ZHCSDZ3D December   2014  – January 2017

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Voltage
    6. 7.6  Supply Current
    7. 7.7  Power Supply Control
    8. 7.8  Low-Voltage General Purpose I/O (TSx)
    9. 7.9  High-Voltage General Purpose I/O (GPIO0, GPIO1)
    10. 7.10 AFE Power-On Reset
    11. 7.11 Internal 1.8-V LDO
    12. 7.12 Current Wake Comparator
    13. 7.13 Coulomb Counter
    14. 7.14 CC Digital Filter
    15. 7.15 ADC
    16. 7.16 ADC Digital Filter
    17. 7.17 ADC Multiplexer
    18. 7.18 Cell Balancing Support
    19. 7.19 Cell Detach Detection
    20. 7.20 Internal Temperature Sensor
    21. 7.21 NTC Thermistor Measurement Support (ADCx)
    22. 7.22 High-Frequency Oscillator
    23. 7.23 Low-Frequency Oscillator
    24. 7.24 Voltage Reference 1
    25. 7.25 Voltage Reference 2
    26. 7.26 Instruction Flash
    27. 7.27 Data Flash
    28. 7.28 Current Protection Thresholds
    29. 7.29 N-CH FET Drive (CHG, DSG)
    30. 7.30 FUSE Drive (AFEFUSE)
    31. 7.31 Battery Charger Voltage Regulation (VFB)
    32. 7.32 Battery Charger Current Sense (HSRP, HSRN)
    33. 7.33 Battery Charger Precharge Current Sense (HSRP, HSRN)
    34. 7.34 AC Adapter Fault Detect (HSRN, VCC)
    35. 7.35 Battery Charger Overcurrent Detection (V)HSRP, (V)HSRN
    36. 7.36 Battery Charger Undercurrent Detection (V)HSRP, (V)HSRN
    37. 7.37 System Operation Detection (V)HSRN
    38. 7.38 Battery Overvoltage Comparator (VFB)
    39. 7.39 Regulator (REGN)
    40. 7.40 PWM High-Side Driver (HiDRV)
    41. 7.41 PWM Low-Side Driver (LoDRV)
    42. 7.42 PWM Information
    43. 7.43 Charger Power-Up Sequence
    44. 7.44 Thermal Shutdown Comparator
    45. 7.45 SMBus High Voltage I/O
    46. 7.46 SMBus
    47. 7.47 SMBus XL
    48. 7.48 Timing Requirements
    49. 7.49 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Safety Features
      2. 8.3.2  Analog Front End (AFE) Details
        1. 8.3.2.1 Wake Up Comparator
        2. 8.3.2.2 Cell Balancing Support
        3. 8.3.2.3 FET Drive
        4. 8.3.2.4 Fuse Drive
      3. 8.3.3  Charge Controller Details
        1. 8.3.3.1 Precharge Modes
        2. 8.3.3.2 Zero-Volt Charge Support
        3. 8.3.3.3 Charge Termination
      4. 8.3.4  Fuel Gauge and Control Details
        1. 8.3.4.1 Battery Trip Point (BTP)
        2. 8.3.4.2 Lifetime Data Logging Features
      5. 8.3.5  Authentication
      6. 8.3.6  LED Display
      7. 8.3.7  Internal Temperature Sensor
      8. 8.3.8  External Temperature Sensor Support
      9. 8.3.9  High Frequency Oscillator
      10. 8.3.10 Communications
        1. 8.3.10.1 SMBus On and Off State
        2. 8.3.10.2 SBS Commands
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input Capacitor
        3. 9.2.2.3 Output Capacitor
        4. 9.2.2.4 Power MOSFETs Selection
        5. 9.2.2.5 Input Filter Design
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 PCB Layout
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 相关文档　
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over-operating free-air temperature range (unless otherwise noted)(1)
MIN TYP MAX UNIT
Supply voltage range, VSupply BAT, VCC, PBI –0.3 30 V
REGN –0.3 7 V
Input voltage range, VIN ACP, SMBC, SMBD, GPIO0, GPIO1 –0.3 30 V
TS1, TS2, TS3, TS4 –0.3 VREG + 0.3 V
SRP, SRN –0.3 0.3 V
HSRP, HSRN –0.3 30 V
PH –0.3 32 V
VFB –0.3 16 V
VC4 VC3 – 0.3 VC3 + 8.5 V, or VSS + 30 V
VC3 VC2 – 0.3 VC2 + 8.5 V, or VSS + 30 V
VC2 VC1 – 0.3 VC1 + 8.5 V, or VSS + 30 V
VC1 VSS – 0.3 VSS + 8.5 V, or VSS + 30 V
Output voltage range, VO CHG, DSG –0.3 32 V
HIDRV, BTST, ACFET –0.3 36 V
LODRV –0.3 7 V
AFEFUSE –0.3 30 V
Maximum VSS current, ISS 50 mA
Functional Temperature, TFUNC –40 110 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Rating HBM(1) ±2000 V
CDM(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN NOM MAX UNIT
VSupply Supply voltage BAT, VCC, PBI 2.2 26 V
ACFET, BTST 0 35 V
REGN 0 6.5 V
VSHUTDOWN– Shutdown voltage VACP < VSHUTDOWN– 1.8 2.0 2.2 V
VSHUTDOWN+ Start-up voltage VACP > VSHUTDOWN– + VHYS 2.05 2.25 2.45 V
VHYS Shutdown voltage hysteresis VSHUTDOWN+ – VSHUTDOWN– 250 mV
VIN Input voltage range ACP, SMBC, SMBD, GPIO0, GPIO1 26 V
TSx VREG
SRP, SRN –0 .2 0.2
HSRP, HSRN –0 .5 0.5
PH –2 VACP
VFB 0 14
VC4 VVC3 VVC3 + 5
VC3 VVC2 VVC2 + 5
VC2 VVC1 VVC1 + 5
VC1 VVSS VVSS + 5
VO Output voltage range CHG, DSG, AFEFUSE 26 V
HIDRV 35 V
LODRV 0 6.5 V
CPBI External PBI capacitor 2.2 µF
TOPR Operating temperature –40 85 °C

