SPRS658F February 2010 – March 2014 AM1806
PRODUCTION DATA.
请参考 PDF 数据表获取器件具体的封装图。
Supply voltage ranges | Core Logic, Variable and Fixed (CVDD, RVDD, RTC_CVDD, PLL0_VDDA , PLL1_VDDA , USB_CVDD ) (2) |
-0.5 V to 1.4 V |
I/O, 1.8V (USB0_VDDA18, DDR_DVDD18) (2) |
-0.5 V to 2 V | |
I/O, 3.3V (DVDD3318_A, DVDD3318_B, DVDD3318_C, USB0_VDDA33) (2) |
-0.5 V to 3.8V | |
Input voltage (VI) ranges | Oscillator inputs (OSCIN, RTC_XI), 1.2V | -0.3 V to CVDD + 0.3V |
Dual-voltage LVCMOS inputs, 3.3V or 1.8V (Steady State) | -0.3V to DVDD + 0.3V | |
Dual-voltage LVCMOS inputs, operated as 3.3V (Transient Overshoot/Undershoot) |
DVDD + 20% up to 20% of Signal Period |
|
Dual-voltage LVCMOS inputs, operated as 1.8V (Transient Overshoot/Undershoot) |
DVDD + 30% up to 30% of Signal Period |
|
USB 5V Tolerant IOs: (USB0_DM, USB0_DP, USB0_ID) |
5.25V(3) | |
USB0 VBUS Pin | 5.50V(3) | |
Output voltage (VO) ranges | Dual-voltage LVCMOS outputs, 3.3V or 1.8V (Steady State) |
-0.3 V to DVDD + 0.3V |
Dual-voltage LVCMOS outputs, operated as 3.3V (Transient Overshoot/Undershoot) |
DVDD + 20% up to 20% of Signal Period |
|
Dual-voltage LVCMOS outputs, operated as 1.8V (Transient Overshoot/Undershoot) |
DVDD + 30% up to 30% of Signal Period |
|
Clamp Current | Input or Output Voltages 0.3V above or below their respective power rails. Limit clamp current that flows through the I/O's internal diode protection cells. | ±20mA |
Operating Junction Temperature ranges, TJ | Commercial (default) | 0°C to 90°C |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Storage temperature range, Tstg | (default) | -55 | 150 | °C |
ESD Stress Voltage, VESD(1) | Human Body Model (HBM) (2) | >1 | >1 | kV |
Charged Device Model (CDM) (3) | >500 | >500 | V |
NAME | DESCRIPTION | CONDITION | MIN | NOM | MAX | UNIT | |
---|---|---|---|---|---|---|---|
Supply Voltage |
CVDD | Core Logic Supply Voltage (variable) | 1.3V operating point | 1.25 | 1.3 | 1.35 | V |
1.2V operating point | 1.14 | 1.2 | 1.32 | V | |||
1.1V operating point | 1.05 | 1.1 | 1.16 | V | |||
1.0V operating point | 0.95 | 1.0 | 1.05 | V | |||
RVDD | Internal RAM Supply Voltage | 456 MHz versions | 1.25 | 1.3 | 1.35 | V | |
375 MHz versions | 1.14 | 1.2 | 1.32 | ||||
RTC_CVDD (4) | RTC Core Logic Supply Voltage | 0.9 | 1.2 | 1.32 | V | ||
PLL0_VDDA | PLL0 Supply Voltage | 1.14 | 1.2 | 1.32 | V | ||
PLL1_VDDA | PLL1 Supply Voltage | 1.14 | 1.2 | 1.32 | V | ||
USB_CVDD | USB0 Core Logic Supply Voltage | 1.14 | 1.2 | 1.32 | V | ||
USB0_VDDA18 | USB0 PHY Supply Voltage | 1.71 | 1.8 | 1.89 | V | ||
USB0_VDDA33 | USB0 PHY Supply Voltage | 3.15 | 3.3 | 3.45 | V | ||
DVDD18(5) | 1.8V Logic Supply | 1.71 | 1.8 | 1.89 | V | ||
DDR_DVDD18 (5) | DDR2 PHY Supply Voltage | 1.71 | 1.8 | 1.89 | V | ||
DDR_VREF | DDR2/mDDR reference voltage | 0.49* DDR_DVDD18 |
0.5* DDR_DVDD18 |
0.51* DDR_DVDD18 |
V | ||
DDR_ZP | DDR2/mDDR impedance control, connected via 50Ω resistor to Vss |
Vss | V | ||||
DVDD3318_A | Power Group A Dual-voltage IO Supply Voltage | 1.8V operating point | 1.71 | 1.8 | 1.89 | V | |
3.3V operating point | 3.15 | 3.3 | 3.45 | V | |||
DVDD3318_B | Power Group B Dual-voltage IO Supply Voltage | 1.8V operating point | 1.71 | 1.8 | 1.89 | V | |
3.3V operating point | 3.15 | 3.3 | 3.45 | V | |||
DVDD3318_C | Power Group C Dual-voltage IO Supply Voltage | 1.8V operating point | 1.71 | 1.8 | 1.89 | V | |
3.3V operating point | 3.15 | 3.3 | 3.45 | V | |||
Supply Ground |
VSS | Core Logic Digital Ground | V | ||||
PLL0_VSSA | PLL0 Ground | V | |||||
PLL1_VSSA | PLL1 Ground | V | |||||
OSCVSS(1) | Oscillator Ground | 0 | 0 | 0 | V | ||
