ZHCSNY0B May   2020  – January 2023 BQ25798

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Device Power-On-Reset
      2. 9.3.2  PROG Pin Configuration
      3. 9.3.3  Device Power Up from Battery without Input Source
      4. 9.3.4  Device Power Up from Input Source
        1. 9.3.4.1 Power Up REGN LDO
        2. 9.3.4.2 Poor Source Qualification
        3. 9.3.4.3 ILIM_HIZ Pin
        4. 9.3.4.4 Default VINDPM Setting
        5. 9.3.4.5 Input Source Type Detection
          1. 9.3.4.5.1 D+/D– Detection Sets Input Current Limit
          2. 9.3.4.5.2 HVDCP Detection Procedure
          3. 9.3.4.5.3 Connector Fault Detection
      5. 9.3.5  Dual-Input Power Mux
        1. 9.3.5.1 ACDRV Turn On Condition
        2. 9.3.5.2 VBUS Input Only
        3. 9.3.5.3 One ACFET-RBFET
        4. 9.3.5.4 Two ACFETs-RBFETs
      6. 9.3.6  Buck-Boost Converter Operation
        1. 9.3.6.1 Force Input Current Limit Detection
        2. 9.3.6.2 Input Current Optimizer (ICO)
        3. 9.3.6.3 Maximum Power Point Tracking for Small PV Panel
        4. 9.3.6.4 Pulse Frequency Modulation (PFM)
        5. 9.3.6.5 Device HIZ State
      7. 9.3.7  USB On-The-Go (OTG)
        1. 9.3.7.1 OTG Mode to Power External Devices
        2. 9.3.7.2 Backup Power Supply Mode
        3. 9.3.7.3 Backup Mode with Dual Input Mux
      8. 9.3.8  Power Path Management
        1. 9.3.8.1 Narrow VDC Architecture
        2. 9.3.8.2 Dynamic Power Management
      9. 9.3.9  Battery Charging Management
        1. 9.3.9.1 Autonomous Charging Cycle
        2. 9.3.9.2 Battery Charging Profile
        3. 9.3.9.3 Charging Termination
        4. 9.3.9.4 Charging Safety Timer
        5. 9.3.9.5 Thermistor Qualification
          1. 9.3.9.5.1 JEITA Guideline Compliance in Charge Mode
          2. 9.3.9.5.2 Cold/Hot Temperature Window in OTG Mode
      10. 9.3.10 Integrated 16-Bit ADC for Monitoring
      11. 9.3.11 Status Outputs ( STAT, and INT)
        1. 9.3.11.1 Charging Status Indicator (STAT Pin)
        2. 9.3.11.2 Interrupt to Host ( INT)
      12. 9.3.12 Ship FET Control
        1. 9.3.12.1 Shutdown Mode
        2. 9.3.12.2 Ship Mode
        3. 9.3.12.3 System Power Reset
      13. 9.3.13 Protections
        1. 9.3.13.1 Voltage and Current Monitoring
          1. 9.3.13.1.1  VAC Over-voltage Protection (VAC_OVP)
          2. 9.3.13.1.2  VBUS Over-voltage Protection (VBUS_OVP)
          3. 9.3.13.1.3  VBUS Under-voltage Protection (POORSRC)
          4. 9.3.13.1.4  System Over-voltage Protection (VSYS_OVP)
          5. 9.3.13.1.5  System Short Protection (VSYS_SHORT)
          6. 9.3.13.1.6  Battery Over-voltage Protection (VBAT_OVP)
          7. 9.3.13.1.7  Battery Over-current Protection (IBAT_OCP)
          8. 9.3.13.1.8  Input Over-current Protection (IBUS_OCP)
          9. 9.3.13.1.9  OTG Over-voltage Protection (OTG_OVP)
          10. 9.3.13.1.10 OTG Under-voltage Protection (OTG_UVP)
        2. 9.3.13.2 Thermal Regulation and Thermal Shutdown
      14. 9.3.14 Serial Interface
        1. 9.3.14.1 Data Validity
        2. 9.3.14.2 START and STOP Conditions
        3. 9.3.14.3 Byte Format
        4. 9.3.14.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 9.3.14.5 Target Address and Data Direction Bit
        6. 9.3.14.6 Single Write and Read
        7. 9.3.14.7 Multi-Write and Multi-Read
    4. 9.4 Device Functional Modes
      1. 9.4.1 Host Mode and Default Mode
      2. 9.4.2 Register Bit Reset
    5. 9.5 Register Map
      1. 9.5.1 I2C Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 PV Panel Selection
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Input (VBUS / PMID) Capacitor
        4. 10.2.2.4 Output (VSYS) Capacitor
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Battery Charging Profile

The device charges the battery in five phases: trickle charge, pre-charge, constant current, constant voltage, and top-off trickle charging (optional). At the beginning of a charging cycle, the device checks the battery voltage and regulates current/voltage accordingly.

Table 9-10 Default Charging Current Setting
VBAT CHARGING CURRENT REGISTER DEFAULT SETTING CHRG_STAT
< VBAT_SHORT IBAT_SHORT 100 mA (fixed value) 001
VBAT_SHORTZ to VBAT_LOWV IPRECHG 120 mA 010
> VBAT_LOWV ICHG 1 A 011

If the charger is in DPM regulation or thermal regulation during charging, the actual charging current is less than the programmed value. In this case, termination is temporarily disabled and the charging safety timer is counted at half the clock rate, as explained in GUID-68705BC8-F1E0-41D7-AE02-1C4CAA98EA77.html.

During SYSMIN regulation with BATFET LDO operation, the charge current is limited to 2 A maximum, regardless of the charge current register setting being set higher than 2 A, in order to protect the BATFET. It is not recommended to set the battery regulation voltage lower than the SYSMIN regulation voltage. The BATFET LDO operation can be disabled by setting DIS_LDO = 1. In this state, charge current is regulated according to #GUID-9EDEEE87-AD91-4421-888C-DD5DCE3C4139/T4885767-79 and SYS voltage is V(BAT) plus the IR drop through the BATFET, regardless of battery voltage. No VSYSMIN is maintained. Note that, when in trickle charge, setting DIS_LDO = 1 does not affect IBAT_SHORT.

VBAT_SHORTZ is the battery voltage threshold for transition from trickle charge to precharge, which is fixed at 2.25V typical. During the trickle charge to precharge transition, the charger regulates the battery voltage to 2.5V/cell typical for tBAT_SHORTZ duration. VBAT_LOWV is the battery voltage threshold for the transition from precharge to fast charge. It is defined as a ratio of battery voltage regulation limit (VREG).

GUID-8A10BD4D-CF7B-4993-9F2B-69A2DB547AD3-low.gif Figure 9-10 Battery Charging Profile