ZHCSDX5C July 2015 – October 2022 BQ25895M
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| QUIESCENT CURRENTS | |||||||
| IBAT | Battery discharge current (BAT, SW, SYS) in buck mode | VBAT = 4.2 V, V(VBUS) < V(UVLO), leakage between BAT and VBUS | 5 | µA | |||
| High-Z mode, no VBUS, BATFET disabled (REG09[5]=1), battery monitor disabled, TJ < 85°C | 12 | 23 | µA | ||||
| High-Z mode, no VBUS, BATFET enabled (REG09[5]=0), battery monitor disabled, TJ < 85°C | 32 | 60 | µA | ||||
| I(VBUS_HIZ) | Input supply current (VBUS) in buck mode when High-Z mode is enabled | V(VBUS)= 5 V, High-Z mode, no battery, battery monitor disabled | 15 | 35 | µA | ||
| V(VBUS)= 12 V, High-Z mode, no battery, battery monitor disabled | 25 | 50 | µA | ||||
| I(VBUS) | Input supply current (VBUS) in buck mode | VBUS > V(UVLO), VBUS > VBAT, converter not switching | 1.5 | 3 | mA | ||
| VBUS > V(UVLO), VBUS > VBAT, converter switching, VBAT = 3.2 V, ISYS = 0A | 3 | mA | |||||
| VBUS > V(UVLO), VBUS > VBAT, converter switching, VBAT = 3.8 V, ISYS = 0 A | 3 | mA | |||||
| I(BOOST) | Battery discharge current in boost mode | VBAT = 4.2 V, boost mode, I(VBUS)= 0 A, converter switching, PFM_OTG_DIS=0 | 3 | mA | |||
| VBAT = 4.2 V, boost mode, I(VBUS)= 0 A, converter switching, PFM_OTG_DIS=1 | 15 | mA | |||||
| VBUS/BAT POWER UP | |||||||
| V(VBUS_OP) | VBUS operating range | 3.9 | 14 | V | |||
| V(VBUS_UVLOZ) | VBUS for active I2C, no battery | 3.6 | V | ||||
| V(SLEEP) | Sleep mode falling threshold | 25 | 65 | 120 | mV | ||
| V(SLEEPZ) | Sleep mode rising threshold | 130 | 250 | 370 | mV | ||
| V(ACOV) | VBUS over-voltage rising threshold | 14 | 14.6 | V | |||
| VBUS over-voltage falling threshold | 13.5 | 14 | V | ||||
| VBAT(UVLOZ) | Battery for active I2C, no VBUS | 2.3 | V | ||||
| VBAT(DPL) | Battery depletion falling threshold | 2.15 | 2.5 | V | |||
| VBAT(DPLZ) | Battery depletion rising threshold | 2.35 | 2.7 | V | |||
| V(VBUSMIN) | Bad adapter detection threshold | 3.8 | V | ||||
| I(BADSRC) | Bad adapter detection current source | 30 | mA | ||||
| POWER-PATH MANAGEMENT | |||||||
| VSYS | Typical system regulation voltage | I(SYS) = 0 A, VBAT> VSYS(MIN), BATFET Disabled (REG09[5]=1) | VBAT+ 50 mV | V | |||
| I(SYS) = 0 A, VBAT< VSYS(MIN), BATFET Disabled (REG09[5]=1) | VSYS(MIN) + 150 mV | V | |||||
| VSYS(MIN) | Minimum DC system voltage output | VBAT< VSYS(MIN), SYS_MIN = 3.5 V (REG03[3:1]=101), ISYS= 0 A | 3.50 | 3.65 | V | ||
| VSYS(MAX) | Maximum DC system voltage output | VBAT = 4.35 V, SYS_MIN = 3.5V (REG03[3:1]=101), ISYS= 0 A | 4.40 | 4.42 | V | ||
| RON(RBFET) | Top reverse blocking MOSFET(RBFET) on-resistance between VBUS and PMID | TJ = –40°C to +85°C | 27 | 38 | mΩ | ||
| TJ = –40°C to +125°C | 27 | 44 | mΩ | ||||
