ZHCSAF6H October   2012  – August 2015

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Device Options
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Charge Profile
      2. 9.3.2  EN1 and EN2 Pins
      3. 9.3.3  External Settings: ISET, ILIM and VIN_DPM
      4. 9.3.4  BC1.2 D+/D- Detection
      5. 9.3.5  Transient Response
      6. 9.3.6  AnyBoot Battery Detection
      7. 9.3.7  Input Voltage Based DPM
      8. 9.3.8  Sleep Mode
      9. 9.3.9  Input Over-Voltage Protection
      10. 9.3.10 NTC Monitor
      11. 9.3.11 Production Test Mode
      12. 9.3.12 Safety Timer
      13. 9.3.13 Watchdog Timer
      14. 9.3.14 Fault Modes
      15. 9.3.15 Dynamic Power Path Management
    4. 9.4 Device Functional Modes
      1. 9.4.1 I2C Operation (Host Mode / Default Mode)
    5. 9.5 Programming
      1. 9.5.1 Serial Interface Description
        1. 9.5.1.1 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1 Register #1
      2. 9.6.2 Register #2
      3. 9.6.3 Register #3
      4. 9.6.4 Register #4
      5. 9.6.5 Register #5
      6. 9.6.6 Register #6
      7. 9.6.7 Register #7
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 Glossary
  14. 14机械、封装和可订购信息
    1. 14.1 封装摘要

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

10.1 Application Information

The bq2425x devices are high-efficiency switched-mode chargers. The device has integrated power FETs that are able to charge at up to a 2-A charging rate, and an integrated 50-mA LDO. In I2C mode (bq24251), the device has programmable battery charge voltage (VBATREG), charge current (ICHG), input current limit (ILIM), and input over-voltage protection threshold (VOVP). The charge current and the input current limit are programmed using external resistors (RISET and RILIM) connected from the ISET and ILIM pins to ground. The range of these resistors can be found in the datasheet. Both of these currents can be programmed up to 2 A. The device also has complete system-level protection such as input under-voltage lockout (UVLO), input over-voltage protection (OVP), battery OVP, sleep mode, thermal regulation and thermal shutdown, voltage-based NTC monitoring input, and safety timers.

10.2 Typical Application

bq24251 bq24253 bq24251_app_circuit_LUSBA1.gif Figure 29. bq24251 Typical Application Circuit

10.2.1 Design Requirements

Use the following typical application design procedure to select external components values for the bq24251 device.

Table 5. Design Parameters

SPECIFICATION TEST CONDITION MIN TYP MAX UNIT
Input DC voltage, VIN Recommended input voltage range 4.35 10.5 V
Input current Recommended input current range 2 A
Charge current Fast charge current range 0.5 2 A
Output regulation voltage Standalone mode or I2C default mode 4.2 V
Output regulation voltage I2C host mode: operating in voltage regulation, programmable range 3.5 4.44 V
LDO LDO output voltage 4.9 V

10.2.2 Detailed Design Procedure

10.2.2.1 Inductor Selection

The inductor selection depends on the application requirements. The bq24250 is designed to operate at around 1 µH. The value will have an effect on efficiency, and the ripple requirements, stability of the charger, package size, and DCR of the inductor. The 1-μH inductor provides a good tradeoff between size and efficiency and ripple.

Once the inductance has been selected, the peak current is needed in order to choose the saturation current rating of the inductor. Make sure that the saturation current is always greater than or equal to the calculated IPEAK. The following equation can be used to calculate the current ripple:

Equation 6. ΔIL = {VBAT (VIN – VBAT)}/(VIN x ƒs x L)

Then use current ripple to calculate the peak current as follows:

Equation 7. IPEAK = Load x (1 + ΔIL/2)

In this design example, the regulation voltage is set to 4.2 V, the input voltage is 5 V and the inductance is selected to be 1-µH. The maximum charge current that can be used in this application is 1A and can be set by I2C command. The peak current is needed in order to choose the saturation current rating of the inductor. Using equation 6 and 7, ΔIL is calculated to be 0.224 A and the inductor peak current is 1.112 A. A 1-µF BAT cap is needed and 22-µF SYS cap is needed on the system trace.

The default settings for external fast charge current and external setting of current limit are chosen to be IFC=500 mA and ILIM=1 A. RISET and RILIM need to be calculated using equation 1 and 2 in the data sheet.

The fast charge current resistor (RISET) can be set as follows:

RISET=250/0.5A=500Ω

The input current limit resistor (RILIM) can be set as follows:

RILIM= 270/1A=270Ω

The external settings of VIN_DPM can be designed by calculating R1 and R2 according to Equation 3 in this data sheet and the typical application circuit. VIN_DPM should be chosen first along with R1. VIN_DPM is chosen to be 4.48 V and R1 is set to 274 KΩ in this design example. Using equation 3, the value of R2 is calculated to be 100 KΩ.

In this design example, the application needs to be JEITA compliant. Thus, TCOLD must be 0°C and THOT must be 60°C. If an NTC resistor is chosen such that the beta is 4500K and the nominal resistance is 13 KΩ, the calculated R3 and R4 values are 5 KΩ and 8.8 KΩ respectively. These results are obtained from Equation 4 and Equation 5 in this data sheet.

10.2.3 Application Curves

bq24251 bq24253 Start_Up2_SLUSBA1.gif
VBAT = 3.8 V ICHG = 1 A
ISYS = 0 A ILIM = 1.5 A
Figure 30. Startup
bq24251 bq24253 CCM_Operation2_SLUSBA1.gif
VBAT = 3.3 V ICHG = 1 A VIN = 5.2 V
ISYS = 0 A
Figure 32. 1.0 µH CCM Operation
bq24251 bq24253 DPM_Start_Up2_SLUSBA1.gif
VBAT = 3.6 V ICHG = 2 A VDPM = 4.36 V
ISYS = 0 A ILIM = 0.5 A
Figure 31. VDPM Startup, 4.2 V
bq24251 bq24253 bq2425x_tran_resp_CH_EN_lusba1a.png
Figure 33. 2-A Load Step Transient
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