ZHCSTK2 October   2023 BQ25185

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. 说明(续)
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Battery Charging Process
        1. 8.1.1.1 Trickle Charge
        2. 8.1.1.2 Pre-Charge
        3. 8.1.1.3 Fast Charge
        4. 8.1.1.4 ISET Pin Detection
        5. 8.1.1.5 Termination
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Based Dynamic Power Management (VINDPM)
      2. 8.3.2  Dynamic Power Path Management Mode (DPPM)
      3. 8.3.3  Battery Supplement Mode
      4. 8.3.4  Sleep Mode
      5. 8.3.5  SYS Regulation
      6. 8.3.6  ILIM/VSET Control
      7. 8.3.7  Protection Mechanisms
        1. 8.3.7.1 Input Overvoltage Protection
        2. 8.3.7.2 Battery Undervoltage Lockout
        3. 8.3.7.3 Battery Overcurrent Protection
        4. 8.3.7.4 System Overvoltage Protection
        5. 8.3.7.5 System Short Protection
        6. 8.3.7.6 Thermal Protection and Thermal Regulation
        7. 8.3.7.7 Safety Timer
      8. 8.3.8  Pushbutton Wake and Reset Input
        1. 8.3.8.1 Pushbutton Long Button Press Function - Factory mode
      9. 8.3.9  External NTC Monitoring (TS)
        1. 8.3.9.1 TS Biasing and Function
      10. 8.3.10 Status Pins
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Current and Battery Regulation Voltage - ILIM/VSET
        2. 9.2.2.2 Fast Charge Current- ISET
        3. 9.2.2.3 Recommended Passive Components
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

ISET Pin Detection

After valid VIN is plugged in and CE pin is pulled LOW, the device checks the resistor on the ISET pin for shortcircuit (RISET < RISET_SHORT). If the condition is detected, charger remains in the FAULT state until the input or CE pin are toggled. If the ISET pin is open-circuit, the charger will charge with very low charging current in the order of 1.5 mA. This pin is monitored while charging, and changes in RISET while the charger is operating will immediately translate to changes in charge current. An external pull-down resistor (±1% or better recommended to minimize charge current error) from ISET pin to GND sets the charge current as:

Equation 1. ICHG = (KISET) / (RISET)
  • ICHG is the desired fast charge current
  • KISET is a gain factor found in the electrical specification (typically 300 AΩ )
  • RISET is the pull-down resistor from ISET pin to GND

For charge currents below 50 mA, an extra RC circuit using a 50 pF capacitance is recommended on ISET to achieve more stable current signal. The ISET pin can also be used to monitor device current when the device is not in ICHG regulation. The voltage on the ISET pin is proportional to the device charging current. To measure the charge current when the device is charging, the following formula can be used:

Equation 2. ICHG=(KISET VISET) / (RISET)

  • VISET is the measured voltage at the ISET pin in volts.
  • ICHG is the calculated measured charge current