7.4 Thermal Information

THERMAL METRIC(1) bq40z60 UNIT
RHB (VQFN)
32 PINS
RθJA, High K Junction-to-ambient thermal resistance 36 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 31.5 °C/W
RθJB Junction-to-board thermal resistance 8 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 7.9 °C/W
RθJCbot Junction-to-case(bottom) thermal resistance 2.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Supply Voltage

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC Device Operating Range Operation with charger enabled 4.0 25 V
Operation with charger disabled 2.5 25
VCC-UV Undervoltage lock out VCC falling 2.2 2.45 V

7.6 Supply Current

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INORMAL NORMAL mode(1) CPU = ACTIVE, HFO = ON, ADC_FILTER = ON, CC_FILTER = ON, LFO = ON, REG18 = ON, CHG = ON, DSG = ON, ADC = ON, CC = ON, Charger Enabled, No Communication 1250 1850 µA
CPU = HALT, HFO = ON, ADC_FILTER = ON, CC_FILTER = ON, LFO = ON, REG18 = ON, CHG = ON, DSG = ON, ADC = ON, CC = ON, Charger Disabled, No Communication 310 445
ISLEEP SLEEP mode(1) CPU = HALT, HFO = ON, ADC_FILTER = OFF, CC_FILTER = OFF, LFO = ON, REG18 = ON, CHG = ON, DSG = ON, ADC = OFF, CC = OFF, Charger Disabled, No Communication 122 183 µA
CPU = HALT, HFO = OFF, ADC_FILTER = OFF, CC_FILTER = OFF, LFO = ON, REG18 = ON, CHG = ON, DSG = ON, ADC = OFF, CC = OFF, Charger Disabled, No Communication 92 138
CPU = HALT, HFO = ON, ADC_FILTER = OFF, CC_FILTER = OFF, LFO = ON, REG18 = ON, CHG = OFF, DSG = OFF, ADC = OFF, CC = OFF, Charger Disabled, No Communication 82 128
CPU = HALT, HFO = OFF, ADC_FILTER = OFF, CC_FILTER = OFF, LFO = ON, REG18 = ON, CHG = OFF, DSG = OFF, ADC = OFF, CC = OFF, Charger Disabled, No Communication 52 83
ISHUTDOWN SHUTDOWN mode CPU = HALT, HFO = OFF, ADC_FILTER = OFF, CC_FILTER = OFF, LFO = OFF, REG18 = OFF, CHG = OFF, DSG = OFF, ADC = OFF, CC = OFF, Charger Disabled, No Communication 0.5 2 µA
(1) VCC ≤ 20 V when CHG = ON and DSG = ON

