ZHCSN83A june   2020  – january 2021 BQ25731

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics(BQ25731)
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up Sequence
      2. 9.3.2  Two-Level Battery Discharge Current Limit
      3. 9.3.3  Fast Role Swap Feature
      4. 9.3.4  CHRG_OK Indicator
      5. 9.3.5  Input and Charge Current Sensing
      6. 9.3.6  Input Voltage and Current Limit Setup
      7. 9.3.7  Battery Cell Configuration
      8. 9.3.8  Device HIZ State
      9. 9.3.9  USB On-The-Go (OTG)
      10. 9.3.10 Converter Operation
      11. 9.3.11 Inductance Detection Through IADPT Pin
      12. 9.3.12 Converter Compensation
      13. 9.3.13 Continuous Conduction Mode (CCM)
      14. 9.3.14 Pulse Frequency Modulation (PFM)
      15. 9.3.15 Switching Frequency and Dithering Feature
      16. 9.3.16 Current and Power Monitor
        1. 9.3.16.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.16.2 High-Accuracy Power Sense Amplifier (PSYS)
      17. 9.3.17 Input Source Dynamic Power Management
      18. 9.3.18 Input Current Optimizer (ICO)
      19. 9.3.19 Two-Level Adapter Current Limit (Peak Power Mode)
      20. 9.3.20 Processor Hot Indication
        1. 9.3.20.1 PROCHOT During Low Power Mode
        2. 9.3.20.2 PROCHOT Status
      21. 9.3.21 Device Protection
        1. 9.3.21.1 Watchdog Timer
        2. 9.3.21.2 Input Overvoltage Protection (ACOV)
        3. 9.3.21.3 Input Overcurrent Protection (ACOC)
        4. 9.3.21.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.21.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.21.6 Battery Discharge Overcurrent Protection (BATOC)
        7. 9.3.21.7 Battery Short Protection (BATSP)
        8. 9.3.21.8 System Undervoltage Lockout (VSYS_UVP)
        9. 9.3.21.9 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)-Patented Technology
    5. 9.5 Programming
      1. 9.5.1 I2C Serial Interface
        1. 9.5.1.1 Timing Diagrams
        2. 9.5.1.2 Data Validity
        3. 9.5.1.3 START and STOP Conditions
        4. 9.5.1.4 Byte Format
        5. 9.5.1.5 Acknowledge (ACK) and Not Acknowledge (NACK)
        6. 9.5.1.6 Target Address and Data Direction Bit
        7. 9.5.1.7 Single Read and Write
        8. 9.5.1.8 Multi-Read and Multi-Write
        9. 9.5.1.9 Write 2-Byte I2C Commands
    6. 9.6 Register Map
      1. 9.6.1  ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
      2. 9.6.2  ChargeCurrent Register (I2C address = 03/02h) [reset = 0080h]
        1. 9.6.2.1 Battery Low Voltage Current Clamp
      3. 9.6.3  ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
      4. 9.6.4  ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
      5. 9.6.5  ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
      6. 9.6.6  IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
      7. 9.6.7  ADCVBUS/PSYS Register (I2C address = 27/26h)
      8. 9.6.8  ADCIBAT Register (I2C address = 29/28h)
      9. 9.6.9  ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
      10. 9.6.10 ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
      11. 9.6.11 ChargeOption1 Register (I2C address = 31/30h) [reset = 3F00h]
      12. 9.6.12 ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
      13. 9.6.13 ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
      14. 9.6.14 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~5s) 4A09(1S)]
      15. 9.6.15 ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
      16. 9.6.16 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
      17. 9.6.17 ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
      18. 9.6.18 Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~5s)/0004h(1S)]
      19. 9.6.19 OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
      20. 9.6.20 OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
      21. 9.6.21 InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
      22. 9.6.22 IIN_HOST Register (I2C address = 0F/0Eh) [reset = 2000h]
      23. 9.6.23 ID Registers
        1. 9.6.23.1 ManufactureID Register (I2C address = 2Eh) [reset = 40h]
        2. 9.6.23.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = D6h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Input Snubber and Filter for Voltage Spike Damping
        2. 10.2.2.2 ACP-ACN Input Filter
        3. 10.2.2.3 Inductor Selection
        4. 10.2.2.4 Input Capacitor
        5. 10.2.2.5 Output Capacitor
        6. 10.2.2.6 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 静电放电警告
    6. 13.6 术语表
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.4.3 Pass Through Mode (PTM)-Patented Technology

The charger can be operated in the pass through mode (PTM) to improve efficiency. In PTM, the Buck and Boost high-side FETs (Q1 and Q4) are both turned on, while the Buck and Boost low-side FETs are both turned off. The input power is directly passed through the charger to the system. The switching losses of MOSFETs and the inductor core loss are saved. The charger quiescent current under PTM mode is also minimized to further increase light load efficiency. Charger will be transition from normal Buck-Boost operation to PTM operation by setting EN_PTM = 1b; and will transition out of PTM mode with host control by setting EN_PTM =0b. Please contact factory for more detail information about PTM mode.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |