ZHCSDT5C September   2010  – March 2016

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Options
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Recommended Cell Balancing Configurations
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Voltage Protection
      2. 8.1.2 Cell Balancing
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection (OUT) Timing
      2. 8.3.2 Cell Voltage > VPROTECT
      3. 8.3.3 Cell Connection Sequence
      4. 8.3.4 Cell Balance Enable Control
      5. 8.3.5 Cell Balance Configuration
      6. 8.3.6 Cell Imbalance Auto-Detection (Via Cell Voltage)
      7. 8.3.7 Customer Test Mode
      8. 8.3.8 Test Conditions
    4. 8.4 Device Functional Modes
      1. 8.4.1 NORMAL Mode
      2. 8.4.2 PROTECTION Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Battery Connection
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 System Example
      1. 9.3.1 External Cell Balancing
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRB|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over-operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage range, VMAX VDD–GND –0.3 16 V
Input voltage range, VIN VC2–GND, VC1–GND –0.3 16 V
VC2–VC1, CD–GND –0.3 8 V
CB_EN–GND –0.3 16 V
Output voltage range, VOUT OUT–GND –0.3 16 V
Continuous total power dissipation, PTOT See Thermal Information.
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply voltage, VDD 4 10 V
Input voltage range VC2–VC1, VC1–GND 0 5 V
Delay time capacitance, td(CD) CCD (See Figure 9.) 0.1 µF
Voltage monitor filter resistance RIN (See Figure 9.) 100 1K Ω
Voltage monitor filter capacitance CIN (See Figure 9.) 0.01 0.1 µF
Supply voltage filter resistance RVD (See Figure 9.) 100 1K Ω
Supply voltage filter capacitance CVD (See Figure 9.) 0.1 µF
Cell balance resistance RCB (See Figure 9 and Protection (OUT) Timing.) 100 4.7K Ω
Operating ambient temperature range, TA –40 110 °C

7.4 Thermal Information

THERMAL METRIC(1) bq2920x UNIT
DRB
8 PINS
RθJA Junction-to-ambient thermal resistance 50.5 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 25.1 °C/W
RθJB Junction-to-board thermal resistance 19.3 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 18.9 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance 5.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Typical values stated where TA = 25°C and VDD = 7.2 V. Minimum and maximum values stated where TA = –40°C to 110°C and VDD = 4 V to 10 V (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VPROTECT Overvoltage detection voltage bq29209 4.3 V
bq29200 4.35
VHYS Overvoltage detection hysteresis 200 300 400 mV
VOA Overvoltage detection accuracy TA = 25°C –10 10 mV
VOA_DRIFT Overvoltage threshold temperature drift TA = 0°C to 60°C –0.4 0.4 mV°/C
TA = –40°C to 110°C –0.6 0.6
XDELAY Overvoltage delay time scale factor TA = 0°C to 60°C
Note: Does not include external capacitor variation.		 6 9 12 s/µF
TA = –40°C to 110°C
Note: Does not include external capacitor variation.		 5.5 9 13.5
XDELAY_CTM(1) Overvoltage delay time scale factor in Customer Test Mode 0.08 s/µF
ICD(CHG) Overvoltage detection charging current 150 nA
ICD(DSG) Overvoltage detection discharging current 60 µA
VCD Overvoltage detection external capacitor comparator threshold 1.2 V
ICC Supply current (VC2–VC1) = (VC1–GND) = 3.5 V (See Figure 7.) 3 6 µA
VOUT OUT pin drive voltage (VC2–VC1) or (VC1–GND) > VPROTECT,
VDD = 10 V, IOH = 0		 6 8.25 9.5 V
(VC2–VC1) or (VC1–GND) = VPROTECT, VDD = VPROTECT,
IOH = –100 µA, TA = 0°C to 60°C		 1.75 2.5 V
(VC2–VC1) and (VC1–GND) < VPROTECT ,
IOL = 100 µA, TA = 25°C		 200 mV
(VC2–VC1) and (VC1–GND) < VPROTECT ,
IOL = 0 µA, TA = 25°C		 0 10 mV
VC2 = VC1 = VDD = 4 V, IOL = 100 µA 200 mV
IOH High-level output current OUT = 1.75 V, (VC2–VC1) or (VC1–GND) = VPROTECT, VDD = VPROTECT to 10 V, TA = 0°C to 60°C –100 µA
IOL Low-level output current OUT = 0.05 V, (VC2–VC1) or (VC1–GND) < VPROTECT, VDD = VPROTECT to 10 V, TA = 0°C to 60°C 30 85 µA
IOH_ZV High-level short-circuit output current OUT = 0 V, (VC2–VC1) = (VC1–GND) = VPROTECT
VDD = 4 to 10 V 		–8 mA
IIN Input current at VCx pins Measured at VC1, (VC2–VC1) = (VC1–GND) = 3.5 V,
TA = 0°C to 60°C (See Figure 7.)		 –0.2 0.2 µA
Measured at VC2, (VC2–VC1) = (VC1–GND) = 3.5 V,
TA = 0°C to 60°C (See Figure 7.)		 2.5 µA
VMM_DET_ON Cell mismatch detection threshold for turning ON (VC2–VC1) versus (VC1–GND) and vice-versa when cell balancing is enabled. VC2 = VDD = 7.6 V 17 30 45 mV
VMM_DET_OFF Cell mismatch detection threshold for turning OFF Delta between (VC2–VC1) and (VC1–GND) when cell balancing is disabled. VC2 = VDD = 7.6 V –9 0 9 mV
VCB_EN_ON Cell balance enable ON threshold Active LOW pin at CB_EN 1 V
VCB_EN_OFF Cell balance enable OFF threshold Active HIGH at CB_EN 2.2 V
ICB_EN Cell balance enable ON input current CB_EN = GND (See Figure 8.) 0.2 µA
RCB1 Internal cell balance switch resistance CB_EN = GND Ω
RCB2 Internal cell balance switch resistance CB_EN = GND Ω
(1) Specified by design. Not 100% tested in production.

7.6 Recommended Cell Balancing Configurations

Typical values stated where TA = 25°C and (VC2–VC1), (VC1–GND) = 3.8 V. Minimum and maximum values stated where TA = –40°C to 110°C, VDD = 4 V to 10 V, and (VC2–VC1), (VC1–GND) = 3 V to 4.2 V. All values assume recommended supply voltage filter resistance RVD of 100 Ω and 5% accurate or better cell balance resistor RCB.
MIN NOM MAX UNIT
ICB Cell balance input current RCB = 4700 Ω 0.5 0.75 1 mA
RCB = 2200 Ω 1 1.5 2
RCB = 910 Ω 2 3 4
RCB = 560 Ω 3 4.5 6
RCB = 360 Ω 3.5 6 8.5
RCB = 240 Ω 4 7.5 11
RCB = 120 Ω 5 10 15

7.7 Typical Characteristics

bq29200 bq29209 D001_SLUSC62.gif Figure 1. ICD Charge Current
bq29200 bq29209 C002_SLUSA52.png Figure 3. Average ICC During Normal Operation Across Operational Temperature
bq29200 bq29209 D002_SLUSC62.gif Figure 2. ICD Discharge Current
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