7.7 Power Supply Control

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VSWITCHOVER– BAT to VCC switchover voltage VBAT < VSWITCHOVER– 2.0 2.1 2.2 V
VSWITCHOVER+ VCC to BAT switchover voltage VBAT > VSWITCHOVER– + VHYS 3.0 3.1 3.2 V
VHYS Switchover voltage hysteresis VSWITCHOVER+ – VSWITCHOVER– 1000 mV
ILKG Input leakage current BAT pin, BAT = 0 V, VCC = 25 V 1 µA
VCC pin, BAT = 25 V, VCC = 0 V 1
BAT and VCC pins, BAT = 0 V, VCC = 0 V, PBI = 25 V 1
RPD Internal pulldown resistance ACP 30 40 50 kΩ

7.8 Low-Voltage General Purpose I/O (TSx)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input 0.65 × VREG V
VIL Low-level input 0.35 × VREG V
VOH Output voltage high IOH = –1.0 mA 0.75 × VREG V
IOH = –10 µA
VOL Output voltage low IOL = 1.0 mA 0.2 × VREG V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA

7.9 High-Voltage General Purpose I/O (GPIO0, GPIO1)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input 1.3 V
VIL Low-level input 0.55 V
VOH Output voltage high VBAT > 5.5 V, IOH = –0 µA 3.5 V
VBAT > 5.5 V, IOH = –10 µA 1.8
VOL Output voltage low IOL = 1.5 mA 0.4 V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA
RO Output reverse resistance Between GPIO0/1 and PBI 5 kΩ

7.10 AFE Power-On Reset

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREGIT– Negative-going voltage input VREG 1.51 1.55 1.59 V
VHYS Power-on reset hysteresis VREGIT+ – VREGIT– 70 100 130 mV
tRST Power-on reset time 200 300 400 µs

7.11 Internal 1.8-V LDO

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREG Regulator voltage 1.6 1.8 2.0 V
ΔVO(TEMP) Regulator output over temperature ΔVREG/ΔTA, IREG = 10 mA ±0.25%
ΔVO(LINE) Line regulation ΔVREG/ΔVBAT, VBAT = 10 mA –0 .6% 0.5%
ΔVO(LOAD) Load regulation ΔVREG/ΔIREG, IREG = 0 mA to 10 mA –1.5% 1.5%
IREG Regulator output current limit VREG = 0.9 × VREG(NOM), VIN > 2.2 V 20 mA
ISC Regulator short-circuit current limit VREG = 0 × VREG(NOM) 25 40 50 mA
PSRRREG Power supply rejection ratio ΔVBAT/ΔVREG, IREG = 10 mA ,VIN > 2.5 V, f = 10 Hz 40 dB
VSLEW Slew rate enhancement voltage threshold 1.58 1.65 V

