米6体育平台手机版

SLUSFQ0 November 2024 BQ27Z758

PRODUCTION DATA

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YAH|15

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5.7 Digital I/O: Timing Characteristics

PARAMETER		TEST CONDITIONS	MIN	NOM	MAX	UNIT
I²C Timing — 100 kHz
f_SCL	Clock Operating Frequency	SCL duty cycle = 50%			100	kHz
t_HD:STA	START Condition Hold Time		4.0			µs
t_LOW	Low period of the SCL Clock		4.7			µs
t_HIGH	High period of the SCL Clock		4.0			µs
t_SU:STA	Setup repeated START		4.7			µs
t_HD:DAT	Data hold time (SDA input)		0			ns
t_SU:DAT	Data setup time (SDA input)		250			ns
t_r	Clock Rise Time	10% to 90%			1000	ns
t_f	Clock Fall Time	90% to 10%			300	ns
t_SU:STO	Setup time STOP Condition		4.0			µs
t_BUF	Bus free time STOP to START		4.7			µs
I2C Timing — 400 kHz
f_SCL	Clock Operating Frequency	SCL duty cycle = 50%			400	kHz
t_HD:STA	START Condition Hold Time		0.6			µs
t_LOW	Low period of the SCL Clock		1.3			µs
t_HIGH	High period of the SCL Clock		600			ns
t_SU:STA	Setup repeated START		600			ns
t_HD:DAT	Data hold time (SDA input)		0			ns
t_SU:DAT	Data setup time (SDA input)		100			ns
t_r	Clock Rise Time	10% to 90%			300	ns
t_f	Clock Fall Time	90% to 10%			300	ns
t_SU:STO	Setup time STOP Condition		0.6			µs
t_BUF	Bus free time STOP to START		1.3			µs
HDQ Timing
t_B	Break Time		190			µs
t_BR	Break Recovery Time		40			µs
t_HW1	Host Write 1 Time	Host drives HDQ	0.5		50	µs
t_HW0	Host Write 0 Time	Host drives HDQ	86		145	µs
t_CYCH	Cycle Time, Host to device	device drives HDQ	190			µs
t_CYCD	Cycle Time, device to Host	device drives HDQ	190	205	250	µs
t_DW1	Device Write 1 Time	device drives HDQ	32		50	µs
t_DW0	Device Write 0 Time	device drives HDQ	80		145	µs
t_RSPS	Device Response Time	device drives HDQ	190		950	µs
t_TRND	Host Turn Around Time	Host drives HDQ after device drives HDQ	250			µs
t_RISE	HDQ Line Rising Time to Logic 1				1.8	µs
t_RST	HDQ Reset	Host drives HDQ low before device reset	2.2			s

Figure 5-1 I²C Timing

Figure 5-2 HDQ Timing