ZHCSE30C August   2015  – September 2016 BQ25120 , BQ25121

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Ship Mode
      2. 9.3.2  High Impedance Mode
      3. 9.3.3  Active Battery Only Connected
      4. 9.3.4  Voltage Based Battery Monitor
      5. 9.3.5  Sleep Mode
      6. 9.3.6  Input Voltage Based Dynamic Power Management (VIN(DPM))
      7. 9.3.7  Input Overvoltage Protection and Undervoltage Status Indication
      8. 9.3.8  Battery Charging Process and Charge Profile
      9. 9.3.9  Dynamic Power Path Management Mode
      10. 9.3.10 Battery Supplement Mode
      11. 9.3.11 Default Mode
      12. 9.3.12 Termination and Pre-Charge Current Programming by External Components (IPRETERM)
      13. 9.3.13 Input Current Limit Programming by External Components (ILIM)
      14. 9.3.14 Charge Current Programming by External Components (ISET)
      15. 9.3.15 Safety Timer and Watchdog Timer
      16. 9.3.16 External NTC Monitoring (TS)
      17. 9.3.17 Thermal Protection
      18. 9.3.18 Typical Application Power Dissipation
      19. 9.3.19 Status Indicators (PG and INT)
      20. 9.3.20 Chip Disable (CD)
      21. 9.3.21 Buck (PWM) Output
      22. 9.3.22 Load Switch / LDO Output and Control
      23. 9.3.23 Manual Reset Timer and Reset Output (MR and RESET)
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Serial Interface Description
      2. 9.5.2 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1  Status and Ship Mode Control Register
        1. Table 12. Status and Ship Mode Control Register
      2. 9.6.2  Faults and Faults Mask Register
        1. Table 13. Faults and Faults Mask Register
      3. 9.6.3  TS Control and Faults Masks Register
        1. Table 14. TS Control and Faults Masks Register, Memory Location 0010
      4. 9.6.4  Fast Charge Control Register
        1. Table 15. Fast Charge Control Register
      5. 9.6.5  Termination/Pre-Charge and I2C Address Register
        1. Table 16. Termination/Pre-Charge and I2C Address Register
      6. 9.6.6  Battery Voltage Control Register
        1. Table 17. Battery Voltage Control Register
      7. 9.6.7  SYS VOUT Control Register
        1. Table 18. SYS VOUT Control Register
      8. 9.6.8  Load Switch and LDO Control Register
        1. Table 20. Load Switch and LDO Control Register
      9. 9.6.9  Push-button Control Register
        1. Table 21. Push-button Control Register
      10. 9.6.10 ILIM and Battery UVLO Control Register
        1. Table 22. ILIM and Battery UVLO Control Register, Memory Location 1001
      11. 9.6.11 Voltage Based Battery Monitor Register
        1. Table 23. Voltage Based Battery Monitor Register, Memory Location 1010
      12. 9.6.12 VIN_DPM and Timers Register
        1. Table 24. VIN_DPM and Timers Register
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Default Settings
        2. 10.2.2.2 Choose the Correct Inductance and Capacitance
        3. 10.2.2.3 Calculations
          1. 10.2.2.3.1 Program the Fast Charge Current (ISET)
          2. 10.2.2.3.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.3.3 Program the Pre-charge/termination Threshold (IPRETERM)
          4. 10.2.2.3.4 TS Resistors (TS)
      3. 10.2.3 Application Performance Curves
        1. 10.2.3.1 Charger Curves
        2. 10.2.3.2 SYS Output Curves
        3. 10.2.3.3 Load Switch and LDO Curves
        4. 10.2.3.4 LS/LDO Output Curves
        5. 10.2.3.5 Timing Waveforms Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.3 Active Battery Only Connected

When the battery above VBATUVLO is connected with no input source, the battery discharge FET is turned on. After the battery rises above VBATUVLO and the deglitch time is reached, the SYS output starts to rise. The current from PMID and SYS is not regulated, but is protected by a short circuit current limit. If the short circuit limit is reached for the deglitch time (tDGL_SC), the battery discharge FET is turned off for the recovery time (tREC_SC). After the recovery time, the battery FET is turned on to test if the short has been removed. If it has not, the FET turns off and the process repeats until the short is removed. This process protects the internal FET from over current. During this event PMID will likely droop and cause SYS to go out of regulation.

To provide designers the most flexibility in optimizing their system, an adjustable BATUVLO is provided. When the voltage drops below the VBATUVLO threshold, the battery discharge FET is turned off. Deeper discharge of the battery enables longer times between charging, but may shorten the battery life. The BATUVLO is adjustable with a fixed 100-mV hysteresis.

If a valid VIN is connected during active battery mode, VIN> VUVLO, the supplement and battery discharge FET is turned on when the battery voltage is above the minimum VBATUVLO.

Drive CD high or write the CE register to disable charge when VIN> VUVLO is present. CD is internally pulled down. When exiting this mode, charging resumes if VIN is present, CD is low and charging is enabled.

All HOST interfaces (CD, SDA/SCL, INT, RESET and LSCTRL) are active no later than 5 ms after SYS reaches the programmed level.
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