ZHCSDO3C August   2014  – December 2016

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Battery Only
      2. 8.3.2  Adapter Detect and ACOK Output
        1. 8.3.2.1 Adapter Overvoltage (ACOVP)
      3. 8.3.3  System Power Selection
      4. 8.3.4  System Power Up
        1. 8.3.4.1 Dynamic Power Management (IDPM) and Supplement Mode
        2. 8.3.4.2 Minimum System Voltage Regulation and LDO Mode
      5. 8.3.5  Current and Power Monitor
        1. 8.3.5.1 High Accuracy Current Sense Amplifier (IADP and IBAT)
        2. 8.3.5.2 High Accuracey Power Sense Amplifier (PMON)
      6. 8.3.6  Processor Hot Indication for CPU Throttling
      7. 8.3.7  Converter Operation
        1. 8.3.7.1 Continuous Conduction Mode (CCM)
        2. 8.3.7.2 Discontinuous Conduction Mode (DCM)
        3. 8.3.7.3 PFM Mode
        4. 8.3.7.4 Switching Frequency Adjust
      8. 8.3.8  Learn Mode
      9. 8.3.9  Charger Timeout
      10. 8.3.10 Device Protection Features
        1. 8.3.10.1 Input Overcurrent Protection (ACOC)
        2. 8.3.10.2 Converter Overcurrent Protection
        3. 8.3.10.3 Battery Overvoltage Protection (BATOVP)
        4. 8.3.10.4 System Overvoltage Protection (SYSOVP)
        5. 8.3.10.5 Thermal Shutdown Protection (TSHUT)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Battery Charging
      2. 8.4.2 System Voltage Regulation with Narrow VDC Architecture
    5. 8.5 Programming
      1. 8.5.1 SMBus Interface
        1. 8.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 8.5.1.2 Timing Diagrams
      2. 8.5.2 I2C Serial Interface
        1. 8.5.2.1 Data Validity
        2. 8.5.2.2 START and STOP Conditions
        3. 8.5.2.3 Byte Format
        4. 8.5.2.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 8.5.2.5 Slave Address and Data Direction Bit
        6. 8.5.2.6 Single Read and Write
        7. 8.5.2.7 Multi-Read and Multi-Write
    6. 8.6 Register Maps
      1. 8.6.1 ChargeOption0 Register
      2. 8.6.2 ChargeOption1 Register
      3. 8.6.3 ChargeOption2 Register
      4. 8.6.4 ProchotOption0 Register
      5. 8.6.5 ProchotOption1 Register
      6. 8.6.6 Setting the Charge Current
      7. 8.6.7 Setting the Maximum Charge Voltage
      8. 8.6.8 Setting the Minimum Charge Voltage
      9. 8.6.9 Setting Input Current
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application, bq24770
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Reverse Input Voltage Protection
        2. 9.2.2.2 Inductor Selection
        3. 9.2.2.3 Input Capacitor
        4. 9.2.2.4 Output Capacitor
        5. 9.2.2.5 Power MOSFETs Selection
        6. 9.2.2.6 Input Filter Design
      3. 9.2.3 Application Curves
      4. 9.2.4 Typical Application, bq24773
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
      1. 11.2.1 Layout Consideration of Current Path
      2. 11.2.2 Layout Consideration of Short Circuit Protection
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Pin Configuration and Functions

