ZHCSKR6B January 2020 – January 2022 BQ28Z610-R1
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 说明（续）
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Supply Current
- 7.6 Power Supply Control
- 7.7 Low-Voltage General Purpose I/O, TS1
- 7.8 Power-On Reset (POR)
- 7.9 Internal 1.8-V LDO
- 7.10 Current Wake Comparator
- 7.11 Coulomb Counter
- 7.12 ADC Digital Filter
- 7.13 ADC Multiplexer
- 7.14 Cell Balancing Support
- 7.15 Internal Temperature Sensor
- 7.16 NTC Thermistor Measurement Support
- 7.17 High-Frequency Oscillator
- 7.18 Low-Frequency Oscillator
- 7.19 Voltage Reference 1
- 7.20 Voltage Reference 2
- 7.21 Instruction Flash
- 7.22 Data Flash
- 7.23 Current Protection Thresholds
- 7.24 Current Protection Timing
- 7.25 N-CH FET Drive (CHG, DSG)
- 7.26 I2C Interface I/O
- 7.27 I2C Interface Timing
- 7.28 Typical Characteristics
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Battery Parameter Measurements
- 8.3.2 Coulomb Counter (CC)
- 8.3.3 CC Digital Filter
- 8.3.4 ADC Multiplexer
- 8.3.5 Analog-to-Digital Converter (ADC)
- 8.3.6 ADC Digital Filter
- 8.3.7 Internal Temperature Sensor
- 8.3.8 External Temperature Sensor Support
- 8.3.9 Power Supply Control
- 8.3.10 Power-On Reset
- 8.3.11 Bus Communication Interface
- 8.3.12 I2C Timeout
- 8.3.13 Cell Balancing Support
- 8.3.14 N-Channel Protection FET Drive
- 8.3.15 Low Frequency Oscillator
- 8.3.16 High Frequency Oscillator
- 8.3.17 1.8-V Low Dropout Regulator
- 8.3.18 Internal Voltage References
- 8.3.19 Overcurrent in Discharge Protection
- 8.3.20 Short-Circuit Current in Charge Protection
- 8.3.21 Short-Circuit Current in Discharge 1 and 2 Protection
- 8.3.22 Primary Protection Features
- 8.3.23 Gas Gauging
- 8.3.24 Charge Control Features
- 8.3.25 Authentication
- 8.4 Device Functional Modes
- 9 Applications and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
12.6 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |