ZHCSQ71 March   2022 CC1311P3

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 Timing and Switching Characteristics
      1. 8.17.1 Reset Timing
      2. 8.17.2 Wakeup Timing
      3. 8.17.3 Clock Specifications
        1. 8.17.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.17.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.17.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.17.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.17.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.17.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       38
      5. 8.17.5 UART
        1. 8.17.5.1 UART Characteristics
    18. 8.18 Peripheral Characteristics
      1. 8.18.1 ADC
        1. 8.18.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.18.2 DAC
        1. 8.18.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.18.3 Temperature and Battery Monitor
        1. 8.18.3.1 Temperature Sensor
        2. 8.18.3.2 Battery Monitor
      4. 8.18.4 Comparator
        1. 8.18.4.1 Continuous Time Comparator
      5. 8.18.5 GPIO
        1. 8.18.5.1 GPIO DC Characteristics
    19. 8.19 Typical Characteristics
      1. 8.19.1 MCU Current
      2. 8.19.2 RX Current
      3. 8.19.3 TX Current
      4. 8.19.4 RX Performance
      5. 8.19.5 TX Performance
      6. 8.19.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.17.2 Wakeup Timing

Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not include software overhead.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MCU, Reset to Active(1) 850 - 4000 µs
MCU, Shutdown to Active(1) 850 - 4000 µs
MCU, Standby to Active 160 µs
MCU, Active to Standby 36 µs
MCU, Idle to Active 14 µs
(1) The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has been in Reset or Shutdown before starting up again. The wake up time increases with a higher capacitor value.
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