ZHCSHP8B December 2017 – January 2019 AMIC120
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VDD_MPU | Supply voltage for the MPU domain | –0.5 | 1.5 | V | |
VDD_CORE | Supply voltage range for the CORE domain | –0.5 | 1.5 | V | |
CAP_VDD_RTC(3) | Supply voltage range for the RTC domain | –0.5 | 1.5 | V | |
VDDS_RTC | Supply voltage range for the RTC domain | –0.5 | 2.1 | V | |
VDDS_OSC | Supply voltage range for the System oscillator | –0.5 | 2.1 | V | |
VDDS_SRAM_CORE_BG | Supply voltage range for the Core SRAM and Bandgap LDOs | –0.5 | 2.1 | V | |
VDDS_SRAM_MPU_BB | Supply voltage range for the MPU SRAM and BB LDOs | –0.5 | 2.1 | V | |
VDDS_PLL_DDR | Supply voltage range for the DPLL DDR | –0.5 | 2.1 | V | |
VDDS_PLL_CORE_LCD | Supply voltage range for the DPLL CORE, EXTDEV, and LCD | –0.5 | 2.1 | V | |
VDDS_PLL_MPU | Supply voltage range for the DPLL MPU | –0.5 | 2.1 | V | |
VDDS_DDR | Supply voltage range for the DDR IO domain | –0.5 | 2.1 | V | |
VDDS | Supply voltage range for all dual-voltage IO domains | –0.5 | 2.1 | V | |
VDDA1P8V_USB0 | Supply voltage range for USBPHY and DPLL PER | –0.5 | 2.1 | V | |
VDDA1P8V_USB1 | Supply voltage range for USBPHY | –0.5 | 2.1 | V | |
VDDA_ADC0 | Supply voltage range for ADC0 | –0.5 | 2.1 | V | |
VDDA_ADC1 | Supply voltage range for ADC1 | –0.5 | 2.1 | V | |
VDDSHV1 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV2 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV3 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV5 | Supply voltage range for the CLKOUT voltage domain | –0.5 | 3.8 | V | |
VDDSHV6 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV7 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV8 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV9 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV10 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDSHV11 | Supply voltage range for the dual-voltage IO domain | –0.5 | 3.8 | V | |
VDDA3P3V_USB0 | Supply voltage range for USBPHY | –0.5 | 4 | V | |
VDDA3P3V_USB1 | Supply voltage range for USBPHY | –0.5 | 4 | V | |
VDDS3P3V_IOLDO | Supply voltage range for the dual-voltage IO LDO | –0.5 | 3.8 | V | |
VDDS_CLKOUT | Supply voltage range for CLKOUT domain | –0.5 | 2.1 | V | |
USB0_VBUS(4) | Supply voltage range for USB VBUS comparator input | –0.5 | 5.25 | V | |
USB1_VBUS(4) | Supply voltage range for USB VBUS comparator input | –0.5 | 5.25 | V | |
DDR_VREF | Supply voltage range for the DDR3/DDR3L HSTL, LPDDR2 HSUL_12 reference voltage | –0.3 | 1.1 | V | |
Steady State Max. Voltage at all IO pins(5) | –0.5 V to IO supply voltage + 0.3 V | ||||
USB0_ID(6) | Steady state maximum voltage range for the USB ID input | –0.5 | 2.1 | V | |
USB1_ID(6) | Steady state maximum voltage range for the USB ID input | –0.5 | 2.1 | V | |
Transient Overshoot and Undershoot specification at IO terminal | 20% of corresponding IO supply voltage for up to 20% of signal period (see Figure 5-1) | ||||
Latch-up Performance(7) | Class II (105°C) | Latch-up I-test performance current-pulse injection on each IO pin | ±100 | mA | |
Latch-up overvoltage performance voltage injection on each IO pin | ±100 | ||||
Tstg(9) | Storage temperature | –55 | 155 | °C |
For overvoltage performance:
Supplies stressed per JEDEC JESD78D (Class II) and passed specified voltage injection.
Fail-safe IO terminals are designed such they do not have dependencies on the respective IO power supply voltage. This allows external voltage sources to be connected to these IO terminals when the respective IO power supplies are turned off. The USB0_VBUS, USB1_VBUS, and DDR_RESETn are the only fail-safe IO terminals. All other IO terminals are not fail-safe and the voltage applied to them should be limited to the value defined by the Steady State Max. Voltage at all IO pins parameter in Section 5.1.