ZHCSDC3D June 2014 – September 2016 AM4372 , AM4376 , AM4377 , AM4378 , AM4379
PRODUCTION DATA.
High-speed (HS) bypass capacitors are critical for proper DDR3 interface operation. It is particularly important to minimize the parasitic series inductance of the HS bypass capacitors, device DDR3 power, and device DDR3 ground connections. Table 5-56 contains the specification for the HS bypass capacitors as well as for the power connections on the PCB. Generally speaking, it is good to:
NO. | PARAMETER | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
1 | HS bypass capacitor package size(1) | 0201 | 0402 | 10 mils | |
2 | Distance, HS bypass capacitor to VDDS_DDR and VSS terminal being bypassed(2)(3)(4) | 400 | mils | ||
3 | VDDS_DDR HS bypass capacitor count | 20 | Devices | ||
4 | VDDS_DDR HS bypass capacitor total capacitance | 1 | μF | ||
5 | Trace length from VDDS_DDR and VSS terminal to connection via(2) | 35 | 70 | mils | |
6 | Distance, HS bypass capacitor to DDR3 device being bypassed(5) | 150 | mils | ||
7 | DDR3 device HS bypass capacitor count(6) | 12 | Devices | ||
8 | DDR3 device HS bypass capacitor total capacitance(6) | 0.85 | μF | ||
9 | Number of connection vias for each HS bypass capacitor(7)(8) | 2 | Vias | ||
10 | Trace length from bypass capacitor connect to connection via(2)(8) | 35 | 100 | mils | |
11 | Number of connection vias for each DDR3 device power and ground terminal(9) | 1 | Vias | ||
12 | Trace length from DDR3 device power and ground terminal to connection via(2)(7) | 35 | 60 | mils |