ZHCSBK4G March   2013  – March 2019

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用原理图
      2.      充电器效率与输入电压
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Maximum Power Point Tracking
      2. 7.3.2 Battery Undervoltage Protection
      3. 7.3.3 Battery Overvoltage Protection
      4. 7.3.4 Battery Voltage within Operating Range (VBAT_OK Output)
      5. 7.3.5 Storage Element / Battery Management
      6. 7.3.6 Programming OUT Regulation Voltage
      7. 7.3.7 Step Down (Buck) Converter
      8. 7.3.8 Nano-Power Management and Efficiency
    4. 7.4 Device Functional Modes
      1. 7.4.1 Main Boost Charger Disabled (Ship Mode) - (VSTOR > VSTOR_CHGEN and EN = HIGH)
      2. 7.4.2 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS), EN = don't care)
      3. 7.4.3 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN and EN = LOW )
        1. 7.4.3.1 Buck Converter Enabled (VSTOR > VBAT_UV, EN = LOW and VOUT_EN = HIGH )
      4. 7.4.4 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Energy Harvester Selection
      2. 8.1.2 Storage Element Selection
      3. 8.1.3 Inductor Selection
        1. 8.1.3.1 Boost Charger Inductor Selection
        2. 8.1.3.2 Buck Converter Inductor Selection
      4. 8.1.4 Capacitor Selection
        1. 8.1.4.1 VREF_SAMP Capacitance
        2. 8.1.4.2 VIN_DC Capacitance
        3. 8.1.4.3 VSTOR Capacitance
        4. 8.1.4.4 VOUT Capacitance
        5. 8.1.4.5 Additional Capacitance on VSTOR or VBAT
    2. 8.2 Typical Applications
      1. 8.2.1 Solar Application Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 TEG Application Circuit
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
      3. 8.2.3 Piezoelectric Application Circuit
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VSTOR = 4.2 V, VOUT = 1.8 V. External components, CIN = 4.7 µF, L1 = 22 µH, CSTOR = 4.7 µF, L2 = 10 µH, COUT = 22 µF
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BOOST CHARGER
VIN(DC) DC input voltage into VIN_DC Cold-start completed 100 5100 mV
ICHG(CBC_LIM) Cycle-by-cycle current limit of charger 0.5V < VIN < 4.0 V; VSTOR = 4.2 V 230 285 mA
PIN Input power range for normal charging VBAT_OV > VSTOR > VSTOR_CHGEN 0.005 510 mW
VIN(CS) Minimum input voltage for cold start circuit to start charging VSTOR VBAT < VBAT_UV; VSTOR = 0 V; 0°C < TA < 85°C 600 700 mV
VSTOR(CHGEN) Voltage on VSTOR when cold start operation ends and normal charger operation commences 1.6 1.73 1.9 V
PIN(CS) Minimum cold-start input power for VSTOR to reach VSTOR(CHGEN) and allow normal charging to commence VSTOR < VSTOR(CHGEN)
VIN_DC clamped to VIN(CS) by cold start circuit
VBAT = 100 µF 		15 µW
tBAT_HOT_PLUG  Time for which switch between VSTOR and VBAT closes when battery is hot plugged into VBAT  Battery resistance = 300 Ω, Battery voltage = 3.3V  50 ms
QUIESCENT CURRENTS
IQ EN = 0, VOUT_EN = 1 - Full operating mode VIN_DC = 0V; VSTOR = 2.1V; TJ = 25°C 488 700 nA