7.12 Current Wake Comparator

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VWAKE Wake voltage threshold VWAKE = VSRP – VSRN ±0.3 ±0.625 ±0.9 mV
VWAKE = VSRP – VSRN ±0.6 ±1.25 ±1.8
VWAKE = VSRP – VSRN ±1.2 ±2.5 ±3.6
VWAKE = VSRP – VSRN ±2.4 ±5.0 ±7.2
VWAKE(DRIFT) Temperature drift of VWAKE accuracy 0.5% °C
tWAKE Time from application of current to wake 0.25 0.5 ms
tWAKE(SU) Wake comparator startup time 500 1000 µs

7.13 Coulomb Counter(1)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range –0.1 0.1 V
Full scale range –VREF1/10 VREF1/10 V
Integral nonlinearity(2) 16-bit, Best fit over input voltage range ±5.2 ±22.3 LSB
Offset error 16-bit, Post-calibration ±5 ±10 µV
Offset error drift 15-bit + sign, Post-calibration 0.2 0.3 µV/°C
Gain error 15-bit + sign, Over input voltage range ±0.2% ±0.8% FSR(3)
Gain error drift 15-bit + sign, Over input voltage range 150 PPM/°C
Effective input resistance 2.5 MΩ
(1) Coulomb counter electrical specifications are assured when battery charging function is disabled.
(2) 1 LSB = VREF1/(10 × 2N) = 1.215/(10 × 215) = 3.71 µV
(3) Full-scale reference

7.14 CC Digital Filter

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Conversion time Single conversion 250 ms
Effective resolution Single conversion 15 Bits

7.15 ADC(1)

Over-operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range Internal reference (VREF1) –0.2 1 V
External reference (VREG) –0.2 0.8 × VREG
Full scale range VFS = VREF1 or VREG –VFS VFS V
Integral nonlinearity(2) 16-bit, Best fit, –0.1 V to 0.8 × VREF1 ±6.6 LSB
16-bit, Best fit, –0.2 V to –0.1 V ±13.1
Offset error(3) 16-bit, Post-calibration, VFS = VREF1 ±67 ±157 µV
Offset error drift 16-bit, Post-calibration, VFS = VREF1 0.6 3 µV/°C
Gain error 16-bit, –0.1 V to 0.8 × VFS ±0.2% ±0.8% FSR
Gain error drift 16-bit, –0.1 V to 0.8 × VFS 150 PPM/°C
Effective input resistance 8 MΩ
(1) ADC electrical specifications are assured when battery charging function is disabled.
(2) 1 LSB = VREF1/(2N) = 1.225/(215) = 37.4 µV (when ADCTL[SPEED1, SPEED0] = 0, 0)
(3) For VC1–VSS, VC2–VC1, VC3–VC2, VC3–VSS, ACP–VSS, and VREF1/2, the offset error is multiplied by (1/ADC multiplexer scaling factor (K)).

7.16 ADC Digital Filter

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Conversion time ADCTL[SPEED1, SPEED0] = 0, 0 31.25 ms
ADCTL[SPEED1, SPEED0] = 0, 1 15.63
ADCTL[SPEED1, SPEED0] = 1, 0 7.81
ADCTL[SPEED1, SPEED0] = 1, 1 1.95
Resolution No missing codes, ADCTL[SPEED1, SPEED0] = 0, 0 16 Bits
Effective resolution With sign, ADCTL[SPEED1, SPEED0] = 0, 0 14 15 Bits
With sign, ADCTL[SPEED1, SPEED0] = 0, 1 13 14
With sign, ADCTL[SPEED1, SPEED0] = 1, 0 11 12
With sign, ADCTL[SPEED1, SPEED0] = 1, 1 9 10

7.17 ADC Multiplexer

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
K Scaling factor VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3 0.1980 0.2000 0.2020 —
VC4–VSS, ACP–VSS 0.049 0.050 0.051
VREF2 0.490 0.500 0.510
HSRN–VSS 0.049 0.050 0.051
VIN Input voltage range VC4–VSS, ACP–VSS –0.2 20 V
TSx –0.2 0.8 × VREF1
TSx –0.2 0.8 × VREG
ILKG Input leakage current VC1, VC2, VC3, VC4, cell balancing off, cell detach detection off, ADC multiplexer off 1 µA

