Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not include any software overhead (unless otherwise noted).
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
MCU, Reset/Shutdown to Active(1) |
GLDO default charge current setting, VDDR capacitor fully charged (2) |
|
350-450 |
|
µs |
MCU, Standby to Active |
MCU, Standby to Active (ready to execute code from flash). DCDC ON, default recharge current configuration |
|
33-43 (3) |
|
µs |
MCU, Standby to Active |
MCU, Standby to Active (ready to execute code from flash). GLDO ON, default recharge current configuration |
|
33-50 (3) |
|
µs |
MCU, Idle to Active |
Flash enabled in idle mode |
|
3 |
|
µs |
MCU, Idle to Active |
Flash disabled in idle mode |
|
14 |
|
µs |
(1) Wakeup time includes device ROM bootcode execution time. The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has been in Reset or Shutdown before starting up again.
(2) This is the best case reset/shutdown to active time (including ROM bootcode operation), for the specified GLDO charge current setting considering the VDDR capacitor is fully charged and is not discharged during the reset and shutdown events; that is, when the device is in reset / shutdown modes for only a very short period of time
(3) Depending on VDDR capacitor voltage level.