.4.1 Open-Loop and Closed-Loop Operation
      2. 7.4.2 Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitive Load and Stability
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Resolver Excitation Amplifier Combined With MFB 2nd-Order, Low-Pass Filter
          1. 8.2.2.1.1 Filter Design
          2. 8.2.2.1.2 Short-to-Battery Protection
        2. 8.2.2.2 Power Dissipation and Thermal Reliability
          1. 8.2.2.2.1 Improving Package Thermal Performance
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

at TA = 25°C, VS = V+ = 24 V, V– = GND, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage ±6 ±25 mV
dVOS/dT Input offset voltage drift TA = –40°C to +125°C ±15 ±50 μV/°C
PSRR Power-supply rejection ratio VS = 5 V to 24 V  ±10 ±47 μV/V
VS = 5 V to 24 V, TA = –40°C to +125°C ±50
Channel separation f = 10 kHz 120 dB
INPUT BIAS CURRENT
IB Input bias current 10 ±100 pA
TA = –40°C to +125°C ±100 nA
IOS Input offset current 10 ±200 pA
TA = –40°C to +125°C ±100 nA
NOISE
  Input voltage noise f = 0.1 Hz to 10 Hz   8 µVRMS
eN Input voltage noise density f = 1 kHz   150   nV/√Hz
f = 100 kHz   22  
iN Input current noise f = 1 kHz   48   fA/√Hz
INPUT VOLTAGE
VCM Common-mode voltage (V–) – 0.2 (V+) + 0.2 V
CMRR Common-mode rejection ratio (V–) – 0.5 V < VCM < (V+) + 0.5 V, 10 V ≤ VS < 24 V 49 72 dB
(V–) – 0.2 V < VCM < (V+) + 0.2 V,
TA = –40°C to +125°C, 10 V < VS < 24 V		 52
(V–) + 2.5 V < VCM < (V+) – 2.5 V,
10 V < VS < 24 V		 80 94
(V–) + 2.5 V < VCM < (V+) – 2.5 V,
TA = –40°C to +125°C, 10 V < VS < 24 V		 75
(V–) – 0.5 V < VCM < (V+) + 0.5 V, 5 V < VS < 24 V 44 59
INPUT CAPACITANCE
ZID Differential 1 || 2 GΩ || pF
ZICM Common-mode 1 || 2
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 0.5 V < VO < (V+) – 0.5 V, 
VS = 24 V		 103 111 dB
TA = –40°C to +125°C 96
(V–) + 1.5 V < VO < (V+) – 1.5 V, 
RL = 225 Ω, VS = 24 V		 96 104
TA = –40°C to +125°C 94
FREQUENCY RESPONSE
GBW Gain-bandwidth product VS = 24 V 21 MHz
SR Slew rate 10-V step, gain = +1 50 V/μs
tS Settling time To 0.1%, 10-V step , gain = +1, CL = 10 pF 0.31 μs
To 0.1%, 10-V step , gain = –1, CL = 10 pF 0.40
Overload recovery time VIN  × gain > VS 0.28 μs
THD+N Total harmonic distortion + noise VS = 15 V, VO = 10 Vpp, gain = –1,
f = 10 kHz, RL = 100 Ω 		 74 dB
OUTPUT
Voltage output swing from rail IOUT =  ±5 mA 35 60 mV
ISC Short-circuit current Sinking 400 mA
Sourcing 500
ENABLE
VIH_OTF Enable high input voltage 1.2 V
VIL_OTF Enable low input voltage 0.5 V
Enable hysteresis 220 mV
tOTF/SH_DN Enable start-up time 5 μs
POWER SUPPLY
IQ Total quiescent current  IO = 0 A 3.6 5.5 mA
IO = 0 A, TA = –40°C to +125°C 6
ISD Shutdown current VOTF/SH_DN = 0 V 260 μA
TEMPERATURE
Thermal shutdown  172 °C
Thermal shutdown recovery 150 °C
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