SLUSFQ0 November   2024 BQ27Z758

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configurations and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
      1. 5.5.1 Supply Current
      2. 5.5.2 Common Analog (LDO, LFO, HFO, REF1, REF2, I-WAKE)
      3. 5.5.3 Battery Protection (CHG, DSG)
      4. 5.5.4 Cell Sensing Output (BAT_SP, BAT_SN)
      5. 5.5.5 Gauge Measurements (ADC, CC, Temperature)
      6. 5.5.6 Flash Memory
    6. 5.6 Digital I/O: DC Characteristics
    7. 5.7 Digital I/O: Timing Characteristics
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  BQ27Z758 Processor
      2. 6.3.2  Battery Parameter Measurements
        1. 6.3.2.1 Coulomb Counter (CC) and Digital Filter
        2. 6.3.2.2 ADC Multiplexer
        3. 6.3.2.3 Analog-to-Digital Converter (ADC)
        4. 6.3.2.4 Internal Temperature Sensor
        5. 6.3.2.5 External Temperature Sensor Support
      3. 6.3.3  Power Supply Control
      4. 6.3.4  ENAB Pin
      5. 6.3.5  Bus Communication Interface
      6. 6.3.6  Low Frequency Oscillator
      7. 6.3.7  High Frequency Oscillator
      8. 6.3.8  1.8-V Low Dropout Regulator
      9. 6.3.9  Internal Voltage References
      10. 6.3.10 Overcurrent in Discharge Protection
      11. 6.3.11 Overcurrent in Charge Protection
      12. 6.3.12 Short-Circuit Current in Discharge Protection
      13. 6.3.13 Primary Protection Features
      14. 6.3.14 Battery Sensing
      15. 6.3.15 Gas Gauging
      16. 6.3.16 Zero Volt Charging (ZVCHG)
      17. 6.3.17 Charge Control Features
      18. 6.3.18 Authentication
    4. 6.4 Device Functional Modes
      1. 6.4.1 Lifetime Logging Features
      2. 6.4.2 Configuration
        1. 6.4.2.1 Coulomb Counting
        2. 6.4.2.2 Cell Voltage Measurements
        3. 6.4.2.3 Auto Calibration
        4. 6.4.2.4 Temperature Measurements
  8. Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements (Default)
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Changing Design Parameters
      3. 7.2.3 Calibration Process
      4. 7.2.4 Gauging Data Updates
        1. 7.2.4.1 Application Curve
  9. Power Supply Requirements
  10. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Orderable, and Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YAH|15
散热焊盘机械数据 (封装 | 引脚)
订购信息

Battery Protection (CHG, DSG)

Protection hardware circuits operating over free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
N-CH FET DRIVER, CHG AND DSG
VDRIVER Gate Driver Voltage, VCHG or VDSG CLOAD = 8 nF 2 × VDD V
AFETON FET driver gain factor, Vgs voltage to FET AFETON = (Vdriver – VDD)/VDD,
CLOAD = 8 nF, UVP < VDD < 3.8 V
0.9 1.0 1.2 V/V
VDSGOFF DSG FET driver off output voltage VDSGOFF = VDSG – PACK, CL= 8 nF 0.2 V
VCHGOFF CHG FET driver off output voltage VCHGOFF = VCHG – VSS , CL= 8 nF 0.2 V
trise FET driver rise time (1) CL = 8 nF, (Vdriver – VDD)/VDD = 1x VFETON changes from VDD to 2×VDD 400 800 us
tfall FET driver fall time (1) CL = 8 nF, VFETON changes from VFETMAX to VFETOFF 50 200 us
VFET_SHUT Firmware FET driver shut down voltage (2)(4) Configurable with 1-mV steps 2000 2100 5000 mV
VFET_SHUT_REL Firmware FET driver shut down release (2)(4) 2000 2300 5000 mV
ILOAD FET driver maximum loading 10 uA
VOLTAGE PROTECTION
VOVP Hardware overvoltage protection (OVP) detection range (3)

Recommended threshold range. Factory trimmed in 50-mV steps

3500 5000 mV

Factory default trimmed threshold(3)

4525
VOVP_ACC Hardware OVP detection accuracy (3) TA = 25oC,
CLOAD at CHG/DSG < 1 μA
–15 15 mV
TA = 0oC to 60oC,
CLOAD at CHG/DSG < 1 μA
–25 25 mV
TA = –40oC to 85oC,
CLOAD at CHG/DSG < 1 μA
–50 50 mV
VFW_OVP Firmware OVP detection range (4) Configurable with 1-mV steps 2000 4490 5000 mV
VFW_OVP_REL Firmware OVP release range (4) 2000 4290 5000 mV
VUVP Hardware undervoltage (UVP) detection range (3) Recommended threshold range. Factory trimmed in 50-mV steps 2000 4000 mV
Factory default trimmed threshold(3) 2300
VUVP_ACC Hardware UVP detection accuracy (3) TA = 25oC,
CLOAD at CHG/DSG < 1 μA
–20 20 mV
TA = 0oC to 60oC,
CLOAD at CHG/DSG < 1uA
–30 30 mV
TA = –40oC to 85oC,
CLOAD at CHG/DSG < 1uA
–50 50 mV
VFW_UVP Firmware UVP detection range (4) Configurable with 1 mV steps 2000 2500 5000
VFW_UVP_REL Firmware UVP release range (4) 2000 2900 5000 mV
RPACK-VSS Resistance between PACK and VSS SHUTDOWN mode only 100 300 550
VRCP Reverse Charge Protection limit –10V Continuous Operating, –12 V ABS MAX –10 V
CURRENT PROTECTION
VOCC Sense voltage threshold range for
Overcurrent in Charge (OCC) (3)(4)

