米6体育平台手机版

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.5 Switching Characteristics⁽²⁾

PARAMETER		TEST CONDITIONS	V_CC (V)	25°C			-40°C to 85°C		-55°C to 125°C		UNIT
PARAMETER		TEST CONDITIONS	V_CC (V)	MIN	TYP	MAX	MIN	MAX	MIN	MAX	UNIT
HC TYPES
t_pd	Address to output	C_L = 50pF	2			150		190		225	ns
		C_L = 50pF	4.5		13^⁽³⁾	30		38		45
		C_L = 50pF	6			26		33		38
	Strobe G₀, G₁, G₂ to output HC/HCT 138	C_L = 50pF	2			150		190		265	ns
			4.5			30		38		53
			6			26		33		45
t_t	Output transition time	C_L = 50pF	2			75		95		110	MHz
			4.5			15		19		22
			6			13		16		19
C_pd	Power dissipation capacitance⁽¹⁾	C_L = 15pF	5		67						pF
C_i	Input capacitance					10		10		10	pF
HCT TYPES
t_pd	Address to output	C_L = 50pF	4.5		14^⁽³⁾	35		44		53	ns
	Strobe G₂ to output HC/HCT138	C_L = 50pF	4.5			35		44		53	ns
	Strobe G₀, G₁ to output HC/HCT238	C_L = 15pF	4.5			40		50		60	ns
t_t	Output transition time	C_L= 15pF	4.5			15		19		22
C_pd	Power dissipation capacitance⁽¹⁾	C_L = 15pF	5		67						pF
C_i	Input capacitance					10		10		10	pF

(1) C_PD is used to determine the dynamic power consumption, per gate.

(2) For details on power calculation, see SCAA035B

(3) C_L = 15pF and V_CC = 5