ZHCSMH4A march   2020  – november 2020 BQ25306

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Device Power Up
        1. 9.3.1.1 Power-On-Reset (POR)
        2. 9.3.1.2 REGN Regulator Power Up
        3. 9.3.1.3 Charger Power Up
        4. 9.3.1.4 Charger Enable and Disable by EN Pin
        5. 9.3.1.5 Device Unplugged from Input Source
      2. 9.3.2 Battery Charging Management
        1. 9.3.2.1 Battery Charging Profile
        2. 9.3.2.2 Precharge
        3. 9.3.2.3 Charging Termination
        4. 9.3.2.4 Battery Recharge
        5. 9.3.2.5 Charging Safety Timer
        6. 9.3.2.6 Thermistor Temperature Monitoring
      3. 9.3.3 Charging Status Indicator (STAT)
      4. 9.3.4 Protections
        1. 9.3.4.1 Voltage and Current Monitoring
          1. 9.3.4.1.1 Input Over-Voltage Protection
          2. 9.3.4.1.2 Input Voltage Dynamic Power Management (VINDPM)
          3. 9.3.4.1.3 Input Current Limit
          4. 9.3.4.1.4 Cycle-by-Cycle Current Limit
        2. 9.3.4.2 Thermal Regulation and Thermal Shutdown
        3. 9.3.4.3 Battery Protection
          1. 9.3.4.3.1 Battery Over-Voltage Protection (VBAT_OVP)
          2. 9.3.4.3.2 Battery Short Circuit Protection
        4. 9.3.4.4 ICHG Pin Open and Short Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Mode, HiZ Mode, Sleep Mode, Charge Mode, Termination Mode, and Fault Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Typical Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Charge Voltage Settings
          2. 10.2.1.2.2 Charge Current Setting
          3. 10.2.1.2.3 Inductor Selection
          4. 10.2.1.2.4 Input Capacitor
          5. 10.2.1.2.5 Output Capacitor
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Typical Application with External Power Path
        1. 10.2.2.1 Design Requirements
      3. 10.2.3 Typical Application with MCU Programmable Charge Current
        1. 10.2.3.1 Design Requirements
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
9.3.4.1.4 Cycle-by-Cycle Current Limit

High-side (HS) FET current is cycle-by-cycle limited. Once the HSFET peak current hits the limit IHSFET_OCP, the HSFET shuts down until the current is reduced below a threshold.
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