Recommended threshold range. Factory trimmed in 1-mV steps

1 100 mV
Factory default trimmed threshold(3) 14
VOCC OCC 2-mV step design option 2 mV step configuration option 2 256 mV
IOCC Effective OCC current threshold range from VOCC(1)(4) Ideal RSNS = 1 mΩ 4 14 100 A
Ideal RSNS = 2 mΩ 2 7 50
Ideal RSNS = 5 mΩ 0.8 2.8 20
IFW_OCC Firmware OCC detection range (4) Configurable with 1 mA steps 0 12000 +ICC_IN mA
VOCD Sense voltage threshold range for
Overcurrent in discharge (OCD) (3)(4)

Recommended threshold range. Factory trimmed in 1-mV steps

–4 –100 mV
Factory default trimmed threshold(3) –16
VOCD OCD 2-mV step design option ±2 mV step configuration option –2 –256 mV
IOCD Effective OCD current threshold range from VOCD(1)(4) Ideal RSNS = 1 mΩ –4 –16 –100 A
Ideal RSNS = 2 mΩ –2 –8 –50
Ideal RSNS = 5 mΩ –0.8 –3.2 –20
IFW_OCD Firmware OCD detection range (4) Configurable with 1-mA steps –ICC_IN –7000 0 mA
VSCD Sense voltage threshold range for
Short circuit current in discharge (SCD) (3)(4)
Threshold factory trimmed with 1-mV steps –5 –120 mV
Factory default trimmed threshold(3) –20
ISCD Effective SCD current threshold range from VSCD(1)(4) Ideal RSNS = 1 mΩ –5 –20 –120 A
Ideal RSNS = 2 mΩ –2.5 –10 –60
Ideal RSNS = 5 mΩ –1 –4 –24
VOC_ACC Overcurrent (OCC, OCD, SCD) detection accuracy (3) <20 mV, TA = –25°C to 60oC -2.1 2.1 mV
<20 mV –2.1 2.1
20 mV–55 mV –3 3
56 mV–100 mV –5 5
>100 mV –12 12
IPACK-VDD Current sink between PACK and VDD during current fault Load removal detection in firmware
15 μA
VOC_REL OCC fault release threshold (VPACK – VBAT) 100 mV
OCD, SCD fault release threshold –400 mV
OVERTEMPERATURE PROTECTION
TOTC_TRIP OTC trip/release threshold (2)(4) Firmware-based and configurable in 0.1°C steps –40.0 55.0 150.0 °C
TOTC_REL –40.0 50.0 150.0 °C
TOTD_TRIP OTD trip/release threshold (2)(4) –40.0 60.0 150.0 °C
TOTD_REL –40.0 55.0 150.0 °C
TUTC_TRIP UTC trip/release threshold (2)(4) –40.0 0.0 150.0 °C
TUTC_REL –40.0 5.0 150.0 °C
TUTD_TRIP UTD trip/release threshold (2)(4) –40.0 0.0 150.0 °C
TUTD_REL –40.0 5.0 150.0 °C
PROTECTION DELAY(1)
tOVP OVP detection delay (debounce) options (1)(4) Configurable with 4095 delay options in 1.953-ms steps. Factory default = 1000 ms (512 counts) typical 1.953 1000 7998 ms
tUVP UVP detection delay (debounce) options (1)(4) Configurable with 127-delay options in 1.953-ms steps. Factory default = 127 ms (65 counts) typical 1.953 127 248 ms
tOCD OCD detection delay (debounce) options (1)(4) Configurable with 31 delay options in 1.953-ms steps. Factory default = 7.8 ms (4 counts) typical 1.953 7.8 60.5 ms
tOCC OCC detection delay (debounce) options (1)(4) Configurable with 255 delay options in 0.244-ms steps. Factory default = 15.9 ms (65 counts) typical 0.244 15.9 62.3 ms
tSCD SCD detection delay (debounce) options (1)(4) Configurable with seven delay options in 122-µs steps. Factory default = 244-µs (2 counts) typical 122 244 854 µs
TOTC_DLY OTC trip delay(2)(4) Firmware-based and configurable in 1-s steps.
The typical value is the data flash factory default.
0 2 255 s
TOTD_DLY OTD trip delay(2)(4) 0 2 255 s
TUTC_DLY UTC trip delay(2)(4) 0 2 255 s
TUTD_DLY UTD trip delay(2)(4) 0 2 255 s
ZERO VOLT (LOW VOLTAGE) CHARGING
V0CHGR Charger voltage required to start zero-volt charging V0CHGR = VPACK – VSS 1.6 V
Specified by design. Not production tested.
Firmware-based parameter. Not production tested.
Accuracy assured by factory trim at specified default threshold. A change from the default threshold requires device calibration in the field. Refer to the BQ27Z746-R1 and BQ27Z758 Technical Reference Manual.
Specified typical value is the factory default. Not production tested. The data flash configuration value can be changed in FULL ACCESS mode and is locked in SEALED mode. Refer to the BQ27Z746-R1 and BQ27Z758 Technical Reference Manual.