SLUSEC9B October   2020  – July 2024 BQ25618E , BQ25619E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-On-Reset (POR)
      2. 8.3.2 Device Power Up From Battery Without Input Source
      3. 8.3.3 Power Up From Input Source
        1. 8.3.3.1 Power Up REGN LDO
        2. 8.3.3.2 Poor Source Qualification
        3. 8.3.3.3 Input Source Type Detection (IINDPM Threshold)
          1. 8.3.3.3.1 PSEL Pins Sets Input Current Limit
        4. 8.3.3.4 Input Voltage Limit Threshold Setting (VINDPM Threshold)
        5. 8.3.3.5 Power Up Converter in Buck Mode
        6. 8.3.3.6 HIZ Mode with Adapter Present
      4. 8.3.4 Power Path Management
        1. 8.3.4.1 Narrow Voltage DC (NVDC) Architecture
        2. 8.3.4.2 Dynamic Power Management
        3. 8.3.4.3 Supplement Mode
      5. 8.3.5 Battery Charging Management
        1. 8.3.5.1 Autonomous Charging Cycle
        2. 8.3.5.2 Battery Charging Profile
        3. 8.3.5.3 Charging Termination
        4. 8.3.5.4 Thermistor Qualification
          1. 8.3.5.4.1 JEITA Guideline Compliance During Charging Mode
        5. 8.3.5.5 Charging Safety Timer
      6. 8.3.6 Ship Mode and QON Pin
        1. 8.3.6.1 BATFET Disable (Enter Ship Mode)
        2. 8.3.6.2 BATFET Enable (Exit Ship Mode)
        3. 8.3.6.3 BATFET Full System Reset
      7. 8.3.7 Status Outputs ( STAT, INT , PG )
        1. 8.3.7.1 Power Good Indicator (PG_STAT Bit; BQ25619E only)
        2. 8.3.7.2 Charging Status Indicator (STAT)
        3. 8.3.7.3 Interrupt to Host ( INT)
      8. 8.3.8 Protections
        1. 8.3.8.1 Voltage and Current Monitoring in Buck Mode
          1. 8.3.8.1.1 Input Overvoltage Protection (ACOV)
          2. 8.3.8.1.2 System Overvoltage Protection (SYSOVP)
        2. 8.3.8.2 Thermal Regulation and Thermal Shutdown
          1. 8.3.8.2.1 Thermal Protection in Buck Mode
        3. 8.3.8.3 Battery Protection
          1. 8.3.8.3.1 Battery Overvoltage Protection (BATOVP)
          2. 8.3.8.3.2 Battery Overdischarge Protection
          3. 8.3.8.3.3 System Overcurrent Protection
      9. 8.3.9 Serial Interface
        1. 8.3.9.1 Data Validity
        2. 8.3.9.2 START and STOP Conditions
        3. 8.3.9.3 Byte Format
        4. 8.3.9.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 8.3.9.5 Slave Address and Data Direction Bit
        6. 8.3.9.6 Single Read and Write
        7. 8.3.9.7 Multi-Read and Multi-Write
    4. 8.4 Device Functional Modes
      1. 8.4.1 Host Mode and Default Mode
    5. 8.5 Register Maps
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input Capacitor and Resistor
        3. 9.2.2.3 Output Capacitor
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RTW|24
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Typical Characteristics

BQ25618E BQ25619E Charge Efficiency
BQ25619EVM VBAT = 3.8 V Inductor 2.2 µH, DCR = 40 mΩ
Figure 7-1 Charge Efficiency
BQ25618E BQ25619E Charge Current Accuracy
Figure 7-3 Charge Current Accuracy
BQ25618E BQ25619E Charge Current vs Junction Temperature
Figure 7-5 Charge Current vs Junction Temperature
BQ25618E BQ25619E SYSMIN Voltage vs Junction Temperature (VSYS set at 3.5 V)
Figure 7-7 SYSMIN Voltage vs Junction Temperature (VSYS set at 3.5 V)

BQ25618E BQ25619E Charge Efficiency

BQ25618EVM VBAT = 3.8 V Inductor 1.0 µH, DCR = 27 mΩ
Figure 7-2 Charge Efficiency
BQ25618E BQ25619E Battery Charge Voltage vs Junction Temperature
Figure 7-4 Battery Charge Voltage vs Junction Temperature
BQ25618E BQ25619E VINDPM vs Junction Temperature
Figure 7-6 VINDPM vs Junction Temperature
BQ25618E BQ25619E Input Current Limit vs Junction Temperature
Figure 7-8 Input Current Limit vs Junction Temperature
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