| RON(HSFET) | Top switching MOSFET (HSFET) on-resistance between PMID and SW | TJ = –40°C to +85°C | 27 | 39 | mΩ | ||
| TJ = –40°C to +125°C | 27 | 47 | mΩ | ||||
| RON(LSFET) | Bottom switching MOSFET (LSFET) on-resistance between SW and GND | TJ = –40°C to +85°C | 16 | 24 | mΩ | ||
| TJ = –40°C to +125°C | 16 | 28 | mΩ | ||||
| V(FWD) | BATFET forward voltage in supplement mode | BAT discharge current 10 mA | 30 | mV | |||
| VBAT(GD) | Battery good comparator rising threshold | VBAT rising | 3.4 | 3.55 | 3.7 | V | |
| VBAT(GD_HYST) | Battery good comparator falling threshold | VBAT falling | 100 | mV | |||
| BATTERY CHARGER | |||||||
| VBAT(REG_RANGE) | Typical charge voltage range | 3.840 | 4.608 | V | |||
| VBAT(REG_STEP) | Typical charge voltage step | 16 | mV | ||||
| VBAT(REG) | Charge voltage resolution accuracy | VBAT = 4.208 V (REG06[7:2]=010111) or VBAT = 4.352 V (REG06[7:2]=100000) TJ = –40°C to +85°C | -0.5% | 0.5% | |||
| I(CHG_REG__RANGE) | Typical fast charge current regulation range | 0 | 5056 | mA | |||
| I(CHG_REG_STEP) | Typical fast charge current regulation step | 64 | mA | ||||
| I(CHG_REG_ACC) | Fast charge current regulation accuracy | VBAT = 3.1 V or 3.8 V, ICHG = 128 mA TJ = –40°C to +85°C | -20% | 20% | |||
| VBAT= 3.1 V or 3.8 V, ICHG = 256 mA TJ = –40°C to +85°C | -10% | 10% | |||||
| VBAT= 3.1 V or 3.8 V, ICHG=1792 mA TJ = –40°C to +85°C | -5% | 5% | |||||
| VBAT(LOWV) | Battery LOWV falling threshold | Fast charge to precharge, BATLOWV (REG06[1]) = 1 | 2.6 | 2.8 | 2.9 | V | |
| Battery LOWV rising threshold | Precharge to fast charge, BATLOWV (REG06[1])=1 (Typical 200-mV hysteresis) | 2.8 | 3 | 3.1 | V | ||
| I(PRECHG_RANGE) | Precharge current range | 64 | 1024 | mA | |||
| I(PRECHG_STEP) | Typical precharge current step | 64 | mA | ||||
| I(PRECHG_ACC) | Precharge current accuracy | VBAT=2.6 V, IPRECHG = 256 mA | –10% | +10% | |||
| I(TERM_RANGE) | Termination current range | 64 | 1024 | mA | |||
| I(TERM_STEP) | Typical termination current step | 64 | mA | ||||
| I(TERM_ACC) | Termination current accuracy | ITERM = 256 mA, ICHG<= 1344 mA TJ = –20°C to +85°C | –12% | 12% | |||
| ITERM = 256 mA, ICHG> 1344 mA TJ = –20°C to +85°C | –20% | 20% | |||||
| V(SHORT) | Battery short voltage | VBAT falling | 2 | V | |||
| V(SHORT_HYST) | Battery short voltage hysteresis | VBAT rising | 200 | mV | |||
| I(SHORT) | Battery short current | VBAT < 2.2 V | 100 | mA | |||
| V(RECHG) | Recharge threshold below VBATREG | VBAT falling, VRECHG (REG06[0]=0) = 0 | 100 | mV | |||
| VBAT falling, VRECHG (REG06[0]=0) = 1 | 200 | mV | |||||
| IBAT(LOAD) | Battery discharge load current | VBAT = 4.2 V | 15 | mA | |||
| ISYS(LOAD) | System discharge load current | VSYS = 4.2 V | 30 | mA | |||
| RON(BATFET) | SYS-BAT MOSFET (BATFET) on-resistance | TJ = 25°C | 11 | 13 | mΩ | ||
| TJ = –40°C to +125°C | 11 | 19 | mΩ | ||||
