ZHCSJJ2B March   2019  – December 2022 BQ27Z561-R1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current
    6. 7.6  Internal 1.8-V LDO (REG18)
    7. 7.7  I/O (PULS, INT)
    8. 7.8  Chip Enable (CE)
    9. 7.9  Internal Temperature Sensor
    10. 7.10 NTC Thermistor Measurement Support
    11. 7.11 Coulomb Counter (CC)
    12. 7.12 Analog Digital Converter (ADC)
    13. 7.13 Internal Oscillator Specifications
    14. 7.14 Voltage Reference1 (REF1)
    15. 7.15 Voltage Reference2 (REF2)
    16. 7.16 Flash Memory
    17. 7.17 I2C I/O
    18. 7.18 I2C Timing — 100 kHz
    19. 7.19 I2C Timing — 400 kHz
    20. 7.20 HDQ Timing
    21. 7.21 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  BQ27Z561-R1 Processor
      2. 8.3.2  Battery Parameter Measurements
        1. 8.3.2.1 Coulomb Counter (CC)
        2. 8.3.2.2 CC Digital Filter
        3. 8.3.2.3 ADC Multiplexer
        4. 8.3.2.4 Analog-to-Digital Converter (ADC)
        5. 8.3.2.5 Internal Temperature Sensor
        6. 8.3.2.6 External Temperature Sensor Support
      3. 8.3.3  Power Supply Control
      4. 8.3.4  Bus Communication Interface
      5. 8.3.5  Low Frequency Oscillator
      6. 8.3.6  High Frequency Oscillator
      7. 8.3.7  1.8-V Low Dropout Regulator
      8. 8.3.8  Internal Voltage References
      9. 8.3.9  Gas Gauging
      10. 8.3.10 Charge Control Features
      11. 8.3.11 Authentication
    4. 8.4 Device Functional Modes
      1. 8.4.1 Lifetime Logging Features
      2. 8.4.2 Configuration
        1. 8.4.2.1 Coulomb Counting
        2. 8.4.2.2 Cell Voltage Measurements
        3. 8.4.2.3 Auto Calibration
        4. 8.4.2.4 Temperature Measurements
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements (Default)
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Changing Design Parameters
      3. 9.2.3 Calibration Process
      4. 9.2.4 Gauging Data Updates
        1. 9.2.4.1 Application Curve
  10. 10Power Supply Requirements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

7.7 I/O (PULS, INT)

Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input voltage VREG18 = 1.8 V 1.15 V
VIL Low-level input voltage low VREG18 = 1.8 V 0.50 V
VOL Output voltage low VREG18 = 1.8 V, IOL = 1 mA 0.4 V
CI Input capacitance 5 pF
Ilkg Input leakage current 1 µA
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