7.18 Cell Balancing Support

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RCB Internal cell balance resistance RDS(ON) for internal FET switch at 2 V < VDS < 4 V 200 Ω

7.19 Cell Detach Detection

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICD Internal cell detach check current VCx > VSS + 0.8 V 30 50 70 µA

7.20 Internal Temperature Sensor

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VTEMP Internal temperature sensor voltage drift VTEMPP –1.9 –2.0 –2.1 mV/°C
VTEMPP – VTEMPN, assured by design 0.177 0.178 0.179

7.21 NTC Thermistor Measurement Support (ADCx)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RNTC(PU) Internal pullup resistance 14.4 18 21.6 kΩ
RNTC(DRIFT) Resistance drift over temperature –360 –280 –200 PPM/°C

7.22 High-Frequency Oscillator

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fHFO Operating frequency 16.78 MHz
fHFO(ERR) Frequency error TA = –20°C to 70°C, includes frequency drift –2.5% ±0.25% 2.5%
TA = –40°C to 85°C, includes frequency drift –3.5% ±0.25% 3.5%
tHFO(SU) Start-up time TA = –20°C to 85°C, CLKCTL[HFRAMP] = 1, oscillator frequency within +/–3% of nominal 4 ms
CLKCTL[HFRAMP] = 0, oscillator frequency within +/–3% of nominal 100 µs

7.23 Low-Frequency Oscillator

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fLFO Operating frequency 262.144 kHz
fLFO(ERR) Frequency error TA = –20°C to 70°C, includes frequency drift –1.5% ±0.25% 1.5%
TA = –40°C to 85°C, includes frequency drift –2.5 ±0.25 2.5
fLFO(FAIL) Failure detection frequency 30 80 100 kHz

7.24 Voltage Reference 1

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF1 Internal reference voltage TA = 25°C, after trim 1.21 1.215 1.22 V
VREF1(DRIFT) Internal reference voltage drift TA = 0°C to 60°C, after trim ±50 PPM/°C
TA = –40°C to 85°C, after trim ±80

7.25 Voltage Reference 2

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF2 Internal reference voltage TA = 25°C, after trim 1.22 1.225 1.23 V
VREF2(DRIFT) Internal reference voltage drift TA = 0°C to 60°C, after trim ±50 PPM/°C
TA = –40°C to 85°C, after trim ±80

7.26 Instruction Flash

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write cycles 1000 Cycles
tPROGWORD Word programming time TA = –40°C to 85°C 40 µs
tMASSERASE Mass-erase time TA = –40°C to 85°C 40 ms
tPAGEERASE Page-erase time TA = –40°C to 85°C 40 ms
IFLASHREAD Flash-read current TA = –40°C to 85°C 2 mA
IFLASHWRITE Flash-write current TA = –40°C to 85°C 5 mA
IFLASHERASE Flash-erase current TA = –40°C to 85°C 15 mA

7.27 Data Flash

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write cycles 20000 Cycles
tPROGWORD Word programming time TA = –40°C to 85°C 40 µs
tMASSERASE Mass-erase time TA = –40°C to 85°C 40 ms
tPAGEERASE Page-erase time TA = –40°C to 85°C 40 ms
IFLASHREAD Flash-read current TA = –40°C to 85°C 1 mA
IFLASHWRITE Flash-write current TA = –40°C to 85°C 5 mA
IFLASHERASE Flash-erase current TA = –40°C to 85°C 15 mA

