ZHCS384H November   2011  – July 2022 BQ24160 , BQ24160A , BQ24161 , BQ24161B , BQ24163 , BQ24168

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Mode Operation
        1. 8.3.1.1 Charge Profile
        2. 8.3.1.2 PWM Controller in Charge Mode
      2. 8.3.2  Battery Charging Process
      3. 8.3.3  Battery Detection
      4. 8.3.4  Dynamic Power Path Management (DPPM)
      5. 8.3.5  Input Source Connected
      6. 8.3.6  Battery Only Connected
      7. 8.3.7  Battery Discharge FET (BGATE)
      8. 8.3.8  DEFAULT Mode
      9. 8.3.9  Safety Timer and Watchdog Timer (BQ24160/BQ24161/BQ24161B/BQ24163 only)
      10. 8.3.10 D+, D– Based Adapter Detection for the USB Input (D+, D–, BQ24160/0A/3)
      11. 8.3.11 USB Input Current Limit Selector Input (PSEL, BQ24161/161B/168 only)
      12. 8.3.12 Hardware Chip Disable Input (CD)
      13. 8.3.13 LDO Output (DRV)
      14. 8.3.14 External NTC Monitoring (TS)
      15. 8.3.15 Thermal Regulation and Protection
      16. 8.3.16 Input Voltage Protection in Charge Mode
        1. 8.3.16.1 Sleep Mode
        2. 8.3.16.2 Input Voltage Based DPM
        3. 8.3.16.3 Bad Source Detection
        4. 8.3.16.4 Input Overvoltage Protection
        5. 8.3.16.5 Reverse Boost (Boost Back) Prevention Circuit
      17. 8.3.17 Charge Status Outputs (STAT, INT)
      18. 8.3.18 Good Battery Monitor
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Interface Description
        1. 8.5.1.1 F/S Mode Protocol
    6. 8.6 Register Maps
      1. 8.6.1 Status/Control Register (READ/WRITE)
      2. 8.6.2 Battery/ Supply Status Register (READ/WRITE)
      3. 8.6.3 Control Register (READ/WRITE)
      4. 8.6.4 Control/Battery Voltage Register (READ/WRITE)
      5. 8.6.5 Vender/Part/Revision Register (READ only)
      6. 8.6.6 Battery Termination/Fast Charge Current Register (READ/WRITE)
      7. 8.6.7 VIN-DPM Voltage/ DPPM Status Register
      8. 8.6.8 Safety Timer/ NTC Monitor Register (READ/WRITE)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Inductor and Capacitor Selection Guidelines
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Requirements for SYS Output
    2. 10.2 Requirements for Charging
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
      1.      Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Layout Guidelines

It is important to pay special attention to the PCB layout. Figure 11-1 provides a sample layout for the high current paths of the BQ2416xx. A list of layout guidelines follows.

  • To obtain optimal performance, the power input capacitors, connected from the PMID input to PGND, must be placed as close as possible to the BQ2416xx
  • Minimize the amount of inductance between BAT and the postive connection of the battery terminal. If a large parasitic board inductance on BAT is expected, increase the bypass capacitance on BAT.
  • Place 4.7-µF input capacitor as close to PMID_ pin and PGND pin as possible to make high frequency current loop area as small as possible. Place 1-µF input capacitor GNDs as close to the respective PMID cap GND and PGND pins as possible to minimize the ground difference between the input and PMID_.
  • The traces from the input connector to the inputs of the BQ2416xx should be as wide as possible to minimize the impedance in the line. Although the VINDPM feature will allow operation from input sources having high resistances(impedances), the BQ2416xx input pins (IN and USB) have been optimized to connect to input sources with no more than 350 mΩ of input resistance, including cables and PCB traces
  • The local bypass capacitor from SYS to GND should be connected between the SYS pin and PGND of the IC. The intent is to minimize the current path loop area from the SW pin through the LC filter and back to the PGND pin.
  • Place all decoupling capacitors close to their respective IC pins and as close as to PGND (do not place components such that routing interrupts power stage currents). All small control signals should be routed away from the high-current paths.
  • The PCB should have a ground plane (return) connected directly to the return of all components through vias (two vias per capacitor for power-stage capacitors, one via per capacitor for small-signal components). It is also recommended to put vias inside the PGND pads for the IC, if possible. A star ground design approach is typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A single ground plane for this design gives good results. With this small layout and a single ground plane, there is no ground-bounce issue, and having the components segregated minimizes coupling between signals.
  • The high-current charge paths into IN, USB, BAT, SYS and from the SW pins must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be connected to the ground plane to return current through the internal low-side FET.
  • For high-current applications, the balls for the power paths should be connected to as much copper in the board as possible. This allows better thermal performance because the board conducts heat away from the IC.