ZHCSGA3A march 2017 – march 2023 BQ25601
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 说明（续）
- 6 Device Comparison Table
- 7 Pin Configuration and Functions
- 8 Specifications
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Power-On-Reset (POR)
- 9.3.2 Device Power Up from Battery without Input Source
- 9.3.3 Power Up from Input Source
- 9.3.4 Boost Mode Operation From Battery
- 9.3.5 Host Mode and Standalone Power Management
- 9.3.6 Power Path Management
- 9.3.7 Battery Charging Management
- 9.3.8 Protections
- 9.4 Device Functional Modes
- 9.5 Programming
- 9.6 Register Maps
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
9.4.3 Supplement Mode
When the system voltage falls below the battery voltage, the BATFET turns on and the BATFET gate is regulated so that the minimum BATFET VDS stays at 30 mV when the current is low. This prevents oscillation from entering and exiting the supplement mode.
As the discharge current increases, the BATFET gate is regulated with a higher voltage to reduce RDSON until the BATFET is in full conduction. At this point onwards, the BATFET VDS linearly increases with discharge current. Figure 9-9 shows the V-I curve of the BATFET gate regulation operation. BATFET turns off to exit supplement mode when the battery is below battery depletion threshold.
Figure 9-9 BAFET V-I
Curve