ZHCSCA0I March   2014  – August 2024 BQ2970 , BQ2971 , BQ2972 , BQ2973

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Descriptions
      1. 5.1.1 Supply Input: BAT
      2. 5.1.2 Cell Negative Connection: VSS
      3. 5.1.3 Voltage Sense Node: V–
      4. 5.1.4 Discharge FET Gate Drive Output: DOUT
      5. 5.1.5 Charge FET Gate Drive Output: COUT
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Characteristics
    6. 6.6 Programmable Fault Detection Thresholds
    7. 6.7 Programmable Fault Detection Timer Ranges
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Timing Charts
    2. 7.2 Test Circuits
    3. 7.3 Test Circuit Diagrams
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Overcharge Status
      3. 8.4.3 Over-Discharge Status
      4. 8.4.4 Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit)
      5. 8.4.5 Charge Overcurrent Status
      6. 8.4.6 0V Charging Function Enabled
      7. 8.4.7 0V Charging Inhibit Function
      8. 8.4.8 Delay Circuit
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Performance Plots
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Documentation
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

9.1 Application Information

The BQ2970 devices are a family of primary protectors used for protection of the battery pack in the application. The application drives two low-side NMOS FETs that are controlled to provide energy to the system loads or interrupt the power in the event of a fault condition.
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