ZHCSKG5C October   2019  – April 2024 CC2652P

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 功能方框图
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagram—RGZ Package (Top View)
    2. 6.2 Signal Descriptions—RGZ Package
    3. 6.3 Connections for Unused Pins and Modules
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Power Supply and Modules
    5. 7.5  Power Consumption—Power Modes
    6. 7.6  Power Consumption—Radio Modes
    7. 7.7  Nonvolatile (Flash) Memory Characteristics
    8. 7.8  Thermal Resistance Characteristics
    9. 7.9  RF Frequency Bands
    10. 7.10 Bluetooth Low Energy—Receive (RX)
    11. 7.11 Bluetooth Low Energy—Transmit (TX)
    12. 7.12 Zigbee and Thread—IEEE 802.15.4-2006 2.4GHz (OQPSK DSSS1:8, 250kbps): RX
    13. 7.13 Zigbee and Thread—IEEE 802.15.4-2006 2.4GHz (OQPSK DSSS1:8, 250kbps): TX
    14. 7.14 Timing and Switching Characteristics
      1. 7.14.1 Reset Timing
      2. 7.14.2 Wakeup Timing
      3. 7.14.3 Clock Specifications
        1. 7.14.3.1 48MHz Crystal Oscillator (XOSC_HF)
        2. 7.14.3.2 48MHz RC Oscillator (RCOSC_HF)
        3. 7.14.3.3 2MHz RC Oscillator (RCOSC_MF)
        4. 7.14.3.4 32.768kHz Crystal Oscillator (XOSC_LF)
        5. 7.14.3.5 32kHz RC Oscillator (RCOSC_LF)
      4. 7.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 7.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       36
      5. 7.14.5 UART
        1. 7.14.5.1 UART Characteristics
    15. 7.15 Peripheral Characteristics
      1. 7.15.1 ADC
        1. 7.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 7.15.2 DAC
        1. 7.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 7.15.3 Temperature and Battery Monitor
        1. 7.15.3.1 Temperature Sensor
        2. 7.15.3.2 Battery Monitor
      4. 7.15.4 Comparators
        1. 7.15.4.1 Low-Power Clocked Comparator
        2. 7.15.4.2 Continuous Time Comparator
      5. 7.15.5 Current Source
        1. 7.15.5.1 Programmable Current Source
      6. 7.15.6 GPIO
        1. 7.15.6.1 GPIO DC Characteristics
    16. 7.16 Typical Characteristics
      1. 7.16.1 MCU Current
      2. 7.16.2 RX Current
      3. 7.16.3 TX Current
      4. 7.16.4 RX Performance
      5. 7.16.5 TX Performance
      6. 7.16.6 ADC Performance
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Bluetooth 5.2 Low Energy
      2. 8.3.2 802.15.4 (Thread, Zigbee, 6LoWPAN)
    4. 8.4  Memory
    5. 8.5  Sensor Controller
    6. 8.6  Cryptography
    7. 8.7  Timers
    8. 8.8  Serial Peripherals and I/O
    9. 8.9  Battery and Temperature Monitor
    10. 8.10 µDMA
    11. 8.11 Debug
    12. 8.12 Power Management
    13. 8.13 Clock Systems
    14. 8.14 Network Processor
  10. 9 Application, Implementation, and Layout
    1. 9.1 Reference Designs
  11. 10Device and Documentation Support
    1. 10.1 Tools and Software
      1. 10.1.1 SimpleLink™ Microcontroller Platform
    2. 10.2 Documentation Support
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Nonvolatile (Flash) Memory Characteristics

Over operating free-air temperature range and VDDS = 3.0V (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Flash sector size8KB
Supported flash erase cycles before failure, full bank(1)(5)30k Cycles
Supported flash erase cycles before failure, single sector(2)60k Cycles
Maximum number of write operations per row before sector erase(3)83Write Operations
Flash retention85°C11.4Years at 85°C
Flash sector erase currentAverage delta current10.7mA
Flash sector erase time(4)Zero cycles 10ms
Flash write currentAverage delta current, 4 bytes at a time6.2mA
Flash write time(4)4 bytes at a time21.6µs
(1) A full bank erase is counted as a single erase cycle on each sector
(2) Up to four customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles
(3) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached.
(4) This number is dependent on Flash aging and increases over time and erase cycles
(5) Aborting flash during erase or program modes is not a safe operation.
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