| INPUT VOLTAGE / CURRENT REGULATION | |||||||
| VIN(DPM_RANGE) | Typical Input voltage regulation range | 3.9 | 15.3 | V | |||
| VIN(DPM_STEP) | Typical Input voltage regulation step | 100 | mV | ||||
| VIN(DPM_ACC) | Input voltage regulation accuracy | VINDPM = 4.4 V, 9 V | 3% | 3% | |||
| IIN(DPM_RANGE) | Typical Input current regulation range | 100 | 3250 | mA | |||
| IIN(DPM_STEP) | Typical Input current regulation step | 50 | mA | ||||
| IIN(DPM100_ACC) | Input current 100-mA regulation accuracy VBAT = 5 V, current pulled from SW | IINLIM (REG00[5:0]) =100 mA | 85 | 90 | 100 | mA | |
| IIN(DPM_ACC) | Input current regulation accuracy VBAT = 5 V, current pulled from SW | USB150, IINLIM (REG00[5:0]) = 150 mA | 125 | 135 | 150 | mA | |
| USB500, IINLIM (REG00[5:0]) = 500 mA | 440 | 470 | 500 | mA | |||
| USB900, IINLIM (REG00[5:0]) = 900 mA | 750 | 825 | 900 | mA | |||
| Adapter 1.5 A, IINLIM (REG00[5:0]) = 1500 mA | 1300 | 1400 | 1500 | mA | |||
| IIN(START) | Input current regulation during system start up | VSYS = 2.2 V, IINLIM (REG00[5:0])> = 200 mA | 200 | mA | |||
| KILIM | IINMAX = KILIM/RILIM | Input current regulation by ILIM pin = 1.5 A | 320 | 355 | 390 | A x Ω | |
| D+/D- DETECTION | |||||||
| V(0P6_VSRC) | D+/D– voltage source (0.6 V) | 0.5 | 0.6 | 0.7 | V | ||
| V(3p45_VSRC) | D+/D– voltage source (3.45 V) | 3.3 | 3.45 | 3.6 | V | ||
| I(10UA_ISRC) | D+ connection check current source | 7 | 10 | 14 | µA | ||
| I(100UA_ISINK) | D+/D– current sink (100 µA) | 50 | 100 | 150 | µA | ||
| I(DPDM_LKG) | D+/D– Leakage current | D–, switch open | –1 | 1 | µA | ||
| D+, switch open | –1 | 1 | µA | ||||
| I(1P6MA_ISINK) | D+/D– current sink (1.6 mA) | 1.45 | 1.60 | 1.75 | µA | ||
| V(0P4_VTH) | D+/D– low comparator threshold | 250 | 400 | mV | |||
| V(0P8_VTH) | D+ low comparator threshold | 0.8 | V | ||||
| V(2P7_VTH) | D+/D– comparator threshold for non-standard adapter detection (divider 1, 3, or 4) | 2.55 | 2.85 | V | |||
| V(2P0_VTH) | D+/D– comparator threshold for non-standard adapter detection (divider 1, 3) | 1.85 | 2.15 | V | |||
| V(1P2_VTH) | D+/D– comparator threshold for non-standard adapter detection (divider 2) | 1.05 | 1.35 | V | |||
| R(D–_DWN) | D– pulldown for connection check | 14.25 | 24.8 | kΩ | |||
| BAT OVER-VOLTAGE/CURRENT PROTECTION | |||||||
| VBAT(OVP) | Battery over-voltage threshold | VBAT rising, as percentage of VBAT(REG) | 104% | ||||
| VBAT(OVP_HYST) | Battery over-voltage hysteresis | VBAT falling, as percentage of VBAT(REG) | 2% | ||||
| IBAT(FET_OCP) | System over-current threshold | 9 | A | ||||
| THERMAL REGULATION AND THERMAL SHUTDOWN | |||||||
| TREG | Junction temperature regulation accuracy | REG08[1:0] = 11 | 120 | °C | |||
| TSHUT | Thermal shutdown rising temperature | Temperature rising | 160 | °C | |||
