米6体育平台手机版

ZHCSAX2F July 2012 – June 2017

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

YFP|28

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings⁽²⁾⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Input voltage	RECT, COMM1, COMM2, BAT, CHG, CLAMP1, CLAMP2	–0.3	20	V
	AC1, AC2	–0.8	20	V
	AD, AD-EN	–0.3	30	V
	BOOT1, BOOT2	–0.3	26	V
	EN2, TERM, FOD, TS/CTRL, ILIM	–0.3	7	V
Input current	AC1, AC2		2	A(RMS)
Output current	BAT		1.5	A
Output sink current	CHG		15	mA
Output sink current	COMM1, COMM2		1.0	A
Junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–65	150	°C

(1) All voltages are with respect to the VSS terminal, unless otherwise noted.

(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

				MIN	MAX	UNIT
V_IN	Input voltage range	RECT		4	10	V
I_IN	Input current	Internal Rectifier (voltage monitored at RECT node)			1.5	A
I_BAT	BAT(output) current	BAT	bq51050B, bq51051B		1.5	A
I_BAT	BAT(output) current	BAT	bq51052B		0.8	A
V_AD	Adapter voltage	AD			15	V
I_AD-EN	Sink current	AD-EN			1	mA
I_COMM	COMM sink current	COMM			500	mA
T_J	Junction temperature			0	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		bq51050B, bq51051B, bq51052B		UNIT
		YFP (DSGBA)	RHL (VQFN)
		28 PINS	20 PINS
R_θJA	Junction-to-ambient thermal resistance	58.9	37.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	0.2	35.5	°C/W
R_θJB	Junction-to-board thermal resistance	9.1	13.6	°C/W
ψ_JT	Junction-to-top characterization parameter	1.4	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	8.9	13.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	2.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

