Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
|
PARAMETER |
MIN |
TYP |
MAX |
UNIT |
|
Crystal frequency |
|
48 |
|
MHz |
| ESR |
Equivalent series resistance
6 pF < CL ≤ 9 pF |
|
20 |
60 |
Ω |
| ESR |
Equivalent series resistance
5 pF < CL ≤ 6 pF |
|
|
80 |
Ω |
| LM |
Motional inductance, relates to the load capacitance that is used for the crystal (CL in Farads)(5) |
|
< 3 × 10–25 / CL2 |
|
H |
| CL |
Crystal load capacitance(4) |
5 |
7(3) |
9 |
pF |
|
Start-up time(2) |
|
200 |
|
µs |
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used.
(3) On-chip default connected capacitance including reference design parasitic capacitance. Connected internal capacitance is changed through software in the Customer Configuration section (CCFG).
(4) Adjustable load capacitance is integrated into the device. External load capacitors are required for systems targeting compliance with certain regulations. See the device errata for further details.
(5) The crystal manufacturer's specification must satisfy this requirement for proper operation.