ZHCSNP0A august   2020  – march 2021 BQ25171-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 典型特性
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power Up from Input Source
        1. 7.3.1.1 ISET Pin Detection
        2. 7.3.1.2 CHM_TMR Pin Detection
        3. 7.3.1.3 VSET Pin Detection
        4. 7.3.1.4 Charger Power Up
      2. 7.3.2 Battery Charging Features
        1. 7.3.2.1 Lithium-Ion Battery Charging Profile
          1. 7.3.2.1.1 NiMH Battery Charging Profile
        2. 7.3.2.2 Charge Termination and Battery Recharge
        3. 7.3.2.3 Charging Safety Timers
        4. 7.3.2.4 Battery Cold, Hot Temperature Qualification (TS Pin)
      3. 7.3.3 Status Outputs (STAT1, STAT2)
        1. 7.3.3.1 Charging Status Indicator (STAT1, STAT2)
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Input Overvoltage Protection (VIN OVP)
        2. 7.3.4.2 Output Overvoltage Protection (BAT OVP)
        3. 7.3.4.3 Output Overcurrent Protection (BAT OCP)
        4. 7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown or Undervoltage Lockout (UVLO)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Standby Mode
      4. 7.4.4 Fault Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 1s LiFePO4 Charger Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Program the Fast Charge Current, ISET:
          2. 8.2.1.2.2 TS Function
        3. 8.2.1.3 Application Curves
      2. 8.2.2 2s Li-Ion Charger with Power Path Design Example
        1. 8.2.2.1 Design Requirements
      3. 8.2.3 4s NiMH Charger Design Example
        1. 8.2.3.1 Design Requirements
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRC|10
散热焊盘机械数据 (封装 | 引脚)

6.5 Electrical Characteristics

3.0V < VIN < 18V and VIN > VOUT + VSLEEP, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
QUIESCENT CURRENTS
IQ_OUT Quiescent output current (OUT) OUT= 4.2V, IN floating or IN = 0V - 5V, Charge Disabled (CE high), TJ = 25 °C 0.350 0.6 µA
OUT= 4.2V, IN floating or IN = 0V - 5V, Charge Disabled (CE high), TJ < 105 °C 0.350 0.8 µA
IQ_OUT Quiescent output current (OUT) OUT = 8.4V, IN floating or IN = 0V - 14V, Charge Disabled (CE high), TJ = 25 °C 0.8 1.2 µA
OUT = 8.4V, IN floating or IN = 0V - 14V, Charge Disabled (CE high), TJ < 105 °C 0.8 1.5 µA
ISD_IN Shutdown input current (IN) with charge disabled IN = 5V, Charge Disabled (CE high), no battery 2 4 µA
IN = 14V, Charge Disabled (CE high), no battery 3.5 6 µA
ISTANDBY_IN Standby input current (IN) with charge terminated IN = 5V, Charge Enabled (CE low), charge terminated 190 µA
ISTANDBY_IN Standby input current (IN) with charge terminated IN = 14V, Charge Enabled (CE low), charge terminated 230 µA
IQ_IN Quiescent input current (IN) IN = 5V, OUT = 3.8V, Charge Enabled (CE low), ICHG = 0A 0.45 0.6 mA
IQ_IN Quiescent input current (IN) IN = 14V, OUT = 7.6V, Charge Enabled (CE low), ICHG = 0A 0.45 0.6 mA
INPUT
VIN_OP IN operating range 3.0 18 V
VIN_LOWV IN voltage to start charging IN rising 3.05 3.09 3.15 V
VIN_LOWV IN voltage to stop charging IN falling 2.80 2.95 3.10 V
VSLEEPZ Exit sleep mode threshold IN rising, VIN - VOUT, OUT = 4V 95 135 175 mV
VSLEEP Sleep mode threshold hysteresis IN falling, VIN - VOUT, OUT = 4V 80 mV
VIN_OV VIN overvoltage rising threshold IN rising 18.1 18.4 18.7 V
VIN_OVZ VIN overvoltage falling threshold IN falling 18.2 V
CONFIGURATION PINS SHORT/OPEN PROTECTION
RISET_SHORT Highest resistor value considered short RISET below this at startup, charger does not initiate charge, power cycle or CE toggle to reset 350 Ω
RVSET_SHORT Highest resistor value considered short RVSET below this at startup, charger does not initiate charge, power cycle or CE toggle to reset 2.8 kΩ
RVSET_OPEN Lowest resistor value considered open RVSET above this at startup, charger does not initiate charge, power cycle or CE toggle to reset 120 kΩ
RCHM_TMR_SHORT Highest resistor value considered short RCHM_TMR below this at startup, charger latches off, power cycle or CE toggle to reset 2.8 kΩ
RCHM_TMR_OPEN Lowest resistor value considered open RCHM_TMR above this at startup, charger latches off, power cycle or CE toggle to reset 120 kΩ
BATTERY CHARGER
VDO Dropout voltage (VIN - VOUT) VIN falling, VOUT = 4.35V, IOUT = 500mA 425 mV
VREG_ACC OUT charge voltage regulation accuracy Tj = 25℃, all VSET settings –0.5 0.5 %
Tj = -40℃ to 125℃, all VSET settings –0.8 0.8 %
ICHG_RANGE Typical charge current regulation range VOUT > VBAT_LOWV 10 800 mA
KISET Charge current setting factor, ICHG = KISET / RISET 10mA < ICHG < 800mA 270 300 330 AΩ
ICHG_ACC Charge current accuracy (1) RISET = 375Ω, OUT = 3.8V or 7.6V 720 800 880 mA
RISET = 600Ω, OUT = 3.8V or 7.6V 450 500 550 mA
RISET = 3.0kΩ, OUT = 3.8V or 7.6V 90 100 110 mA
RISET = 30kΩ, OUT = 3.8V or 7.6V 9 10 11 mA
IPRECHG Typical pre-charge current, as percentage of ICHG VOUT < VBAT_LOWV 20 %
IPRECHG_ACC Precharge current accuracy RISET = 375Ω, OUT = 2.5V or 5.0V 144 160 176 mA
RISET = 600Ω, OUT = 2.5V or 5.0V 85 100 110 mA
RISET = 3.0kΩ, OUT = 2.5V or 5.0V 18 20 22 mA
RISET = 30kΩ, OUT = 2.5V or 5.0V 1.4 2 2.6 mA
ITERM Typical termination current, as percentage of ICHG VOUT = VREG 10 %
ITERM_ACC Termination current accuracy RISET = 600Ω, OUT = VREG = 4.2V or 8.4V 45 50 55 mA
RISET = 3.0kΩ, OUT = VREG = 4.2V or 8.4V 8.5 10 11.5 mA
RISET =30kΩ, OUT = VREG = 4.2V or 8.4V 0.4 1 1.6 mA
VBAT_SHORT Output (OUT) short circuit voltage rising threshold, per cell for Li-Ion chemistry OUT rising, VSET configured for Li-Ion , 1-cell or 2-cell 2.1 2.2 2.3 V
VBAT_SHORT Output (OUT) short circuit voltage rising threshold, per cell for LiFePO4 chemistry OUT rising, VSET configured for LiFePO4 , 1-cell or 2-cell 1.1 1.2 1.3 V
VBAT_SHORT_HYS Output (OUT) short circuit voltage hysteresis, per cell OUT falling 200 mV
IBAT_SHORT OUT short circuit charging current VOUT < VBAT_SHORT 12 16 20 mA
VBAT_LOWV Pre-charge to fast-charge transition threshold, per cell for Li-Ion chemistry OUT rising, VSET configured for Li-Ion , 1-cell or 2-cell 2.7 2.8 3.0 V
VBAT_LOWV Pre-charge to fast-charge transition threshold, per cell for Li-FePO4 chemistry OUT rising, VSET configured for LiFePO4 , 1-cell or 2-cell 1.9 2.0 2.1 V
VBAT_LOWV_HYS Battery LOWV hysteresis, per cell OUT falling, all charger configurations 100 mV
VRECHG Battery recharge threshold, per cell for Li-Ion chemistry OUT falling, VSET configured for Li-Ion , 1-cell or 2-cell, VREG_ACC - VOUT 75 100 125 mV
VRECHG Battery recharge threshold, per cell for LiFePO4 chemistry OUT falling, VSET configured for LiFePO4 , 1-cell or 2-cell, VREG_ACC - VOUT 175 200 225 mV
VRECHG Battery recharge threshold, per cell for NiMH chemistry OUT falling, VSET configured for 2-cell with intermittent charge enabled 1.305 1.330 1.355 V
RON Charging path FET on-resistance IN > 5V, TJ = 25°C 845 980 mΩ
IN > 5V, TJ = -40°C - 125°C 845 1350 mΩ
BATTERY CHARGER PROTECTION
VOUT_OVP OUT overvoltage rising threshold VOUT rising, as percentage of VREG 103 104 105 %
VOUT_OVP OUT overvoltage falling threshold VOUT falling, as percentage of VREG 101 102 103 %
VOUT_OVP OUT overvoltage rising threshold, per cell for NiMH chemistry VOUT rising, TS normal 1.65 1.70 1.75 V
VOUT_OVP OUT overvoltage falling threshold, per cell for NiMH chemistry VOUT falling, TS normal 1.40 1.45 1.50 V
IOUT_OCP Output current limit threshold IOUT rising 0.9 1 1.1 A
TEMPERATURE REGULATION AND TEMPERATURE SHUTDOWN
TREG Typical junction temperature regulation 125 °C
TSHUT Thermal shutdown rising threshold Temperature increasing 150 °C
Thermal shutdown falling threshold Temperature decreasing 135 °C
BATTERY-PACK NTC MONITOR
ITS_BIAS TS nominal bias current 36.5 38 39.5 µA
VCOLD Cold temperature threshold TS pin voltage rising (approx. 0°C) 0.99 1.04 1.09 V
Cold temperature exit threshold TS pin voltage falling (approx. 4°C) 0.83 0.88 0.93 V
VHOT Hot temperature threshold TS pin voltage falling (approx. 45°C) 176 188 200 mV
Hot temperature exit threshold TS pin voltage rising (approx. 40°C) 208 220 232 mV
VTS_CLAMP TS maximum voltage clamp TS pin open-circuit (float) 2.3 2.6 2.9 V
LOGIC INPUT PIN (/CE)
VIH Input high threshold level 1.3 V
VIL Input low threshold level 0.4 V
RPD_CE CE pin internal pulldown resistor 3.3 MΩ
LOGIC OUTPUT PIN (STAT1, STAT2)
VOL Output low threshold level Sink current = 5mA 0.4 V
IOUT_BIAS High-level leakage current Pull up rail 3.3V 1 µA
(1) Temperature Regulation (TREG) loop may reduce the output current depending on power dissipation and ambient temperature
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