VIN_DC = 0V; VSTOR = 2.1V; –40°C < TJ < 85°C 900
EN = 0, VOUT_EN = 0 - Partial standby mode VIN_DC = 0V; VSTOR = 2.1V; TJ = 25°C 445 615
VIN_DC = 0V; VSTOR = 2.1V; –40°C < TJ < 85°C 815
EN = 1, VOUT_EN = x - Ship mode VBAT = 2.1 V; TJ = 25°C; VSTOR = VIN_DC = 0 V 1 5
VBAT = 2.1 V; –40°C < TJ < 85°C; VSTOR = VIN_DC = 0 V 30
MOSFET RESISTANCES
RDS(ON)-BAT  ON resistance of switch between VBAT and VSTOR VBAT = 4.2 V 0.95 1.50 Ω
RDS(ON)_CHG Charger low side switch ON resistance VBAT = 4.2 V 0.70 0.90 Ω
Charger high side switch ON resistance 2.30 3.00
Charger low side switch ON resistance VBAT = 2.1 V 0.80 1.00
Charger high side switch ON resistance 3.70 4.80
RDS(ON)_BUCK Buck low side switch ON resistance VBAT = 4.2 V 0.80 1.00 Ω
Buck high side switch ON resistance 1.60 2.00
Buck low side switch ON resistance VBAT = 2.1 V 1.00 1.20
Buck high side switch ON resistance 2.40 2.90
fSW_CHG  Maximum charger switching frequency 1 MHz
fSW_BUCK Maximum buck switching frequency 500 kHz
TTEMP_SD  Junction temperature when charging is discontinued VBAT_OV > VSTOR > 1.8V 125 C
BATTERY MANAGEMENT
VBAT_OV  Programmable voltage range for overvoltage threshold VBAT increasing 2.2  5.5 V
VBAT_OV_HYST Battery over-voltage hysteresis (internal) VBAT decreasing; VBAT_OV = 5.25V    24 55 mV
VDELTA VBAT_OV - VIN(DC) Main boost charger on; MPPT not sampling VOC 400 mV
VBAT_UV Under-voltage threshold VBAT decreasing 1.91 1.95 2.0 V
VBAT_UV_HYST Battery under-voltage hysteresis (internal) VBAT increasing 15 32 mV
VBAT_OK_HYST Programmable voltage range of digital signal indicating VSTOR (=VBAT) is OK VBAT increasing VBAT_UV VBAT_OV V
VBAT_OK_PROG  Programmable voltage range of digital signal indicating VSTOR (=VBAT) is OK VBAT decreasing VBAT_UV VBAT_OK_HYST – 50 mV
VBAT_ACCURACY Overall Accuracy for threshold values VBAT_OV, VBAT_OK Selected resistors are 0.1% tolerance -2% 2%
VBAT_OK(H) VBAT_OK (High) threshold voltage Load = 10 µA VSTOR – 200 mV
VBAT_OK(L) VBAT_OK (Low) threshold voltage Load = 10 µA 100 mV
ENABLE THRESHOLDS
EN(H) Voltage for EN high setting. Relative to VBAT. VBAT = 4.2V VBAT – 0.2 V
EN(L) Voltage for EN low setting VBAT = 4.2V 0.3 V
VOUT_EN(H) Voltage for VOUT_EN High setting. VSTOR = 4.2V VSTOR – 0.4 V
VOUT_EN(L) Voltage for VOUT_EN Low setting. VSTOR = 4.2V 0.3 V
BIAS and MPPT CONTROL STAGE
VOC_SAMPLE Time period between two MPPT samples 16 s
VOC_STLG Settling time for MPPT sample measurement of VIN_DC open circuit voltage Device not switching 256 ms
VIN_REG Regulation of VIN_DC during charging 0.5 V < VIN < 4 V; IIN(DC) = 10 mA 10%
MPPT_80 Voltage on VOC_SAMP to set MPPT threshold to 0.80 of open circuit voltage of VIN_DC VSTOR – 0.015 V
MPPT_50 Voltage on VOC_SAMP to set MPPT threshold to 0.50 of open circuit voltage of VIN_DC 15 mV
VBIAS Internal reference for the programmable voltage thresholds VSTOR ≥ VSTOR_CHGEN 1.205  1.21  1.217 V
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