Over junction temperature range 0°C ≤ T_J ≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_UVLO	Undervoltage lockout	V_RECT: 0 V → 3 V		2.6	2.7	2.8	V
V_HYS-UVLO	Hysteresis on UVLO	V_RECT: 3 V → 2 V			250		mV
V_OVP	Input overvoltage threshold	V_RECT: 5 V → 16 V		14.5	15	15.5	V
V_HYS-OVP	Hysteresis on OVP	V_RECT: 16 V → 5 V			150		mV
V_RECT-REG⁽¹⁾	V_RECT regulation voltage				5.11		V
I_LOAD	I_LOAD Hysteresis for dynamic V_RECT thresholds as a % of I_ILIM	I_LOAD falling			5%
V_TRACK	Tracking V_RECT regulation above V_BAT	V_BAT = 3.5 V, I_BAT ≥ 500 mA			300		mV
V_RECT-REV	Rectifier reverse voltage protection at the BAT(output)	V_RECT-REV = V_BAT – V_RECT, V_BAT = 10 V			8.3	9	V
V_RECT-DPM	Rectifier undervoltage protection, restricts I_BAT at V_RECT-DPM			3	3.1	3.2	V
QUIESCENT CURRENT
I_RECT	Active chip quiescent current consumption from RECT (when wireless power is present)	I_BAT = 0 mA, 0°C ≤ T_J ≤ 85°C			8	10	mA
I_RECT		I_BAT = 300 mA, 0°C ≤ T_J ≤ 85°C			2	3	mA
I_Q	Quiescent current at the BAT when wireless power is disabled (Standby)	V_BAT = 4.2 V, 0°C ≤ T_J ≤ 85°C			12	20	µA
ILIM SHORT PROTECTION
R_ILIM-SHORT	Highest value of ILIM resistor considered a fault (short). Monitored for I_BAT > I_{LIM_SHORT, OK}	R_ILIM: 200 Ω → 50 Ω. I_BAT latches off, cycle power to reset	bq51050B, bq51051B			120	Ω
R_ILIM-SHORT			bq51052B			235	Ω
t_DGL-Short	Deglitch time transition from ILIM short to I_BAT disable				1		ms
I_{LIM_SHORT, OK}	I_LIM-SHORT,OK enables the I_ILIM short comparator when I_BAT is greater than this value	I_BAT: 0 mA → 200 mA	bq51050B, bq51051B	110	145	165	mA
I_{LIM_SHORT, OK}		I_BAT: 0 mA → 200 mA	bq51052B	55	75	95	mA
I_{LIM-SHORT, OK HYSTERESIS}	Hysteresis for I_LIM-SHORT,OK comparator	I_BAT: 200 mA → 0 mA			30		mA
I_BAT-CL	Maximum output current limit	Maximum I_BAT that will be delivered for up to 1 ms when ILIM is shorted to PGND				2.4	A
BATTERY SHORT PROTECTION
V_BAT(SC)	BAT pin short-circuit detection/precharge threshold	V_BAT: 3 V → 0.5 V, no deglitch		0.75	0.8	0.85	V
V_BAT(SC)-HYS	V_BAT_(SC) hysteresis	V_BAT: 0.5 V → 3 V			100		mV
I_BAT(SC)	Source current to BAT pin during short-circuit detection	V_BAT = 0 V	bq51050B, bq51051B	12	18	22	mA
I_BAT(SC)	Source current to BAT pin during short-circuit detection	V_BAT = 0 V	bq51052B	12	18	25	mA
VOLTAGE REGULATION PHASE
I_EndTrack	I_BAT threshold during Voltge Regulation Phase that changes V_RECT level from V_BAT+V_TRACK to V_RECT-REG	I_BAT decreasing	bq51050B, bq51051B		0.35 * I_BULK		mA
I_EndTrack		I_BAT decreasing	bq51052B		0.05 * I_BULK		mA
PRECHARGE
V_LOWV	Precharge to fast charge transition threshold	V_BAT: 2 V → 4 V		2.9	3.0	3.1	V
K_PRECHG	Precharge current as a percentage of the programmed charge current setting (I_BULK)	V_LOWV > V_BAT > V_BAT(SC) I_BAT: 50 mA – 300 mA		18%	20%	23%	V
I_PRECHG	I_BAT during precharge	V_LOWV > V_BAT > V_BAT(SC), I_BULK = 500 mA			100		mA
t_precharge	Precharge time-out	V_BAT(SC) < V_BAT < V_LOWV			30		min
t_DGL1(LOWV)	Deglitch time, pre- to fast-charge				25		ms
t_DGL2(LOWV)	Deglitch time, fast- to precharge				25		ms
OUTPUT
V_OREG	Regulated BAT(output) voltage	I_BAT = 1000 mA	bq51050B	4.16	4.20	4.22	V
			bq51051B	4.30	4.35	4.37
			bq51052B	4.36	4.40	4.44
V_DO	Drop-out voltage, RECT to BAT	I_BAT = 1 A			110	190	mV
K_ILIM	Current programming factor	R_LIM = K_ILIM / I_IBULK(500 mA - 1.5 A)	bq51050B, bq51051B	303	314	321	AΩ
K_ILIM	Current programming factor	R_LIM = K_ILIM / I_IBULK(500 mA - 1.0 A)	bq51052B	303	314	321	AΩ
I_BULK	Battery charging current limits	K_ILIM 303 to 321	bq51050B, bq51051B	500		1,500	mA
I_BULK	Battery charging current limits	K_ILIM 303 to 321	bq51052B	500		1,000	mA
t_fast-charge	Fast-charge timer	V_LOWV < V_BAT < V_BAT-REG			10		hours
I_BAT-R	Battery charge current limit programming range					1500	mA
I_COMM-CL	Current limit during communication			330	390	420	mA
TERMINATION
K_TERM	Programmable termination current as a percentage of I_IBULK	R_TERM = %I_IBULK x K_TERM (I_BULK = 500 mA)		200	240	280	Ω/%
