ZHCSL85B May   2020  – April 2021 AMC3306M25

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Timing Diagrams
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Modulator
      3. 7.3.3 Isolation Channel Signal Transmission
      4. 7.3.4 Digital Output
        1. 7.3.4.1 Output Behavior in Case of a Full-Scale Input
        2. 7.3.4.2 Output Behavior in Case of a High-Side Supply Failure
      5. 7.3.5 Isolated DC/DC Converter
      6. 7.3.6 Diagnostic Output
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Digital Filter Usage
    2. 8.2 Typical Application
      1. 8.2.1 Solar Inverter Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Shunt Resistor Sizing
          2. 8.2.1.2.2 Input Filter Design
          3. 8.2.1.2.3 Bitstream Filtering
        3. 8.2.1.3 Application Curve
      2. 8.2.2 What To Do and What Not To Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
        1. 11.1.1.1 Isolation Glossary
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6.9 Electrical Characteristics

all minimum and maximum specifications are at TA = –40°C to +125°C, VDD = 3.0 V to 5.5 V, INP = –250 mV to +250 mV, INN = 0 V, and sinc3 filter with OSR = 256 (unless otherwise noted); typical values are at TA = 25°C, CLKIN = 20 MHz, VDD = 3.3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
RIN Single-ended input resistance INN = HGND 19 kΩ
RIND Differential input resistance 22 kΩ
IIB Input bias current INP = INN = HGND;
IIB = (IIBP + IIBN) / 2		 –41 –30 –24 μA
IIO Input offset current(1) IIO = IIBP – IIBN; INP = INN = HGND ±10 nA
CIN Single-ended input capacitance INN = HGND, fIN = 310 kHz 2 pF
CIND Differential input capacitance fIN = 310 kHz 1 pF
ACCURACY
EO Offset error(1) INN = INP = HGND, TA = 25°C –50 ±10 50 µV
TCEO Offset error thermal drift(4) INN = INP = HGND –1 1 µV/°C
EG Gain error TA = 25°C –0.2% ±0.005% 0.2% %
TCEG Gain error drift(5) –35 35 ppm/°C
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
INL Integral nonlinearity Resolution: 16 bits –4 ±1 4 LSB
SNR Signal-to-noise ratio fIN = 1 kHz 81 83 dB
SINAD Signal-to-noise + distortion fIN = 1 kHz 79 82.5 dB
THD Total harmonic distortion(3) 5 MHz ≤ fCLKIN ≤ 21 MHz, fIN = 1 kHz –96 –88 dB
SFDR Spurious-free dynamic range fIN = 1 kHz 88 97 dB
CMRR Common-mode rejection ratio fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max –95 dB
fIN = 10 kHz, VCM min ≤ VIN ≤ VCM max, VINP = VINN = 500 mVPP –84
PSRR Power-supply rejection ratio VDD from 3.0 V to 5.5 V, at DC –120 dB
INP = INN = HGND, VDD from 3.0 V to 5.5 V, 10 kHz, 100 mV ripple –120
DIGITAL I/O
IIN Input leakage current GND ≤ VIN ≤ VDD 0 7 μA
CIN Input capacitance 4 pF
VIH High-level input voltage 0.7 × VDD VDD + 0.3 V
VIL Low-level input voltage –0.3 0.3 × VDD V
CLOAD Output load capacitance 15 30 pF
VOH High-level output voltage IOH = –20 µA VDD – 0.1 V
IOH = –4 mA VDD – 0.4
VOL Low-level output voltage IOL = 20 µA 0.1 V
IOL = 4 mA 0.4
CMTI Common-mode transient immunity 75 135 kV/μs
POWER SUPPLY
IDD Low-side supply current no external load on HLDO 26 40 mA
1 mA external load on HLDO 28 42
VDCDC_OUT DC/DC output voltage DCDC_OUT to HGND 3.1 3.5 4.65 V
VDCDCUV DC/DC output undervoltage detection threshold voltage VDCDC_OUT falling 2.1 2.25 V
VHLDO_OUT High-side LDO output voltage HLDO_OUT to HGND, up to 1 mA external load(2) 3 3.2 3.4 V
VHLDOUV High-side LDO output undervoltage detection threshold voltage VHLDO_OUT falling 2.4 2.6 V
IH High-side supply current for auxiliary circuitry Load connected from HLDO_OUT to HGND; non-switching;
–40℃ ≤ TA ≤ 85℃(2) 		1 mA
tSTART Device startup time VDD step to 3.0 V to bitstream valid 0.9 1.4 ms
(1) The typical value includes one sigma statistical variation at nominal operating conditions.
(2) High-side LDO supports full external load (IH) only up to TA = 85℃. See the Isolated DC/DC Converter section for more details.
(3) THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.
(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCEO = (ValueMAX - ValueMIN) / TempRange
(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = (ValueMAX - ValueMIN) / (Value(T=25℃) x TempRange) x 106
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