8.1.4.5 Additional Capacitance on VSTOR or VBAT

If there are large, fast system load transients and/or the storage element has high resistance, then the CSTOR capacitors may momentarily discharge below the VBAT_UV threshold in response to the transient. This causes the bq25570 to turn off the PFET switch between VSTOR and VBAT and turn on the boost charger. The CSTOR capacitors may further discharge below the VSTOR_CHGEN threshold and cause the bq25570 to enter Cold Start. For instance, some Li-ion batteries or thin-film batteries may not have the current capacity to meet the surge current requirements of an attached low power radio. To prevent VSTOR from drooping, either increasing the CSTOR capacitance or adding additional capacitance in parallel with the storage element is recommended. For example, if boost charger is configured to charge the storage element to 4.2 V and a 500 mA load transient of 50 µs duration infrequently occurs, then, solving I = C x dv/dt for CSTOR gives :

Equation 11.

Note that increasing CSTOR is the recommended solution but will cause the boost charger to operate in the less efficient cold start mode for a longer period at startup compared to using CSTOR = 4.7 µF. If longer cold start run times are not acceptable, then place the additional capacitance in parallel with the storage element.