ZHCSE30C August   2015  – September 2016 BQ25120 , BQ25121

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. 说明 (续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Ship Mode
      2. 9.3.2  High Impedance Mode
      3. 9.3.3  Active Battery Only Connected
      4. 9.3.4  Voltage Based Battery Monitor
      5. 9.3.5  Sleep Mode
      6. 9.3.6  Input Voltage Based Dynamic Power Management (VIN(DPM))
      7. 9.3.7  Input Overvoltage Protection and Undervoltage Status Indication
      8. 9.3.8  Battery Charging Process and Charge Profile
      9. 9.3.9  Dynamic Power Path Management Mode
      10. 9.3.10 Battery Supplement Mode
      11. 9.3.11 Default Mode
      12. 9.3.12 Termination and Pre-Charge Current Programming by External Components (IPRETERM)
      13. 9.3.13 Input Current Limit Programming by External Components (ILIM)
      14. 9.3.14 Charge Current Programming by External Components (ISET)
      15. 9.3.15 Safety Timer and Watchdog Timer
      16. 9.3.16 External NTC Monitoring (TS)
      17. 9.3.17 Thermal Protection
      18. 9.3.18 Typical Application Power Dissipation
      19. 9.3.19 Status Indicators (PG and INT)
      20. 9.3.20 Chip Disable (CD)
      21. 9.3.21 Buck (PWM) Output
      22. 9.3.22 Load Switch / LDO Output and Control
      23. 9.3.23 Manual Reset Timer and Reset Output (MR and RESET)
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Serial Interface Description
      2. 9.5.2 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1  Status and Ship Mode Control Register
        1. Table 12. Status and Ship Mode Control Register
      2. 9.6.2  Faults and Faults Mask Register
        1. Table 13. Faults and Faults Mask Register
      3. 9.6.3  TS Control and Faults Masks Register
        1. Table 14. TS Control and Faults Masks Register, Memory Location 0010
      4. 9.6.4  Fast Charge Control Register
        1. Table 15. Fast Charge Control Register
      5. 9.6.5  Termination/Pre-Charge and I2C Address Register
        1. Table 16. Termination/Pre-Charge and I2C Address Register
      6. 9.6.6  Battery Voltage Control Register
        1. Table 17. Battery Voltage Control Register
      7. 9.6.7  SYS VOUT Control Register
        1. Table 18. SYS VOUT Control Register
      8. 9.6.8  Load Switch and LDO Control Register
        1. Table 20. Load Switch and LDO Control Register
      9. 9.6.9  Push-button Control Register
        1. Table 21. Push-button Control Register
      10. 9.6.10 ILIM and Battery UVLO Control Register
        1. Table 22. ILIM and Battery UVLO Control Register, Memory Location 1001
      11. 9.6.11 Voltage Based Battery Monitor Register
        1. Table 23. Voltage Based Battery Monitor Register, Memory Location 1010
      12. 9.6.12 VIN_DPM and Timers Register
        1. Table 24. VIN_DPM and Timers Register
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Default Settings
        2. 10.2.2.2 Choose the Correct Inductance and Capacitance
        3. 10.2.2.3 Calculations
          1. 10.2.2.3.1 Program the Fast Charge Current (ISET)
          2. 10.2.2.3.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.3.3 Program the Pre-charge/termination Threshold (IPRETERM)
          4. 10.2.2.3.4 TS Resistors (TS)
      3. 10.2.3 Application Performance Curves
        1. 10.2.3.1 Charger Curves
        2. 10.2.3.2 SYS Output Curves
        3. 10.2.3.3 Load Switch and LDO Curves
        4. 10.2.3.4 LS/LDO Output Curves
        5. 10.2.3.5 Timing Waveforms Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Fast Charge Control Register

Memory location 0x03h, Reset State: 0001 0100 (bq25120)

Figure 26. Fast Charge Control Register
7 (MSB) 6 5 4 3 2 1 0 (LSB)
0 0 0 1 0 1 0 0
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset

Table 15. Fast Charge Control Register

Bit Field Type Reset Description
B7 (MSB) ICHRG_RANGE R/W 0 0 – to select charge range from 5 mA to 35 mA, ICHRG bits are 1-mA steps
1 – to select charge range from 40 mA to 300 mA, ICHRG bits are 10-mA steps
B6 ICHRG_4 R/W 0 Charge current 16 mA or 160 mA
B5 ICHRG_3 R/W 0 Charge current 8 mA or 80 mA
B4 ICHRG_2 R/W 1 Charge current 4 mA or 40 mA
B3 ICHRG_1 R/W 0 Charge current 2 mA or 20 mA
B2 ICHRG_0 R/W 1 Charge current 1 mA or 10 mA
B1 CE R/W 0 0 – Charger enabled
1 – Charger is disabled
B0 (LSB) HZ_MODE R/W 0 0 – Not high impedance mode
1 – High impedance mode
ICHRG_RANGE and ICHRG bits are used to set the charge current. The ICHRG is calculated using the following equation: If ICHRG_RANGE is 0, then ICHRG = 5 mA + ICHRGCODE x 1 mA. If ICHRG_RANGE is 1, then ICHRG = 40 mA + ICHRGCODE x 10 mA. If a value greater than 35 mA (ICHRG_RANGE = 0) or 300 mA (ICHRG_RANGE = 1) is written, the setting goes to 35 mA or 300 mA respectively except if the ICHRG bits are all 1 (that is, 11111), then the externally programmed value is used. The PRETERM bits must also be set prior to writing all 1s to ensure the external ISET current is used as well as the proper termination and pre-charge values are used. For IPRETERM = 5%, set the IPRETERM bits to 000001, for IPRETERM = 10%, set the IPRETERM bits to 000010, for IPRETERM = 15%, set the IPRETERM bits to 000100, and for IPRETERM = 20%, set the iPRETERM bits to 001000. The default is programmed by the external resistor on ISET, or if not populated and tied to GND, by OTP.