ZHCSTK2 October   2023 BQ25185

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. 说明(续)
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Battery Charging Process
        1. 8.1.1.1 Trickle Charge
        2. 8.1.1.2 Pre-Charge
        3. 8.1.1.3 Fast Charge
        4. 8.1.1.4 ISET Pin Detection
        5. 8.1.1.5 Termination
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Based Dynamic Power Management (VINDPM)
      2. 8.3.2  Dynamic Power Path Management Mode (DPPM)
      3. 8.3.3  Battery Supplement Mode
      4. 8.3.4  Sleep Mode
      5. 8.3.5  SYS Regulation
      6. 8.3.6  ILIM/VSET Control
      7. 8.3.7  Protection Mechanisms
        1. 8.3.7.1 Input Overvoltage Protection
        2. 8.3.7.2 Battery Undervoltage Lockout
        3. 8.3.7.3 Battery Overcurrent Protection
        4. 8.3.7.4 System Overvoltage Protection
        5. 8.3.7.5 System Short Protection
        6. 8.3.7.6 Thermal Protection and Thermal Regulation
        7. 8.3.7.7 Safety Timer
      8. 8.3.8  Pushbutton Wake and Reset Input
        1. 8.3.8.1 Pushbutton Long Button Press Function - Factory mode
      9. 8.3.9  External NTC Monitoring (TS)
        1. 8.3.9.1 TS Biasing and Function
      10. 8.3.10 Status Pins
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Current and Battery Regulation Voltage - ILIM/VSET
        2. 9.2.2.2 Fast Charge Current- ISET
        3. 9.2.2.3 Recommended Passive Components
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Electrical Characteristics

VIN = 5V, VBAT = 3.6V. -40°C < TJ < 125°C unless otherwise noted. Typical data at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENTS
IQ_IN Input supply quiescent current VBAT = 3.6V, VIN = 5V, Charge enabled, ICHG = 0mA, SYSREG = 4.5V 0.75 1 mA
ISLEEP_IN SLEEP input current VIN = 3.6V, VBAT = 3.7V 30 µA
IQ_BAT Battery quiescent current VIN <VUVLO , VBAT =3.6V, 0°C < TJ < 85°C 4 5 µA
IBAT_FACT Battery discharge current in Factory Mode VBAT = 3.6 V, 0°C < TJ < 85°C 3.2 5 µA
POWER-PATH MANAGEMENT AND INPUT
VIN_OP Input voltage operating range 3.6 18 V
VIN_UVLOZ Exit IN undervoltage lock-out IN rising 3 V
VIN_UVLO Enter IN undervoltage lock-out IN falling 2.7 V
VIN_LOWV IN voltage to start charging IN rising 3 3.15 V
VIN_LOWVZ IN voltage to stop charging IN falling 2.95 3.1 V
VIN_PORZ IN voltage threshold to enter Factory Mode IN falling 1.09 1.3 1.66 V
VSLEEPZ Exit sleep mode threshold IN rising, VIN - VBAT, VBAT= 4V, VINDPM_ACTIVE = 1 122 152 188 mV
VSLEEPZ Exit sleep mode threshold IN rising, VIN - VBAT, VBAT= 4V, VINDPM_ACTIVE = 0 168 208 262 mV
VSLEEP Enter sleep mode threshold IN falling, VIN - VBAT, VBAT= 4V, VINDPM_ACTIVE = 1 82 mV
VSLEEP Enter sleep mode threshold IN falling, VIN - VBAT, VBAT= 4V, VINDPM_ACTIVE = 0 82 mV
VSLEEP Enter sleep mode threshold IN falling, VIN - VBAT, VBAT = 4V 82 mV
VSLEEPZ Exit sleep mode threshold IN rising, VIN - VBAT, VBAT = 4V 168 208 262 mV
VIN_OVP VIN overvoltage rising threshold IN rising 18 18.5 19 V
VIN_OVP_HYS IN overvoltage hysteresis IN falling 500 mV
IBAT_OCP BATOCP (Reverse OCP only) VBAT = 4V 3.13 A
IBAT_OCPACC Battery OCP Accuracy IBAT= 3.125 A, TJ = 27C 18 %
VBSUP1 Enter supplement mode threshold VBAT = 3.6V, VBAT > VBUVLO, VSYS< VBAT-VBSUP1 40 mV
VBSUP2
Exit supplement mode threshold VBAT > VBUVLO, VSYS>VBAT-VBSUP2 20 mV
ILIM Input Current Limit VIN = 5V, ILIM=100 mA 80 90 98 mA
VIN = 5V, ILIM=500 mA 450 475 498 mA
VIN = 5V, ILIM=1050mA 995 1050 1100 mA
VINDPM Input voltage threshold when input current is reduced VBAT + VINDPM_TRACK V
VINDPM_TRACK Input voltage threshold offset for when input current is reduced and when VBAT > 3.5 V VINDPM taget = VBAT + VINDPM_TRACK 330 mV
VDPPM SYS voltage threshold when charge current is reduced VBAT = 3.6V, VSYS = VDPPM + VBAT before charge current is reduced.  0.1 V
VSYS_REG SYS Regulation Voltage VIN = 5V, VBATREG <= 4.3 V 4.5 V
VSYS_REG_ACC SYS Regulation Accuracy VIN = 5V, VBAT = 3.6V, RSYS = 100 ohm -2 2 %