I_TERM-Th	Termination current from BAT, defined with K_TERM, as the current that terminates the charge cycle	I_BAT decreasing, R_TERM = 2.4k Ω, I_BULK = 1000 mA			100		mA
I_TERM	Constant current at the TERM pin to bias the termination reference			40	50	55	µA
V_RECH	Recharge threshold	bq51050B		V_BAT-REG –135mV	V_BAT-REG –110mV	V_BAT-REG –90mV	V
		bq51051B		V_BAT-REG –125mV	V_BAT-REG –95mV	V_BAT-REG –70mV	V
		bq51052B		V_BAT-REG –125mV	V_BAT-REG –95mV	V_BAT-REG –70mV
I_Termination	Termination current setting limits			120			mA
TS / CTRL FUNCTIONALITY
V_TSB	Internal TS bias voltage (V_TS is the voltage at the TS/CTRL pin, V_TSB is the internal bias voltage)	I_TSB< 100 µA (periodically driven see t_TS/CTRL-Meas)		2	2.2	2.4	V
V_0C-R	Rising threshold	V_TS: 50% → 60%		57	58.7	60	%V_TSB
V_0C-Hyst	Hysteresis on 0°C Comparator	V_TS: 60% → 50%			2.4		%V_TSB
V_10C	Rising threshold	V_TS: 40% → 50%		46	47.8	49	%V_TSB
V_10C-Hyst	Hysteresis on 10°C Comparator	V_TS: 50% → 40%			2		%V_TSB
V_45C	Falling threshold	V_TS: 25% → 15%		18	19.6	21	%V_TSB
V_45C-Hyst	Hysteresis on 45°C Comparator	V_TS: 15% → 25%			3		%V_TSB
V_60C	Falling threshold	V_TS: 20% → 5%		12	13.1	14	%V_TSB
V_60C-Hyst	Hysteresis on 60°C Comparator	V_TS: 5% → 20%			1		%V_TSB
I_45C	I_BULK reduction percentage at 45°C (in full JEITA mode - N/A for bq51052B)	V_TS: 25% → 15%, I_BAT = I_BULK		45%	50%	55%
V_O-J	Voltage regulation during JEITA temperature range	bq51050B			4.06		V
		bq51051B			4.2
		bq51052B			4.2
V_CTRL-HI	Voltage on CTRL pin for a high			0.2		5	V
V_CTRL-LOW	Voltage on CTRL pin for a low			0		0.1	V
t_TS/CTRL-Meas	Time period of TS/CTRL measurements (when V_TSB is being driven internally)	TS bias voltage is only driven when communication packets are sent			24		ms
t_TS-Deglitch	Deglitch time for all TS comparators				10		ms
NTC-Pullup	Pullup resistor for the NTC network. Pulled up to the TS bias LDO.			18	20	22	kΩ
NTC-R_NOM	Nominal resistance requirement at 25°C of the NTC resistor				10		kΩ
NTC-Beta	Beta requirement for accurate temperature sensing through the above specified thresholds				3380		Ω
THERMAL PROTECTION
T_J-SD	Thermal shutdown temperature				155		°C
T_J-Hys	Thermal shutdown hysteresis				20		°C
OUTPUT LOGIC LEVELS ON CHG
V_OL	Open-drain CHG pin	I_SINK = 5 mA				500	mV
I_OFF,CHG	CHG leakage current when disabled	V_CHG = 20 V, 0°C ≤ T_J ≤ 85°C				1	µA
COMM PIN
R_DS-ON(COMM)	COMM1 and COMM2	V_RECT = 2.6 V			1		Ω
f_COMM	Signaling frequency on COMM pin				2		kb/s
I_OFF,COMM	COMM pin leakage current	V_COMM1 = 20 V, V_COMM2 = 20 V				1	µA
CLAMP PIN
R_DS-ON(CLAMP)	CLAMP1 and CLAMP2				0.75		Ω
ADAPTER ENABLE
V_AD-Pres	V_AD Rising threshold voltage. EN-UVLO	V_AD 0 V → 5 V		3.5	3.6	3.8	V
V_AD-PresH	V_AD-Pres hysteresis, EN-HYS	V_AD 5 V → 0 V			400		mV
I_AD	Input leakage current	V_RECT = 0 V, V_AD = 5 V				60	µA
R_AD	Pullup resistance from AD-EN to BAT when adapter mode is disabled and VBAT > VAD, EN-OUT	V_AD = 0 V, V_BAT = 5 V			200	350	Ω
V_AD-Diff	Voltage difference between V_AD and V_AD-EN when adapter mode is enabled, EN-ON	V_AD = 5 V, 0°C ≤ T_J ≤ 85°C		3	4.5	5	V
SYNCHRONOUS RECTIFIER
I_BAT-SR	I_BAT at which the synchronous rectifier enters half synchronous mode, SYNC_EN	I_BAT 200 mA → 0 mA	bq51050B, bq51051B	80	115	140	mA
I_BAT-SR		I_BAT 200 mA → 0 mA	bq51052B	20	50	65
I_BAT-SRH	Hysteresis for I_BAT,SR (full-synchronous mode enabled)	I_BAT 0 mA → 200 mA	bq51050B, bq51051B		25
I_BAT-SRH	Hysteresis for I_BAT,SR (full-synchronous mode enabled)	I_BAT 0 mA → 200 mA	bq51052B		28
V_HS-DIODE	High-side diode drop when the rectifier is in half synchronous mode	I_AC-VRECT = 250 mA, and T_J = 25°C			0.7		V
EN2
V_IL	Input low threshold for EN2					0.4	V
V_IH	Input high threshold for EN2			1.3			V
R_{PD, EN}	EN2 pulldown resistance				200		kΩ
ADC
P_owerREC	Received power measurement	0 W – 5 W received power after calibration of Rx magnetics losses			0.25		W