| TSHUT(HYS) | Thermal shutdown hysteresis | Temperature falling | 30 | °C | |||
| COLD/HOT THERMISTOR COMPARATOR (BUCK MODE) | |||||||
| V(LTF) | Cold temperature threshold, TS pin voltage rising threshold | As percentage to V(REGN) | 72.75% | 73.25% | 73.75% | ||
| V(LTF_HYS) | Cold temperature hysteresis, TS pin voltage falling | As percentage to V(REGN) | 0.4% | ||||
| V(HTF) | Hot temperature TS pin voltage rising threshold | As percentage to V(REGN) | 47.75% | 48.25% | 48.75% | ||
| V(TCO) | Cut-off temperature TS pin voltage falling threshold | As percentage to V(REGN) | 44.25% | 44.75% | 45.25% | ||
| COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | |||||||
| V(BCOLD0) | Cold temperature threshold, TS pin voltage rising threshold | As percentage to VREGN , REG01[5] = 0 (Approx. -10°C w/ 103AT) | 76.5% | 77% | 77.5% | ||
| V(BCOLD0_HYS) | Cold temperature threshold, TS pin voltage falling threshold | As percentage to VREGN REG01[5] = 0 | 1% | ||||
| V(BCOLD1) | Cold temperature threshold 1, TS pin voltage rising threshold | As percentage to VREGN REG01[5] = 1 (Approximately –20°C w/ 103AT) | 79.5% | 80% | 80.5% | ||
| V(BCOLD1_HYS) | Cold temperature threshold 1, TS pin voltage falling threshold | As percentage to VREGN REG01[5] = 1 | 1% | ||||
| V(BHOT0) | Hot temperature threshold, TS pin voltage falling threshold | As percentage to VREGN REG01[7:6] = 01 (Approx. 55°C w/ 103AT) | 37.25% | 37.75% | 38.25% | ||
| V(BHOT0_HYS) | Hot temperature threshold, TS pin voltage rising threshold | As percentage to VREGN REG01[7:6] = 01 | 3% | ||||
| V(BHOT1) | Hot temperature threshold 1, TS pin voltage falling threshold | As percentage to VREGN REG01[7:6] = 00 (Approx. 60°C w/ 103AT) | 33.875% | 34.375% | 34.875% | ||
| V(BHOT1_HYS) | Hot temperature threshold 1, TS pin voltage rising threshold | As percentage to VREGN REG01[7:6] = 00 | 3% | ||||
| V(BHOT2) | Hot temperature threshold 2, TS pin voltage falling threshold | As percentage to VREGN REG01[7:6] = 10 (Approx. 65°C w/ 103AT) | 30.75% | 31.25% | 31.75% | ||
| V(BHOT2_HYS) | Hot temperature threshold 2, TS pin voltage rising threshold | As percentage to VREGN REG01[7:6] =10 | 3% | ||||
| PWM | |||||||
| FSW | PWM switching frequency, and digital clock | Oscillator frequency | 1.32 | 1.68 | MHz | ||
| DMAX | Maximum PWM duty cycle | 97% | |||||
| BOOST MODE OPERATION | |||||||
| V(OTG_REG_RANGE) | Typical boost mode regulation voltage range | 4.55 | 5.55 | V | |||
| V(OTG_REG_STEP) | Typical boost mode regulation voltage step | 64 | mV | ||||
| V(OTG_REG_ACC) | Boost mode regulation voltage accuracy | I(PMID) = 0 A, BOOSTV=5.126V (REG0A[7:4] = 1001) | –3% | 3% | |||
| V(OTG_BAT1) | Minimum battery voltage to exit boost mode | BAT falling, MIN_VBAT_SEL=0 | 2.7 | 2.9 | V | ||
| V(OTG_BAT2) | Minimum battery voltage to exit boost mode | BAT falling, MIN_VBAT_SEL=1 | 2.4 | 2.6 | V | ||
