ZHCSQ82 September   2022 BQ25176M

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power Up from Input Source
        1. 7.3.1.1 ISET Pin Detection
        2. 7.3.1.2 VSET Pin Detection
        3. 7.3.1.3 Charger Power Up
      2. 7.3.2 Battery Charging Features
        1. 7.3.2.1 Lithium-Ion Battery Charging Profile
        2. 7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)
        3. 7.3.2.3 Charge Termination and Battery Recharge
      3. 7.3.3 Status Outputs ( PG, STAT)
        1. 7.3.3.1 Power Good Indicator (PG Pin)
        2. 7.3.3.2 Charging Status Indicator (STAT)
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Input Overvoltage Protection (VIN_OV)
        2. 7.3.4.2 Output Overvoltage Protection (VOUT_OVP)
        3. 7.3.4.3 Output Overcurrent Protection (IOUT_OCP)
        4. 7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown or Undervoltage Lockout (UVLO)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Standby Mode
      4. 7.4.4 Fault Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Li-Ion Charger Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 LiFePO4 Charger Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4.1 Shutdown or Undervoltage Lockout (UVLO)

The device is in the shutdown state if the IN pin voltage is less than VIN_LOWVor the BIAS pin is below VBIAS_ENZ. The internal circuitry is powered down, all the pins are high impedance, and the device draws ISD_IN_BIAS from the input supply. Once the IN voltage rises above the VIN_LOW threshold and the BIAS pin is above VBIAS_EN, the IC enters Sleep mode or Active mode depending on the OUT pin voltage.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |