2 修订历史记录
Changes from September 6, 2013 to September 17, 2018
- 已通篇更改格式和结构,其中包括添加章节编号Go
- 添加了器件信息 表Go
- 添加了Section 1.4并将所有功能框图移到这里Go
- Added Section 3, Device Comparison, and moved Table 3-1 to itGo
- Added Section 3.1, Related ProductsGo
- Added Section 4, Terminal Configuration and Functions, and moved all pinouts and terminal functions tables to itGo
- Added typical conditions statements at the beginning of Section 5, SpecificationsGo
- Added Section 5, Specifications, and moved all electrical and timing specifications to itGo
- Added Section 5.2, ESD RatingsGo
- Changed the MIN value of the V(DVCC_BOR_hys) parameter from 60 mV to 50 mV in Section 5.19, PMM, Brownout Reset (BOR)Go
- Updated notes (1) and (2) and added note (3) in Section 5.25,Wake-up Times From Low-Power Modes and ResetGo
- Removed ADC12DIV from the formula for the TYP value in the second row of the tCONVERT parameter in Section 5.36, 12-Bit ADC, Timing Parameters (removed because ADC12CLK is after division)Go
- For the tEN_CMP parameter in Section 5.42, Comparator_B: Removed "CBPWRMD = 10" from the Test Conditions in the first row; added second row with Test Conditions of "CBPWRMD = 10" and a MAX value of 100 µsGo
- Changed the test conditions "RF crystal oscillator only" and added note in Section 5.45.3, Current Consumption, Reduced-Power ModesGo
- Corrected the link for DN013 Programming Output Power on CC1101Go
- Corrected spelling of NMIIFG in Table 6-8, System Module Interrupt Vector RegistersGo
- 增加了Section 8器件和文档支持 并将器件命名规则、ESD 注意事项 和商标 部分移到这里Go
- 增加了Section 9,机械,封装和可订购信息Go