RUY Package
28-Pin WQFN
Top View
bq24770 bq24773 po_device_pinout_slus03.gif

Pin Functions

PIN NAME DESCRIPTION
1 ACN Input current sense resistor negative input. Place an optional 0.1-µF ceramic capacitor from ACN to GND for common-mode filtering. Place a 0.1-µF ceramic capacitor from ACN to ACP to provide differential mode filtering.
2 ACP Input current sense resistor positive input. Place a 1-µF and 0.1-µF ceramic capacitor from ACP to GND for common-mode filtering. Place a 0.1-µF ceramic capacitor from ACN to ACP to provide differential-mode filtering.
3 CMSRC ACDRV charge pump source input. Place a 4 kΩ resistor from CMSRC to the common source of ACFET (Q1) and RBFET (Q2) limits the in-rush current on CMSRC pin.
When CMSRC is grounded, ACDRV pin becomes logic output internally puled up to REGN. ACDRV HIGH indicates to external driver that ACFET/RBFET can be turned on. It directly drives CMOS logic.
4 ACDRV Charge pump output to drive both adapter input n-channel MOSFET (ACFET) and reverse blocking n-channel MOSFET (RBFET). ACDRV voltage is 6 V above CMSRC to turn on ACFET/RBFET when ACOK goes HIGH. Place a 4 kΩ resistor from ACDRV to the gate of ACFET and RBFET limits the in-rush current on ACDRV pin.
When CMSRC is grounded, ACDRV pin becomes logic output internally pulled up to REGN. ACDRV HIGH indicates that ACFET/RBFET can be turned on. It directly drives CMOS logic.
5 ACOK Active HIGH AC adapter detection open drain output. It is pulled HIGH to external pull-up supply rail by external pull-up resistor when a valid adapter is present (ACDET above 2.4 V, VCC above UVLO but below ACOV and VCC above BAT). If any of the above conditions is not valid, ACOK is pulled LOW by internal MOSFET. Connect a 10-kΩ pull up resistor from ACOK to the pull-up supply rail.
6 ACDET Adapter detection input. Program adapter valid input threshold by connecting a resistor divider from adapter input to ACDET pin to GND pin.
When ACDET pin is above 0.6 V and VCC is above UVLO, REGN LDO is present, ACOK comparator, and input current monitor buffer (IADP) are all active. Independent comparator, IBAT buffer, PMON buffer and PROCHOT can be enabled with SMBus/I2C.
When ACDET pin is above 2.4 V, and VCC is above BAT, but below ACOV, ACOK goes HIGH. ACFET/RBFET turns on.
7 IADP Buffered adapter current output. V(IADP) = 40 or 80 × (V(ACP) – V(ACN))
The ratio of 40x and 80x is selectable with SMBus/I2C. Place 100pF or less ceramic decoupling capacitor from IADP pin to GND. This pin can be floating if it is not in use. IADP output voltage is clamped below 3.3 V.
8 IBAT Buffered battery current selected by SMBus/I2C. V(IBAT) = 20 × (V(SRP) – V(SRN)) for charge current, or V(IBAT) = 8 or 16 × (V(SRN) – V(SRP)) for discharge current, with ratio selectable through SMBus/I2C. Place 100pF or less ceramic decoupling capacitor from IBAT pin to GND. This pin can be floating if not in use. Its output voltage is clamped below 3.3 V.
9 PMON Current mode system power monitor. The output voltage is proportional to the total power from the adapter and battery. The gain is selectable through SMBus/I2C. This pin can be floating if not in use. Its output voltage is clamped below 3.3 V. The maximum cap on PMON is 100 pF.
10 PROCHOT Active low open drain output of “processor hot” indicator. It monitors adapter input current, battery discharge current, and system voltage. After any event in the PROCHOT profile is triggered, a minimum 10-ms pulse is asserted.
11 SDA SMBus/I2C open-drain data I/O. Connect to data line from the host controller or smart battery. Connect a 10-kΩ pull-up resistor according to SMBus/I2C specifications.
12 SCL SMBus/I2C clock input. Connect to clock line from the host controller or smart battery. Connect a 10-kΩ pull-up resistor according to SMBus/I2C specifications.
13 CMPIN Input of independent comparator. Internal reference, output polarity and deglitch time is selectable by SMBus/I2C. With polarity HIGH (0x3B[6]=1), place a resistor between CMPIN and CMPOUT to program hysteresis. With polarity LOW (0x3B[6]=0), the internal hysteresis is 100 mV. If the independent comparator is not in use, tie CMPIN to ground.
14 CMPOUT Open-drain output of independent comparator. Place 10kΩ pull-up resistor from CMPOUT to pull-up supply rail. Internal reference, output polarity and deglitch time are selectable by SMBus/I2C.
15 BATPRES Active low battery present input signal. LOW indicates battery present, HIGH indicates battery absent. When BATPRES pin goes from LOW to HIGH, the device exits LEARN mode, and disable charge. REG 0x15() value goes back to default. Host can enable IDPM and charge through SMBus/I2C when BATPRES is HIGH.
16 CELL Battery cell selection pin. GND for 1-cell, Float for 2-cell, and HIGH for 3- or 4-cell. CELL pin is biased from REGN. Before host writes to MaxChargeVoltage(), MaxChargeVotage() follows the CELL pin setting.
CELL pin also sets SYSOVP threshold. GND for 5 V, Float for 12 V and HIGH for 18.5 V. When REG 0x15() is above 15V, SYSOVP is disabled.
17 BAT Battery-voltage remote sense. Directly connect a Kelvin sense trace from the battery-pack positive terminal to the BAT pin to accurately sense the battery pack voltage. Place a 0.1-μF capacitor from BAT to GND close to the IC to filter high-frequency noise.
18 BATDRV P-channel battery FET (BATFET) gate driver output. It is shorted to SRN to turn off the BATFET. It goes below SRN to turn on BATFET. BATFET is in linear mode to regulate SYS at minimum system voltage when battery is depleted. BATFET is fully on during fast charge and supplement mode.
Connect the source of the BATFET to charge current sensing node SRN pin, and the drain of the BATFET to the battery pack positive node BAT pin.
19 SRN Charge current sense resistor negative input. SRN pin is for battery voltage sensing as well. Connect SRN pin with a 0.1µF ceramic capacitor to GND for common-mode filtering. Connect a 0.1-µF ceramic capacitor from SRP to SRN to provide differential mode filtering.
20 SRP Charge current sense resistor positive input. Connect a 0.1-µF ceramic capacitor from SRP to SRN to provide differential mode filtering.
21 ILIM Input current limit input. Program ILIM voltage by connecting a resistor divider from supply rail to ILIM pin to GND pin. The ILIM voltage is calculated as: V(ILIM) = 20 × IDPM × RAC, in which IDPM is the target regulation current.
The lower of ILIM voltage and DAC limit voltage sets input current regulation limit. Host can ignore the IDPM setting from ILIM pin by setting 0x38[7]=0.
22 GND IC ground. On PCB layout, connect to analog ground plane, and only connect to power ground plane through the power pad underneath IC.
23 LODRV Low side power MOSFET driver output. Connect to low side n-channel MOSFET gate.
24 REGN 5.4V linear regulator output supplied from VCC. The LDO is active when ACDET above 0.6V, VCC above UVLO. Connect a 1µF ceramic capacitor from REGN to power ground.
25 BTST High side power MOSFET driver power supply. Connect a 0.047-µF capacitor from BTST to PHASE. The bootstrap diode between REGN and BTST is integrated.
26 HIDRV High side power MOSFET driver output. Connect to the high side n-channel MOSFET gate.
27 PHASE High side power MOSFET driver source. Connect to the source of the high side n-channel MOSFET.
28 VCC Input supply from adapter or battery. Place Schottky diode-OR from adapter/battery. After the Schottky diode, place 10-Ω resistor and 1-µF capacitor to ground as low pass filter to limit inrush current.
Thermal Pad Exposed pad beneath the IC. Analog ground and power ground star-connected only at the thermal pad plane. Always solder thermal pad to the board, and have vias on the thermal pad plane connecting to analog ground and power ground planes. It also serves as a thermal pad to dissipate the heat.