SLUSFQ0 November   2024 BQ27Z758

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configurations and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
      1. 5.5.1 Supply Current
      2. 5.5.2 Common Analog (LDO, LFO, HFO, REF1, REF2, I-WAKE)
      3. 5.5.3 Battery Protection (CHG, DSG)
      4. 5.5.4 Cell Sensing Output (BAT_SP, BAT_SN)
      5. 5.5.5 Gauge Measurements (ADC, CC, Temperature)
      6. 5.5.6 Flash Memory
    6. 5.6 Digital I/O: DC Characteristics
    7. 5.7 Digital I/O: Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  BQ27Z758 Processor
      2. 6.3.2  Battery Parameter Measurements
        1. 6.3.2.1 Coulomb Counter (CC) and Digital Filter
        2. 6.3.2.2 ADC Multiplexer
        3. 6.3.2.3 Analog-to-Digital Converter (ADC)
        4. 6.3.2.4 Internal Temperature Sensor
        5. 6.3.2.5 External Temperature Sensor Support
      3. 6.3.3  Power Supply Control
      4. 6.3.4  ENAB Pin
      5. 6.3.5  Bus Communication Interface
      6. 6.3.6  Low Frequency Oscillator
      7. 6.3.7  High Frequency Oscillator
      8. 6.3.8  1.8-V Low Dropout Regulator
      9. 6.3.9  Internal Voltage References
      10. 6.3.10 Overcurrent in Discharge Protection
      11. 6.3.11 Overcurrent in Charge Protection
      12. 6.3.12 Short-Circuit Current in Discharge Protection
      13. 6.3.13 Primary Protection Features
      14. 6.3.14 Battery Sensing
      15. 6.3.15 Gas Gauging
      16. 6.3.16 Zero Volt Charging (ZVCHG)
      17. 6.3.17 Charge Control Features
      18. 6.3.18 Authentication
    4. 6.4 Device Functional Modes
      1. 6.4.1 Lifetime Logging Features
      2. 6.4.2 Configuration
        1. 6.4.2.1 Coulomb Counting
        2. 6.4.2.2 Cell Voltage Measurements
        3. 6.4.2.3 Auto Calibration
        4. 6.4.2.4 Temperature Measurements
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements (Default)
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Changing Design Parameters
      3. 7.2.3 Calibration Process
      4. 7.2.4 Gauging Data Updates
        1. 7.2.4.1 Application Curve
  9. 8 Power Supply Requirements
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Orderable, and Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YAH|15
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5.5 Gauge Measurements (ADC, CC, Temperature)

Unless otherwise noted, characteristics noted under conditions of TA = –40 to 85℃
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Analog Digital Converter (ADC)
VBAT_RESBattery Voltage ADC Resolution (bits)Signed data format, ±15 bits16bits
VBAT_FSBattery Measurement Full Scale Range–0.25.5V
VBAT_ERRBattery Voltage ADC ErrorTA = +25℃, VBAT = 4.0 VDC±1mV
VBAT = 2.5 to 5.0 VDC±2
RBATEffective input resistance8MΩ
tBATBattery Voltage Conversion Time11.7ms
VADC_RESEffective ResolutionVBAT1415bits
Coulomb Counter (CC)
VCC_CMCommon mode voltage rangeVSS = 0V, 2V ≤ VBAT ≤ 5VVSSVBATV
VCC_INInput voltage rangeVCC_CM–0.1VCC_CM+0.1V
ICC_INEffective input current sense range (1)(2)Ideal RSNS = 1 mΩ (16-bit data limited)±32,768mA
Ideal RSNS = 2 mΩ (16-bit data limited)
Ideal RSNS = 5 mΩ±20,000
tCC_CONVConversion time Single conversion1000ms
CCADC_RESEffective Resolution16bits
1 LSB = VREF1/10/(±215)±3.7µV
ICC_ERREffective current measurement errorIdeal RSNS = 1.0 mΩ, 10.0 A, TA = 25 ℃26mA
Ideal RSNS = 1.0 mΩ, –10.0 A, TA = 25 ℃29
CCOSEOffset error16- bit Post-Calibration-2.61.3+2.6LSB
CCOSE_DRIFTOffset error drift15-bit + sign, Post Calibration0.040.07LSB/°C
CCGEGain Error15-bit + sign, Over input voltage range-492131+492LSB
RCC_INEffective input resistance7MΩ
NTC Thermistor Measurement
RNTC(PU)Internal Pullup ResistanceFactory Trimmed, Firmware compensated14.41821.6kΩ
RNTC(DRIFT)Resistance drift over temperatureFirmware compensated–250–1200PPM/°C
RNTC_ERRExternal NTC Thermistor
Temperature Measurement
Error with Linearization		Ideal 10KΩ 103AT NTC, TA = –10 to 70℃–2±1+2℃
Ideal 10KΩ 103AT NTC, TA = –40 to 85℃–3±2+3
Internal Temperature Sensor
V(TEMP)Internal Temperature sensor voltage driftVTEMPP1.651.731.8mV/°C
V(TEMP)Internal Temperature sensor voltage driftVTEMPP – VTEMPN (specified by design)0.170.180.19mV/°C
(1) Firmware-based parameter.  Not production tested.
(2) Limited by 16-bit twos-complement numeric format
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