ZHCSQ71 March 2022 CC1311P3
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
The up to 352-KB nonvolatile (Flash) memory provides storage for code and data. The flash memory is in-system programmable and erasable. The last flash memory sector must contain a Customer Configuration section (CCFG) that is used by boot ROM and TI provided drivers to configure the device. This configuration is done through the ccfg.c source file that is included in all TI provided examples.
The ultra-low leakage system static RAM (SRAM) is a single 32-KB block and can be used for both storage of data and execution of code. Retention of SRAM contents in Standby power mode is enabled by default and included in Standby mode power consumption numbers.
To improve code execution speed and lower power when executing code from nonvolatile memory, a 4-way nonassociative 8-KB cache is enabled by default to cache and prefetch instructions read by the system CPU. The cache can be used as a general-purpose RAM by enabling this feature in the Customer Configuration Area (CCFG).
The ROM contains a serial (SPI and UART) bootloader that can be used for initial programming of the device.