RTC_VSS(1) | RTC Oscillator Ground | V | |||||
USB0_VSSA | USB0 PHY Ground | V | |||||
USB0_VSSA33 | USB0 PHY Ground | V | |||||
Voltage Input High |
VIH | High-level input voltage, Dual-voltage I/O, 3.3V(2) | 2 | V | |||
High-level input voltage, Dual-voltage I/O, 1.8V (2) | 0.65*DVDD | V | |||||
High-level input voltage, RTC_XI | 0.8*RTC_CVDD | V | |||||
High-level input voltage, OSCIN | 0.8*CVDD | V | |||||
Voltage Input Low |
VIL | Low-level input voltage, Dual-voltage I/O, 3.3V(2) | 0.8 | V | |||
Low-level input voltage, Dual-voltage I/O, 1.8V (2) | 0.35*DVDD | V | |||||
Low-level input voltage, RTC_XI | 0.2*RTC_CVDD | V | |||||
Low-level input voltage, OSCIN | 0.2*CVDD | V | |||||
USB | USB0_VBUS | USB external charge pump input | 0 | 5.25 | V | ||
Transition Time | tt | Transition time, 10%-90%, All Inputs (unless otherwise specified in the electrical data sections) | 0.25P or 10 (3) | ns | |||
Operating Frequency |
FPLL0_SYSCLK6 | Commercial temperature grade (default) | CVDD = 1.3V operating point | 0 | 456 | MHz | |
CVDD = 1.2V operating point | 0 | 375 | |||||
CVDD = 1.1V operating point | 0 | 200 | |||||
CVDD = 1.0V operating point | 0 | 100 | |||||
Extended temperature grade (A suffix) | CVDD = 1.3V operating point | 0 | 456 | MHz | |||
CVDD = 1.2V operating point | 0 | 375 | |||||
CVDD = 1.1V operating point | 0 | 200 | |||||
CVDD = 1.0V operating point | 0 | 100 |
The information in the section below is provided solely for your convenience and does not extend or modify the warranty provided under TI’s standard terms and conditions for TI semiconductor products.
To avoid significant degradation, the device power-on hours (POH) must be limited to the following:
Silicon Revision | Speed Grade | Operating Junction Temperature (Tj) | Nominal CVDD Voltage (V) | Power-On Hours [POH] (hours) |
---|---|---|---|---|
B/E | 300 MHz | 0 to 90 °C | 1.2V | 100,000 |
B/E | 375 MHz | 0 to 90 °C | 1.2V | 100,000 |
B/E | 375 MHz | -40 to 105 °C | 1.2V | 75,000(1) |
B/E | 456 MHz | 0 to 90 °C | 1.3V | 100,000 |
B/E | 456 MHz | -40 to 90 °C | 1.3V | 100,000 |
Note: Logic functions and parameter values are not assured out of the range specified in the recommended operating conditions.
The above notations cannot be deemed a warranty or deemed to extend or modify the warranty under TI’s standard terms and conditions for TI semiconductor products.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | High-level output voltage (dual-voltage LVCMOS IOs at 3.3V)(3) |
DVDD= 3.15V, IOH = -4 mA | 2.4 | V | ||
DVDD= 3.15V, IOH = -100 μA | 2.95 | V | ||||
High-level output voltage (dual-voltage LVCMOS IOs at 1.8V)(3) |
DVDD= 1.71V, IOH = -2 mA | DVDD-0.45 | V | |||
VOL | Low-level output voltage (dual-voltage LVCMOS I/Os at 3.3V) |
DVDD= 3.15V, IOL = 4mA | 0.4 | V | ||
DVDD= 3.15V, IOL = 100 μA | 0.2 | V | ||||
Low-level output voltage (dual-voltage LVCMOS I/Os at 1.8V) |
DVDD= 1.71V, IOL = 2mA | 0.45 | V | |||
II(2) | Input current(3) (dual-voltage LVCMOS I/Os) |
VI = VSS to DVDD without opposing internal resistor | ±9 | μA | ||
VI = VSS to DVDD with opposing internal pullup resistor (1) | 70 | 310 | μA | |||
VI = VSS to DVDD with opposing internal pulldown resistor (1) | -75 | -270 | μA | |||
Input current (DDR2/mDDR I/Os) | VI = VSS to DVDD with opposing internal pulldown resistor (1) | -77 | -286 | μA | ||
IOH | High-level output current(3) (dual-voltage LVCMOS I/Os) |
-6 | mA | |||
IOL | Low-level output current(3) (dual-voltage LVCMOS I/Os) |
6 | mA | |||
Capacitance | Input capacitance (dual-voltage LVCMOS) | 3 | pF | |||
Output capacitance (dual-voltage LVCMOS) | 3 | pF |