ZHCSE30C August   2015  – September 2016 BQ25120 , BQ25121

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. 说明 (续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Ship Mode
      2. 9.3.2  High Impedance Mode
      3. 9.3.3  Active Battery Only Connected
      4. 9.3.4  Voltage Based Battery Monitor
      5. 9.3.5  Sleep Mode
      6. 9.3.6  Input Voltage Based Dynamic Power Management (VIN(DPM))
      7. 9.3.7  Input Overvoltage Protection and Undervoltage Status Indication
      8. 9.3.8  Battery Charging Process and Charge Profile
      9. 9.3.9  Dynamic Power Path Management Mode
      10. 9.3.10 Battery Supplement Mode
      11. 9.3.11 Default Mode
      12. 9.3.12 Termination and Pre-Charge Current Programming by External Components (IPRETERM)
      13. 9.3.13 Input Current Limit Programming by External Components (ILIM)
      14. 9.3.14 Charge Current Programming by External Components (ISET)
      15. 9.3.15 Safety Timer and Watchdog Timer
      16. 9.3.16 External NTC Monitoring (TS)
      17. 9.3.17 Thermal Protection
      18. 9.3.18 Typical Application Power Dissipation
      19. 9.3.19 Status Indicators (PG and INT)
      20. 9.3.20 Chip Disable (CD)
      21. 9.3.21 Buck (PWM) Output
      22. 9.3.22 Load Switch / LDO Output and Control
      23. 9.3.23 Manual Reset Timer and Reset Output (MR and RESET)
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Serial Interface Description
      2. 9.5.2 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1  Status and Ship Mode Control Register
        1. Table 12. Status and Ship Mode Control Register
      2. 9.6.2  Faults and Faults Mask Register
        1. Table 13. Faults and Faults Mask Register
      3. 9.6.3  TS Control and Faults Masks Register
        1. Table 14. TS Control and Faults Masks Register, Memory Location 0010
      4. 9.6.4  Fast Charge Control Register
        1. Table 15. Fast Charge Control Register
      5. 9.6.5  Termination/Pre-Charge and I2C Address Register
        1. Table 16. Termination/Pre-Charge and I2C Address Register
      6. 9.6.6  Battery Voltage Control Register
        1. Table 17. Battery Voltage Control Register
      7. 9.6.7  SYS VOUT Control Register
        1. Table 18. SYS VOUT Control Register
      8. 9.6.8  Load Switch and LDO Control Register
        1. Table 20. Load Switch and LDO Control Register
      9. 9.6.9  Push-button Control Register
        1. Table 21. Push-button Control Register
      10. 9.6.10 ILIM and Battery UVLO Control Register
        1. Table 22. ILIM and Battery UVLO Control Register, Memory Location 1001
      11. 9.6.11 Voltage Based Battery Monitor Register
        1. Table 23. Voltage Based Battery Monitor Register, Memory Location 1010
      12. 9.6.12 VIN_DPM and Timers Register
        1. Table 24. VIN_DPM and Timers Register
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Default Settings
        2. 10.2.2.2 Choose the Correct Inductance and Capacitance
        3. 10.2.2.3 Calculations
          1. 10.2.2.3.1 Program the Fast Charge Current (ISET)
          2. 10.2.2.3.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.3.3 Program the Pre-charge/termination Threshold (IPRETERM)
          4. 10.2.2.3.4 TS Resistors (TS)
      3. 10.2.3 Application Performance Curves
        1. 10.2.3.1 Charger Curves
        2. 10.2.3.2 SYS Output Curves
        3. 10.2.3.3 Load Switch and LDO Curves
        4. 10.2.3.4 LS/LDO Output Curves
        5. 10.2.3.5 Timing Waveforms Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Termination and Pre-Charge Current Programming by External Components (IPRETERM)

The termination current threshold is user programmable through an external resistor or through registers over I2C. Set the termination current using the IPRETERM pin by connecting a resistor from IPRETERM to GND. The termination can be set between 5% and 20% of the programmed output current set by ISET, using Table 3 for guidance:

Table 3. IPRETERM Resistor Settings

IPRE_CHARGE and ITERM KKIPRETERM RIPRETERM
(STANDARD 1% VALUES)
UNIT
MIN TYP
(% of ISET)
MAX MIN TYP MAX RECOMMENDED RIPRETERM
5 180 200 220 15000 Ω
10 180 200 220 4990 Ω
15 180 200 220 1650 Ω
20 180 200 220 549 Ω

Using the I2C register, the termination current can be programmed with a minimum of 500 µA and a maximum of 37 mA.  

The pre-charge current is not independently programmable through the external resistor, and is set at the termination current. The pre-charge and termination currents are programmable using the IPRETERM registers. If no IPRETERM resistor is connected and the pin is tied to GND, the default values in the IPRETERM registers are used. The external value can be used in host mode by configuring the IPRETERM registers. If the external ICHG setting will be used after being in Host mode, the IPRETERM registers should be set to match the desired external threshold for the highest ICHG accuracy.

Termination is disabled when any loop other than CV is active.