ZHCSBK4G
March 2013 – March 2019
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
典型应用原理图
充电器效率与输入电压
4
修订历史记录
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Electrical Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Maximum Power Point Tracking
7.3.2
Battery Undervoltage Protection
7.3.3
Battery Overvoltage Protection
7.3.4
Battery Voltage within Operating Range (VBAT_OK Output)
7.3.5
Storage Element / Battery Management
7.3.6
Programming OUT Regulation Voltage
7.3.7
Step Down (Buck) Converter
7.3.8
Nano-Power Management and Efficiency
7.4
Device Functional Modes
7.4.1
Main Boost Charger Disabled (Ship Mode) - (VSTOR > VSTOR_CHGEN and EN = HIGH)
7.4.2
Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS), EN = don't care)
7.4.3
Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN and EN = LOW )
7.4.3.1
Buck Converter Enabled (VSTOR > VBAT_UV, EN = LOW and VOUT_EN = HIGH )
7.4.4
Thermal Shutdown
8
Application and Implementation
8.1
Application Information
8.1.1
Energy Harvester Selection
8.1.2
Storage Element Selection
8.1.3
Inductor Selection
8.1.3.1
Boost Charger Inductor Selection
8.1.3.2
Buck Converter Inductor Selection
8.1.4
Capacitor Selection
8.1.4.1
VREF_SAMP Capacitance
8.1.4.2
VIN_DC Capacitance
8.1.4.3
VSTOR Capacitance
8.1.4.4
VOUT Capacitance
8.1.4.5
Additional Capacitance on VSTOR or VBAT
8.2
Typical Applications
8.2.1
Solar Application Circuit
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.3
Application Curves
8.2.2
TEG Application Circuit
8.2.2.1
Design Requirements
8.2.2.2
Detailed Design Procedure
8.2.2.3
Application Curves
8.2.3
Piezoelectric Application Circuit
8.2.3.1
Design Requirements
8.2.3.2
Detailed Design Procedure
8.2.3.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
10.3
Thermal Considerations
11
器件和文档支持
11.1
器件支持
11.1.1
第三方米6体育平台手机版_好二三四免责声明
11.2
文档支持
11.2.1
相关文档
11.3
接收文档更新通知
11.4
社区资源
11.5
商标
11.6
静电放电警告
11.7
术语表
12
机械、封装和可订购信息
封装选项
机械数据 (封装 | 引脚)
RGR|20
MPQF239A
散热焊盘机械数据 (封装 | 引脚)
RGR|20
QFND242E
订购信息
zhcsbk4g_oa
zhcsbk4g_pm
6.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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