7.28 Current Protection Thresholds

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOCD OCD detection threshold voltage range VOCD = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –16.6 –100 mV
VOCD = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –8.3 –50
ΔVOCD OCD detection threshold voltage program step VOCD = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –5.56 mV
VOCD = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –2.78
VSCC SCC detection threshold voltage range VSCC = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 44.4 200 mV
VSCC = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 22.2 100
ΔVSCC SCC detection threshold voltage program step VSCC = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 22.2 mV
VSCC = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 11.1
VSCD1 SCD1 detection threshold voltage range VSCD1 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –44.4 –200 mV
VSCD1 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –22.2 –100
ΔVSCD1 SCD1 detection threshold voltage program step VSCD1 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –22.2 mV
VSCD1 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –11.1
VSCD2 SCD2 detection threshold voltage range VSCD2 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –44.4 –200 mV
VSCD2 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –22.2 –100
ΔVSCD2 SCD2 detection threshold voltage program step VSCD2 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 1 –22.2 mV
VSCD2 = VSRP – VSRN, PROTECTION_CONTROL[RSNS] = 0 –11.1
VOFFSET OCD, SCC, and SCDx offset error Post-trim –2.5 2.5 mV
VSCALE OCD, SCC, and SCDx scale error No trim –10% 10%
Post-trim –5% 5%

7.29 N-CH FET Drive (CHG, DSG)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output voltage ratio RatioDSG = (VDSG – VBAT)/VBAT, 2.2 V < VBAT < 4.07 V, 10 MΩ between HSRN and DSG 2.133 2.333 2.533 —
RatioCHG = (VCHG – VBAT)/VBAT, 2.2 V < VBAT < 4.07 V, 10 MΩ between BAT and CHG 2.133 2.333 2.533
RatioACFET = (VACFET – VBAT)/VBAT, 2.2 V < VBAT < 4.07 V, 10 MΩ between ACP and ACFET 2.133 2.333 2.533
V(FETON) Output voltage, CHG and DSG on VDSG(ON) = VDSG – VBAT, VBAT ≥ 4.07 V, 10 MΩ between VHSRN and DSG, VBAT = 18 V 9.0 9.5 10 V
VCHG(ON) = VCHG – VBAT, VBAT ≥ 4.07 V, 10 MΩ between BAT and CHG, VBAT = 18 V 9.0 9.5 10
ACFET VACFET(ON) = VACFET – VBAT, VBAT ≥ 4.07 V, 10 MΩ between ACP and ACFET, VBAT = 18 V 9.0 9.5 10
V(FETOFF) Output voltage, CHG and DSG off VDSG(OFF) = VDSG – VACP, 10 MΩ between HSRN and DSG –0.4 0.4 V
VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG –0.4 0.4
ACFET VACFET(OFF) = VACFET – VACP, VBAT ≥ 4.07 V, 10 MΩ between ACP and ACFET, VBAT = 18 V –0.4 0.4
tR Rise time VDSG from 0% to 35% VDSG(ON)(TYP), VACP ≥ 2.2 V, CL = 4.7 nF between DSG and VHSRN, 5.1 kΩ between DSG and CL, 10 MΩ between VHSRN and DSG 200 500 µs
VCHG from 0% to 35% VCHG(ON)(TYP), VACP ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 200 500
VACFET from 0% to 35% VACFET(ON)(TYP), VACP ≥ 2.2 V, CL = 4.7 nF between ACFET and ACP, 5.1 kΩ between CHG and CL, 10 MΩ between ACP and ACFET 200 500
tF Fall time VDSG from VDSG(ON)(TYP) to 1 V, VACP ≥ 2.2 V, CL = 4.7 nF between DSG and ACP, 5.1 kΩ between DSG and CL, 10 MΩ between ACP and DSG 40 300 µs
VCHG from VCHG(ON)(TYP) to 1 V, VACP ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 40 200
VACFET from VACFET(ON)(TYP) to 1 V, VACP ≥ 2.2 V, CL = 4.7 nF between ACFET and ACP, 5.1 kΩ between CHG and CL, 10 MΩ between ACP and ACFET 40 200

