ZHCSQ82 September   2022 BQ25176M

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power Up from Input Source
        1. 7.3.1.1 ISET Pin Detection
        2. 7.3.1.2 VSET Pin Detection
        3. 7.3.1.3 Charger Power Up
      2. 7.3.2 Battery Charging Features
        1. 7.3.2.1 Lithium-Ion Battery Charging Profile
        2. 7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)
        3. 7.3.2.3 Charge Termination and Battery Recharge
      3. 7.3.3 Status Outputs ( PG, STAT)
        1. 7.3.3.1 Power Good Indicator (PG Pin)
        2. 7.3.3.2 Charging Status Indicator (STAT)
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Input Overvoltage Protection (VIN_OV)
        2. 7.3.4.2 Output Overvoltage Protection (VOUT_OVP)
        3. 7.3.4.3 Output Overcurrent Protection (IOUT_OCP)
        4. 7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown or Undervoltage Lockout (UVLO)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Standby Mode
      4. 7.4.4 Fault Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Li-Ion Charger Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 LiFePO4 Charger Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

8.2.2.2 Detailed Design Procedure

The regulation voltage is set via the VSET pin to 3.6 V, the input voltage is 5 V and the charge current is programmed via the ISET pin to 100 mA.

RISET = [KISET / ICHG]
from electrical characteristics table. . . KISET = 300 AΩ
RISET = [300 AΩ/0.1 A] = 3 kΩ
Selecting the closest 1% resistor standard value, use a 3.01-kΩ resistor between ISET and GND, for an expected ICHG 99.67 mA.
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