ZHCSPT0 June 2022 BQ25172
PRODUCTION DATA
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NUMBER | ||
IN | 1 | P | Input power, connected to external DC supply. Bypass IN with a ≥1-μF capacitor to GND, placed close to the IC. |
ISET | 2 | I | Programs the device charge current. External resistor from ISET to GND defines charge current value. Expected range is 30 kΩ (10 mA) to 375 Ω (800 mA). ICHG = KISET / RISET. |
TS | 3 | I | Temperature qualification voltage input. Connect a negative temperature coefficient (NTC) thermistor directly from TS to GND (AT103-2 recommended). Charge suspends when the TS pin voltage is out of range. VOUT_OVP is reduced in cool region. If TS function is not needed, connect an external 10-kΩ resistor from this pin to GND. Pulling VTS < VTS_ENZ disables the charger. |
GND | 4 | – | Ground pin |
STAT | 5 | O | Open drain charge status indication output. Connect to the pullup rail via a 10-kΩ resistor. LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When a fault condition is detected, the STAT pin blinks at 1 Hz. |
TMR | 6 | I | Connect to a pulldown resistor to program charge safety timer duration. Valid resistor range is 3.6 kΩ to 36 kΩ. Refer to Section 7.3.1.2. |
VSET | 7 | I | Programs the number of series NiMH cells. Valid resistor range is 3.6 kΩ to 62 kΩ. Recommend using a ±1% tolerance resistor with <200 ppm/ºC temperature coefficient. Refer to Section 7.3.1.3. |
OUT | 8 | P | Battery connection. System load may be connected in parallel to the battery. Bypass OUT with a ≥1-μF capacitor to GND, placed close to the IC. |
Thermal Pad | — | — | Exposed pad beneath the IC for heat dissipation. Solder thermal pad to the board with vias connecting to solid GND plane. |