7.30 FUSE Drive (AFEFUSE)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH Output voltage high VBAT ≥ 8 V, CL = 1 nF, IAFEFUSE = 0 µA 6 7 8.65 V
VBAT < 8 V, CL = 1 nF, IAFEFUSE = 0 µA VBAT – 0.1 VBAT
VIH High-level input 1.5 2.0 2.5 V
IAFEFUSE(PU) Internal pullup current VBAT ≥ 8 V, VAFEFUSE = VSS 150 330 nA
RAFEFUSE Output impedance 2 2.6 3.2 kΩ
CIN Input capacitance 5 pF
tDELAY Fuse trip detection delay 128 256 µs
tRISE Fuse output rise time VBAT ≥ 8 V, CL = 1 nF, VOH = 0 V to 5 V 5 20 µs

7.31 Battery Charger Voltage Regulation (VFB)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VFB Regulation range Based on internal DAC reference setting 0.61 1.22 V
VFBACC Voltage feedback accuracy VFB = 1.22 V –2% 2%
VFB(STEPS) Programmable regulation steps 2.5 mV
RVFB Total feedback resistor divider range 500 700 kΩ

7.32 Battery Charger Current Sense (HSRP, HSRN)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN(Normal range) Differential Input range DAC range for current measurement 2 100 mV
VACC Measurement accuracy VHSRP – VHSRN = 50 mV, RSense= 10 mΩ –5% 5%

7.33 Battery Charger Precharge Current Sense (HSRP, HSRN)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN(Normal range) Differential Input range DAC range for current measurement 2 20 mV
VACC Measurement accuracy VHSRP – VHSRN = 2 mV, RSense= 10 mΩ
(VHSRN > 2.3 V)		 –70% 70%

7.34 AC Adapter Fault Detect (HSRN, VCC)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VHSRN – VCC AC adapter input fault detect Battery > AC adapter input (Falling) 150 225 300 mV
VHys Recovery hysteresis AC adapter input > Battery (Rising) 50 100 150 mV

7.35 Battery Charger Overcurrent Detection (V)HSRP, (V)HSRN

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IOC(max) Charger overcurrent threshold Charging current as a percentage of max sense voltage range 180 200 mV
IOC(min) Charger overcurrent threshold Minimum charging overcurrent detected 45 55 mV

7.36 Battery Charger Undercurrent Detection (V)HSRP, (V)HSRN

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IUC(Detect) Detect under current for negative inductor current VHSRP – VHSRN < 0 mV, for negative inductor current, VHSRP > 2.3 V 1 5 16 mV
IUC(Non-synch) Minimum sense voltage to enter non-synchronous mode 1.7 mV

7.37 System Operation Detection (V)HSRN

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VHSRN Input voltage for operation VHSRN Falling 2.05 2.15 2.25 V
VHys Recovery hysteresis VHSRN Rising 100 150 200 mV

7.38 Battery Overvoltage Comparator (VFB)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOV(max) Battery over-voltage detection VFB > Set value (Rising) 106%
VOV(Recovery) Battery over-voltage recovery VFB < VOV (Falling) 103%

7.39 Regulator (REGN)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VLODRV Gate drive for low side charger FET VCC > 10 V, ILoad = 0 to 60 mA 5.7 6.0 6.3 V
I SC Short circuit current limit VLODRV = 0 V 60 mA
VREGN Power good indicator VREGN Rising 3.6 3.68 3.75 V
VHys Hysteresis VREGN Falling 240 260 280 mV

7.40 PWM High-Side Driver (HiDRV)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RON Driver turn ON resistance VBTST – VPH ≥ 5.5 V 6.0 8.6 Ω
ROFF Driver turn OFF resistance VFB < VOV (Falling) 2.5 3.3 Ω
VBOOTSTRAP Bootstrap refresh comparator VCC = 4 V to 6 V 2.6 2.9 V
VCC > 6 V 3.9 4.1 V

7.41 PWM Low-Side Driver (LoDRV)

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RON Driver turn ON resistance VREGN – VPGND ≥ 5.5 V 5.2 7.6 Ω
ROFF Driver turn OFF resistance VFB < VOV (Falling) 1.9 2.4 Ω

