ZHCSF78E June   2016  – April 2019 BQ35100

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Supply Current Static Modes
    6. 6.6  Digital Input and Outputs
    7. 6.7  Power-On Reset
    8. 6.8  LDO Regulator
    9. 6.9  Internal Temperature Sensor
    10. 6.10 Internal Clock Oscillators
    11. 6.11 Integrating ADC (Coulomb Counter)
    12. 6.12 ADC (Temperature and Voltage Measurements)
    13. 6.13 Data Flash Memory
    14. 6.14 I2C-Compatible Interface Timing Characteristics
    15. 6.15 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basic Measurement Systems
        1. 7.3.1.1 Voltage
        2. 7.3.1.2 Temperature
        3. 7.3.1.3 Coulombs
        4. 7.3.1.4 Current
      2. 7.3.2 Battery Gauging
        1. 7.3.2.1 ACCUMULATOR (ACC) Mode
        2. 7.3.2.2 STATE-OF-HEALTH (SOH) Mode
          1. 7.3.2.2.1 Low State-of-Health Alert
        3. 7.3.2.3 END-OF-SERVICE (EOS) Mode
          1. 7.3.2.3.1 Initial EOS Learning
            1. 7.3.2.3.1.1 End-Of-Service Detection
      3. 7.3.3 Power Control
      4. 7.3.4 Battery Condition Warnings
        1. 7.3.4.1 Battery Low Warning
        2. 7.3.4.2 Temperature Low Warning
        3. 7.3.4.3 Temperature High Warning
        4. 7.3.4.4 Battery Low SOH Warning
        5. 7.3.4.5 Battery EOS OCV BAD Warning
      5. 7.3.5 ALERT Signal
      6. 7.3.6 Lifetime Data Collection
      7. 7.3.7 SHA-1 Authentication
      8. 7.3.8 Data Commands
        1. 7.3.8.1 Command Summary
        2. 7.3.8.2 0x00, 0x01 AltManufacturerAccess() and 0x3E, 0x3F AltManufacturerAccess()
        3. 7.3.8.3 Control(): 0x00/0x01
      9. 7.3.9 Communications
        1. 7.3.9.1 I2C Interface
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Preparation for Gauging
        2. 8.2.2.2 Gauging Mode Selection
          1. 8.2.2.2.1 ACCUMULATOR Mode
            1. 8.2.2.2.1.1 STATE-OF-HEALTH (Voltage Correlation) Mode
            2. 8.2.2.2.1.2 END-OF-SERVICE (Resistance Correlation) Mode
        3. 8.2.2.3 Voltage Measurement Selection
        4. 8.2.2.4 Temperature Measurement Selection
        5. 8.2.2.5 Current Sense Resistor Selection
        6. 8.2.2.6 Expected Device Usage Profiles
        7. 8.2.2.7 Using the BQ35100 Fuel Gauge with a Battery and Capacitor in Parallel
          1. 8.2.2.7.1 ACCUMULATOR Mode
          2. 8.2.2.7.2 STATE-OF-HEALTH Mode
          3. 8.2.2.7.3 END-OF-SERVICE Mode
      3. 8.2.3 EOS Mode Load Pulse Synchronization
      4. 8.2.4 Benefits of the BQ35100 Gauge Compared to Alternative Monitoring Techniques
      5. 8.2.5 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Introduction
      2. 10.1.2 Power Supply Decoupling Capacitor
      3. 10.1.3 Capacitors
      4. 10.1.4 Communication Line Protection Components
    2. 10.2 Layout Example
      1. 10.2.1 Ground System
      2. 10.2.2 Kelvin Connections
      3. 10.2.3 Board Offset Considerations
    3. 10.3 ESD Spark Gap
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.2.3 END-OF-SERVICE (EOS) Mode

This mode is suitable for gauging lithium thionyl chloride (Li-SOCl2) cells. The end-of-service (EOS) gauging algorithm uses voltage, current, and temperature data to determine the resistance (R) and rate of change of resistance of the battery. The resistance data is then used to find Depth of Discharge (DOD) = DOD(R). As above, SOH is determined and in turn used to determine the EOS condition.
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