米6体育平台手机版

ZHCSJJ0C August 2000 – March 2024 BUF634

PRODUCTION DATA

6.6 Electrical Characteristics: Wide-Bandwidth Mode for SOIC Package

at T_A = 25°C, V_S = ±15 V, BW pin connected to V–, and R_L = 100 Ω connected to mid-supply (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
AC PERFORMANCE
BW	Bandwidth, –3 dB	R_L= 1 kΩ		210		MHz
BW	Bandwidth, –3 dB	R_L= 100 Ω		200		MHz
	Bandwidth for 0.1-dB flatness	V_O = 10 mV_PP, R_L= 100 Ω, R_S = 50 Ω		50		MHz
SR	Slew rate	V_O= 20-V step, V_IN-SR = 4000 V/µs		3750		V/µs
	Rise and fall time	V_O = 200-mV step		1.3		ns
	Settling time to 0.1%	V_O = 20-V step, V_IN-SR = 2500 V/µs		90		ns
	Settling time to 1%	V_O = 20-V step, V_IN-SR = 2500 V/µs		20		ns
e_n	Voltage noise	f = 1 kHz		3.4		nV/√Hz
i_n	Current noise	f = 100 kHz		0.85		pA/√Hz
HD2	2nd-harmonic distortion	V_O = 2 V_PP, f = 20 kHz		–77		dBc
HD2	2nd-harmonic distortion	V_O = 10 V_PP, f = 20 kHz		–69		dBc
HD3	3rd-harmonic distortion	V_O = 2 V_PP, f = 20 kHz		–77		dBc
HD3	3rd-harmonic distortion	V_O = 10 V_PP, f = 20 kHz		–56		dBc
DC PERFORMANCE
V_OS	Input offset voltage	T_A = 25℃		36	65	mV
	Input offset voltage drift⁽¹⁾	T_A = –40℃ to 125℃		175		µV/℃
I_B	Input bias current	V_IN= 0 V		0.25	2	µA
G	Gain	V_O= ±10 V, R_L= 1 kΩ	0.95	0.99		V/V
		V_O= ±10 V, R_L= 100 Ω	0.93	0.95
		V_O= ±10 V, R_L= 67 Ω	0.91	0.93
INPUT
	Linear input voltage range	R_L = 1 kΩ, I_B < 10 µA	–13		13	V
Z_IN	Input impedance	R_L= 100 Ω		180 \|\| 5		MΩ \|\| pF
OUTPUT
	Output headroom to supplies	I_O= ±10 mA		1.6	1.8	V
		I_O= ±100 mA		2.0	2.2
		I_O= ±150 mA		2.2	2.5
I_O	Current output, continuous			±250		mA
I_SC	Short-circuit current			±375	±550	mA
Z_O	Output impedance	DC, I_O= 10 mA		5		Ω
POWER SUPPLY
V_S	Operating voltage range		±2.25		±18	V
I_Q	Quiescent current	I_O= 0 mA		8.5	12	mA
PSRR	Power-supply rejection ratio	V_S= ±2.25 V to ±18 V	64	75		dB
THERMAL SHUTDOWN
	Thermal shutdown temperature			180		℃

(1) Based on electrical characterization over temperature of 35 devices.