7.42 PWM Information

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDEADTIME Deadtime between FET driver output switching 30 ns
Duty cycle 99.5%
fSW PWM switching frequency 0.8 1.0 1.1 MHz

7.43 Charger Power-Up Sequence

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDELAY Power-up sequence 8 ms
tSS(STEPS) Soft start steps 8
tSS(STEP TIME) Soft start time 2 ms

7.44 Thermal Shutdown Comparator

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TSHUTDOWN 135 145 C
THys 12 C

7.45 SMBus High Voltage I/O

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH Input voltage high SMBC, SMBD, VREG = 1.8 V 1.3 V
VIL Input voltage low SMBC, SMBD, VREG = 1.8 V 0.8 V
VOL Output low voltage SMBC, SMBD, VREG = 1.8 V, IOL = 1.5 mA 0.4 V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA
RPD pulldown resistance 0.7 1.0 1.3 MΩ

7.46 SMBus

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSMB SMBus operating frequency SLAVE mode, SMBC 50% duty cycle 10 100 kHz
fMAS SMBus master clock frequency MASTER mode, no clock low slave extend 51.2 kHz
tBUF Bus free time between start and stop 4.7 µs
tHD(START) Hold time after (repeated) start 4.0 µs
tSU(START) Repeated start setup time 4.7 µs
tSU(STOP) Stop setup time 4.0 µs
tHD(DATA) Data hold time 300 ns
tSU(DATA) Data setup time 250 ns
tTIMEOUT Error signal detect time 25 35 ms
tLOW Clock low period 4.7 µs
tHIGH Clock high period 4.0 50 µs
tR Clock rise time 10% to 90% 1000 ns
tF Clock fall time 90% to 10% 300 ns
tLOW(SEXT) Cumulative clock low slave extend time 25 ms
tLOW(MEXT) Cumulative clock low master extend time 10 ms

7.47 SMBus XL

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSMBXL SMBus XL operating frequency SLAVE mode 40 400 kHz
tBUF Bus free time between start and stop 4.7 µs
tHD(START) Hold time after (repeated) start 4.0 µs
tSU(START) Repeated start setup time 4.7 µs
tSU(STOP) Stop setup time 4.0 µs
tTIMEOUT Error signal detect time 5 20 ms
tLOW Clock low period 20 µs
tHIGH Clock high period 20 µs

7.48 Timing Requirements

Typical values stated where TA = 25°C and VCC = 10.8 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN TYP MAX UNIT
CURRENT PROTECTION TIMING
tOCD OCD detection delay time 1 31 ms
ΔtOCD OCD detection delay time program step 2 ms
tSCC SCC detection delay time 0 915 µs
ΔtSCC SCC detection delay time program step 61 µs
tSCD1 SCD1 detection delay time PROTECTION_CONTROL[SCDDx2] = 0 0 915 µs
PROTECTION_CONTROL[SCDDx2] = 1 0 1850
ΔtSCD1 SCD1 detection delay time program step PROTECTION_CONTROL[SCDDx2] = 0 61 µs
PROTECTION_CONTROL[SCDDx2] = 1 121
tSCD2 SCD2 detection delay time PROTECTION_CONTROL[SCDDx2] = 0 0 458 µs
PROTECTION_CONTROL[SCDDx2] = 1 0 915
ΔtSCD2 SCD2 detection delay time program step PROTECTION_CONTROL[SCDDx2] = 0 30.5 µs
PROTECTION_CONTROL[SCDDx2] = 1 61
tDETECT Current fault detect time VSRP – VSRN = VT – 3 mV for OCD, SCD1, and SC2, VSRP – VSRN = VT + 3 mV for SCC 160 µs
tACC Current fault delay time accuracy Max delay setting –10% 10%

7.49 Typical Characteristics

bq40z60 bq40z60_TypSwFreq.png
Figure 1. Charger Switching Frequency Across Temperature
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