| V(OTG_BAT_EN) | Minimum battery voltage to enter boost mode | BAT rising, MIN_VBAT_SEL=0 | 2.9 | 3.1 | V | ||
| BAT rising, MIN_VBAT_SEL=1 | 2.7 | 2.9 | V | ||||
| I(OTG) | Boost mode output current range | BAT > 3.0 V , MIN_VBAT_SEL=0 | 3.1 | A | |||
| BAT > 2.5 V , MIN_VBAT_SEL=1 | 2.4 | A | |||||
| V(OTG_OVP) | Boost mode over-voltage threshold | Rising threshold | 5.8 | 6 | V | ||
| REGN LDO | |||||||
| V(REGN) | REGN LDO output voltage | V(VBUS) = 9 V, I(REGN) = 40 mA | 5.6 | 6 | 6.4 | V | |
| V(VBUS) = 5 V, I(REGN) = 20 mA | 4.7 | 4.8 | V | ||||
| I(REGN) | REGN LDO current limit | V(VBUS) = 9 V, V(REGN) = 3.8 V | 50 | mA | |||
| ANALOG-TO-DIGITAL CONVERTER (ADC) | |||||||
| RES | Resolution | Rising threshold | 7 | bits | |||
| VBAT(RANGE) | Typical battery voltage range | V(VBUS) > VBAT + V(SLEEP) or OTG mode is enabled | 2.304 | 4.848 | V | ||
| V(VBUS) < VBAT + V(SLEEP) and OTG mode is disabled | VSYS_MIN | 4.848 | V | ||||
| V(BAT_RES) | Typical battery voltage resolution | 20 | mV | ||||
| V(SYS_RANGE) | Typical system voltage range | V(VBUS) > VBAT + V(SLEEP) or OTG mode is enabled | 2.304 | 4.848 | V | ||
| V(VBUS) < VBAT + V(SLEEP) and OTG mode is disabled | VSYS_MIN | 4.848 | V | ||||
| V(SYS_RES) | Typical system voltage resolution | 20 | mV | ||||
| V(VBUS_RANGE) | Typical VVBUS voltage range | V(VBUS) > VBAT + V(SLEEP) or OTG mode is enabled | 2.6 | 15.3 | V | ||
| V(VBUS_RES) | Typical VVBUS voltage resolution | 100 | mV | ||||
| IBAT(RANGE) | Typical battery charge current range | V(VBUS) > VBAT + V(SLEEP) and VBAT > VBAT(SHORT) | 0 | 6.4 | A | ||
| IBAT(RES) | Typical battery charge current resolution | 50 | mA | ||||
| V(TS_RANGE) | Typical TS voltage range | 21% | 80% | ||||
| V(TS_RES) | Typical TS voltage resolution | 0.47% | |||||
| LOGIC I/O PIN (OTG, CE, PSEL,QON) | |||||||
| VIH | Input high threshold level | 1.3 | |||||
| VIL | Input low threshold level | 0.4 | V | ||||
| IIN(BIAS) | High Level Leakage Current | Pull-up rail 1.8 V | 1 | µA | |||
| V(QON) | Internal /QON pull-up | Battery only mode | BAT | V | |||
| V(VBUS) = 9 V | 5.8 | V | |||||
| V(VBUS) = 5 V | 4.3 | V | |||||
| R(QON) | Internal /QON pull-up resistance | 200 | kΩ | ||||
| LOGIC I/O PIN (INT, STAT, PG, DSEL) | |||||||
| VOL | Output low threshold level | Sink current = 5 mA, sink current | 0.4 | V | |||
| IOUT_BIAS | High level leakage current | Pull-up rail 1.8 V | 1 | µA | |||
| I2C INTERFACE (SCL, SDA) | |||||||
| VIH | Input high threshold level, SCL and SDA | Pull-up rail 1.8 V | 1.3 | ||||
| VIL | Input low threshold level | Pull-up rail 1.8 V | 0.4 | V | |||
| VOL | Output low threshold level | Sink current = 5 mA, sink current | 0.4 | V | |||
| IBIAS | High level leakage current | Pull-up rail 1.8 V | 1 | µA | |||