ZHCSPE3A May   2021  – November 2021 CC1312R7

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1. 3.1 功能方框图
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Terminal Configuration and Functions
    1. 6.1 Pin Diagram – RGZ Package (Top View)
    2. 6.2 Signal Descriptions – RGZ Package
    3. 6.3 Connections for Unused Pins and Modules
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Power Supply and Modules
    5. 7.5  Power Consumption - Power Modes
    6. 7.6  Power Consumption - Radio Modes
    7. 7.7  Nonvolatile (Flash) Memory Characteristics
    8. 7.8  Thermal Resistance Characteristics
    9. 7.9  RF Frequency Bands
    10. 7.10 861 MHz to 1054 MHz - Receive (RX)
    11. 7.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 7.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 7.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 7.14 Timing and Switching Characteristics
      1. 7.14.1 Reset Timing
      2. 7.14.2 Wakeup Timing
      3. 7.14.3 Clock Specifications
        1. 7.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 7.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 7.14.3.3 2 MHz RC Oscillator (RCOSC_MF)
        4. 7.14.3.4 32.768 kHz Crystal Oscillator (XOSC_LF)
        5. 7.14.3.5 32 kHz RC Oscillator (RCOSC_LF)
      4. 7.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 7.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       36
      5. 7.14.5 UART
        1. 7.14.5.1 UART Characteristics
    15. 7.15 Peripheral Characteristics
      1. 7.15.1 ADC
        1. 7.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 7.15.2 DAC
        1. 7.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 7.15.3 Temperature and Battery Monitor
        1. 7.15.3.1 Temperature Sensor
        2. 7.15.3.2 Battery Monitor
      4. 7.15.4 Comparators
        1. 7.15.4.1 Low-Power Clocked Comparator
        2. 7.15.4.2 Continuous Time Comparator
      5. 7.15.5 Current Source
        1. 7.15.5.1 Programmable Current Source
      6. 7.15.6 GPIO
        1. 7.15.6.1 GPIO DC Characteristics
    16. 7.16 Typical Characteristics
      1. 7.16.1 MCU Current
      2. 7.16.2 RX Current
      3. 7.16.3 TX Current
      4. 7.16.4 RX Performance
      5. 7.16.5 TX Performance
      6. 7.16.6 ADC Performance
  8. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Proprietary Radio Formats
    4. 8.4  Memory
    5. 8.5  Sensor Controller
    6. 8.6  Cryptography
    7. 8.7  Timers
    8. 8.8  Serial Peripherals and I/O
    9. 8.9  Battery and Temperature Monitor
    10. 8.10 µDMA
    11. 8.11 Debug
    12. 8.12 Power Management
    13. 8.13 Clock Systems
    14. 8.14 Network Processor
  9. 9 Application, Implementation, and Layout
    1. 9.1 Reference Designs
    2. 9.2 Junction Temperature Calculation
  10. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
      1. 10.2.1 SimpleLink™ Microcontroller Platform
    3. 10.3 Documentation Support
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.14.2 Wakeup Timing

Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not include software overhead.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MCU, Reset to Active(1) 850 - 4000 µs
MCU, Shutdown to Active(1) 850 - 4000 µs
MCU, Standby to Active 165 µs
MCU, Active to Standby 39 µs
MCU, Idle to Active 15 µs
(1) The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has been in Reset or Shutdown before starting up again. The wake up time increases with a higher capacitor value.
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