VMINSYS Minimum SYS voltage when in battery tracking mode VBAT < 3.6V 3.8 V
RSYS_PD SYS pull down resistance VSYS = 3.6V 20 Ω
VSYS_SHORT Voltage threshold for detecting SYS_SHORT condition has occured 200mV hysteresis 1.6 V
BATTERY CHARGER
RON_BAT Battery FET on-resistance VBAT = 4.5V, IBAT = 400 mA 115 140
RON_IN Input FET on-resistance IN = 5V, IIN = 1A 330 470
VREG_RANGE Typical BAT charge voltage regulation range 3.6 4.4 V
VREG_ACC BAT charge voltage accuracy, summary for all settings All VBATREG settings, typical measurement at VBATREG = 4.2V –0.5 0.5 %
ICHG_RANGE Typical charge current regulation range VBAT > VLOWV 5 1000 mA
VISET ISET pin voltage when in regulation IBAT = ICHG 1 V
KISET Charge current setting factor, ICHG = KISET / RISET 10mA < ICHG < 1000mA 285 300 315
ICHG_ACC Charge current accuracy VIN = 5V, Fastcharge >=40mA –10 10 %
ICHG Charge current accuracy at 800 mA RISET = 375Ω, OUT = 3.8V  720 800 880 mA
Charge current accuracy at 500 mA RISET = 600Ω, OUT = 3.8V 450 500 550 mA
Charge current accuracy at 150 mA RISET = 2.0kΩ, OUT = 3.8V 135 150 165 mA
Charge current accuracy at 10 mA RISET = 30kΩ, OUT = 3.8V 9 10 11 mA
IPRECHG Typical pre-charge current, as percentage of ICHG VOUT < VLOWV 20 %
IPRECHG_ACC Precharge current accuracy Fastcharge current >=40mA –10 10 %
IPRECHG_ACC Precharge current accuracy at ICHG = 800 mA RISET = 375Ω, OUT = 2.5V 144 160 176 mA
IPRECHG_ACC Precharge current accuracy at ICHG = 500 mA RISET = 600Ω, OUT = 2.5V  90 100 110 mA
IPRECHG_ACC Precharge current accuracy at ICHG = 150 mA RISET = 2.0kΩ, OUT = 2.5V  26.5 30 34.5 mA
IPRECHG_ACC Precharge current accuracy at ICHG = 10 mA RISET = 30kΩ, OUT = 2.5V  1.6 2 2.4 mA
ITERM Typical termination current, as percentage of ICHG VOUT = VBATREG 10 %
ITERM_ACC Termination current accuracy IBAT = 3mA (ICHG= 30mA) Tj = 25°C –10 10 %
VLOWV Pre-charge to fast-charge transition threshold VBAT rising 2.9 3 3.1 V
VLOWV_HYS Battery LOWV hysteresis 100 mV
VBUVLO Battery UVLO, VBAT falling 3 V
VBUVLO_HYS Battery UVLO hysteresis, VBAT rising VIN = 5V 110 150 190 mV
VBUVLO_HYS Battery UVLO hysteresis, VBAT rising VIN = 0V  90 150 210 mV
VRCH Battery Recharge Threshold VIN = 5V, Charge Enabled, VBAT falling from VBATREG 100 mV
VBATSC Short on battery threshold for trickle charge, VBAT rising 1.6 1.8 2.0 V
VBATSC_HYS Battery short circuit voltage hysteresis 200 mV
IBATSC Trickle Charge Current  VBAT<VBATSC 7 mA
RISET_SHORT Resistor value considered short RISET below this range at startup, charger does not initiate charge, power cycle or /CE toggle to reset 264 Ω
TERMPERATURE REGULATION AND TEMPERATURE SHUTDOWN
TREG Typical junction temperature regulation 100 °C
TSHUT_RISING Thermal shutdown rising threshold Temperature increasing 150 °C
TSHUT_FALLING Thermal shutdown falling threshold Temperature decreasing 135 °C
BATTERY NTC MONITOR
VHOT_ENTRY High Temperature trip point Battery Charging, VTS/MR falling 0.1050 0.1150 0.1250 V
VCOLD_ENTRY Low Temperature trip point Battery Charging, VTS/MR rising 0.9575 1.0075 1.0575 V
VHOT_EXIT Hysteresis on high trip point Battery Charging, VTS/MR rising from VHOT_ENTRY 0.1250 0.1350 0.1450 V
VCOLD_EXIT Hysteresis on low trip point Battery Charging, VTS/MR falling from VCOLD_ENTRY 0.7775 0.8200 0.8600 V
PUSH BUTTON TIMERS AND THRESHOLDS
ITSMR Adapter present  36.5 38 39.5 µA
VTSMR TSMR voltage to detect a button press event, adapter present  90 mV
tLPRESS Long Press timer. Time from button press detection to long press action. 10 s
BATTERY CHARGING TIMERS
tMAXCHG Charge safety timer 720 min
tPRECHG Precharge safety timer 0.25 * tMAXCHG
LOGIC PINS
VIL Input low threshold level VPULLUP = 1.8V, /CE pin 0.4 V
VIH Input high threshold level VPULLUP = 1.8V, /CE pin 1.3 V
VOL Output low threshold level IL = 5mA, sink current, VPULLUP =3.3V, STAT1, STAT2 pins 0.4 V
ILKG High-Level leakage current VPULLUP = 3.3V,  STAT1, STAT2 pins 1 µA