ZHCSTV3 August 2024 AMC3306M05-Q1
PRODUCTION DATA
参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | |
---|---|---|---|---|---|---|
模拟输入 | ||||||
RIN | 单端输入电阻 | INN = HGND | 4.75 | kΩ | ||
RIND | 差分输入电阻 | 4.9 | kΩ | |||
IIB | 输入偏置电流 | INP = INN = HGND; IIB = (IIBP + IIBN) / 2 |
-48 | -36 | -28 | μA |
IIO | 输入失调电流(1) | IIO = IIBP – IIBN;INP = INN = HGND | ±10 | nA | ||
CIN | 单端输入电容 | INN = HGND,fIN = 310kHz | 4 | pF | ||
CIND | 差分输入电容 | fIN = 310kHz | 2 | pF | ||
精度 | ||||||
EO | 失调电压误差(1) | INN = INP = HGND,TA = 25°C | -50 | ±10 | 50 | µV |
TCEO | 失调电压误差热漂移(4) | INN = INP = HGND | -0.4 | 0.4 | µV/°C | |
EG | 增益误差 | TA = 25°C | -0.2% | ±0.005% | 0.2% | |
TCEG | 增益误差漂移(5) | -35 | 35 | ppm/°C | ||
DNL | 微分非线性 | 分辨率:16 位 | -0.99 | 0.99 | LSB | |
INL | 积分非线性 | 分辨率:16 位 | -4 | ±1 | 4 | LSB |
SNR | 信噪比 | fIN = 1kHz | 77 | 81 | dB | |
SINAD | 信纳比 | fIN = 1kHz | 77 | 81 | dB | |
THD | 总谐波失真(3) | 5MHz ≤ fCLKIN ≤ 21MHz,fIN = 1kHz | -93 | -86 | dB | |
SFDR | 无杂散动态范围 | fIN = 1kHz | 87 | 94 | dB | |
CMRR | 共模抑制比 | fIN = 0Hz,VCM min ≤ VIN ≤ VCM max | -100 | dB | ||
fIN = 10kHz,VCM min ≤ VIN ≤ VCM max,VINP = VINN = 100mVPP | -100 | |||||
PSRR | 电源抑制比 | VDD 从 3.0V 到 5.5V,直流 | -120 | dB | ||
INP = INN = HGND,VDD 为 3.0V 至 5.5V,10kHz,100mV 纹波 | -120 | |||||
数字 I/O | ||||||
IIN | 输入漏电流 | GND ≤ VIN ≤ VDD | 0 | 7 | μA | |
CIN | 输入电容 | 4 | pF | |||
VIH | 高电平输入电压 | 0.7 × VDD | VDD + 0.3 | V | ||
VIL | 低电平输入电压 | -0.3 | 0.3 × VDD | V | ||
CLOAD | 输出负载电容 | 15 | 30 | pF | ||
VOH | 高电平输出电压 | IOH = -20µA | VDD – 0.1 | V | ||
IOH = -4mA | VDD – 0.4 | |||||
VOL | 低电平输出电压 | IOL = 20µA | 0.1 | V | ||
IOL = 4mA | 0.4 | |||||
CMTI | 共模瞬态抗扰度 | 75 | 135 | kV/μs | ||
电源 | ||||||
IDD | 低侧电源电流 | HLDO 上无外部负载 | 26 | 40 | mA | |
HLDO 上 1mA 无外部负载 | 28 | 42 | ||||
VDCDC_OUT | 直流/直流输出电压 | DCDC_OUT 至 HGND | 3.1 | 3.5 | 4.65 | V |
VDCDCUV | 直流/直流输出欠压检测阈值电压 | VDCDC_OUT 下降 | 2.1 | 2.25 | V | |
VHLDO_OUT | 高侧 LDO 输出电压 | HLDO_OUT 至 HGND,高达 1mA 的外部负载(2) | 3 | 3.2 | 3.4 | V |
VHLDOUV | 高侧 LDO 输出欠压检测阈值电压 | VHLDO_OUT 下降 | 2.4 | 2.6 | V | |
IH | 辅助电路的高侧电源电流 | 负载从 HLDO_OUT 连接到 HGND;非开关;-40℃ ≤ TA ≤ 85℃(2) | 1 | mA | ||
tSTART | 器件启动时间 | VDD 步进至 3.0V 使位流有效 | 0.9 | 1.4 | ms |